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Intshayelelo kwisizukulwana sesithathu semiconductor GaN kunye neteknoloji ye-epitaxial ehambelanayo
1. Ii-semiconductors zesizukulwana sesithathu I-teknoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizinto ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto eziphathekayo zokuphuhliswa kwee-transistors kunye neteknoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zibeka i...Funda ngokugqithisileyo -
Uphononongo lwamanani lokulinganisa kwisiphumo segraphite eneporous ekukhuleni kwecrystal carbide crystal
Inkqubo esisiseko yokukhula kwe-crystal ye-SiC ihlukaniswe ibe yi-sublimation kunye nokubola kwezinto ezibonakalayo kwiqondo lokushisa eliphezulu, ukuthuthwa kwezinto zesigaba segesi phantsi kwesenzo se-gradient yeqondo lokushisa, kunye nokukhula kwakhona kwezinto zesigaba segesi kwi-crystal yembewu. Ngokusekelwe koku, i...Funda ngokugqithisileyo -
Iintlobo zeGrafite ekhethekileyo
Igraphite ekhethekileyo bubunyulu obuphezulu, ingxinano ephezulu kunye namandla aphezulu egraphite kwaye inokumelana nokugqwesa okugqwesileyo, uzinzo oluphezulu lobushushu kunye nokuhamba kombane okukhulu. Yenziwe ngegraphite yendalo okanye eyenziweyo emva konyango lobushushu obuphezulu kunye noxinzelelo oluphezulu...Funda ngokugqithisileyo -
Uhlalutyo lwezixhobo zokubeka ifilimu ezibhityileyo - imigaqo kunye nokusetyenziswa kwezixhobo ze-PECVD/LPCVD/ALD
Ukubekwa kwefilim ebhityileyo kukugquma umaleko wefilimu kwizinto ezingundoqo ze-semiconductor. Le filimu inokwenziwa ngezinto ezahlukeneyo, ezifana ne-silicon dioxide, i-semiconductor ye-polysilicon, i-metal copper, njl.Funda ngokugqithisileyo -
Izinto ezibalulekileyo ezibonisa umgangatho wokukhula kwe-silicon ye-monocrystalline - intsimi ye-thermal
Inkqubo yokukhula ye-silicon ye-monocrystalline iqhutywe ngokupheleleyo kwintsimi ye-thermal. Intsimi efanelekileyo ye-thermal inceda ekuphuculeni umgangatho weekristali kwaye inokusebenza okuphezulu kwe-crystallization. Uyilo lommandla we-thermal lumisela ubukhulu becala utshintsho kwiqondo lobushushu...Funda ngokugqithisileyo -
Bubuphi ubunzima bobugcisa be-silicon carbide crystal ukukhula eziko?
Iziko lokukhula kwekristale sesona sixhobo siphambili sokukhula kwekristale ye-silicon carbide. Iyafana neziko lokukhula kwekristale lesilicon yenqanaba lekristale. Isakhiwo sesithando somlilo asinzima kakhulu. Ikakhulu yenziwe ngumzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokuhambisa ikhoyili...Funda ngokugqithisileyo -
Ziziphi iziphene ze-silicon carbide epitaxial layer
Itekhnoloji engundoqo yokukhula kwezixhobo ze-SiC epitaxial kuqala itekhnoloji yokulawula isiphene, ngakumbi kwitekhnoloji yokulawula isiphene ethanda ukusilela kwesixhobo okanye ukuthotywa kokuthembeka. Uphononongo lwendlela yeziphene zesubstrate ezidlulela kwi-epi...Funda ngokugqithisileyo -
Ukukhula okuziinkozo okune-oxidized kunye neteknoloji yokukhula kwe-epitaxial-Ⅱ
3. I-Epitaxial yokukhula kwefilimu encinci I-substrate ibonelela ngenkxaso yomzimba okanye i-conductive layer yezixhobo zamandla ze-Ga2O3. Uluhlu olulandelayo olubalulekileyo luluhlu lwesiteshi okanye i-epitaxial layer esetyenziselwa ukuxhathisa i-voltage kunye nokuthuthwa komthwali. Ukuze kwandiswe amandla ombane kunye nokunciphisa i-conduc...Funda ngokugqithisileyo -
I-Gallium oxide ikristale enye kunye neteknoloji yokukhula kwe-epitaxial
I-Wide bandgap (WBG) semiconductors emelwe yi-silicon carbide (SiC) kunye ne-gallium nitride (GaN) ifumene ingqwalasela ebanzi. Abantu banolindelo oluphezulu kwizicelo ezilindelekileyo ze-silicon carbide kwizithuthi zombane kunye neegridi zamandla, kunye nethemba lesicelo se-gallium...Funda ngokugqithisileyo
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