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Ukusetyenziswa kwe-silicon carbide ceramics kwintsimi ye-semiconductor
ngu admin on 24-10-10
Izinto ezikhethiweyo zeendawo ezichanekileyo zoomatshini befotolithography Kwintsimi ye-semiconductor, izixhobo ze-silicon carbide ceramic zisetyenziswa ikakhulu kwizixhobo eziphambili zokwenziwa kwesekethe edibeneyo, njenge-silicon carbide worktable, iileyili zesikhokelo, izibonisi, i-ceramic suction chuck, iingalo, i...
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0Ziziphi iinkqubo ezintandathu zesithando somlilo sekristale esinye
ngu admin on 24-09-23
Isithando somlilo se-crystal esisodwa sisixhobo esisebenzisa i-heater ye-graphite ukunyibilikisa izinto ze-silicon ze-polycrystalline kwindawo yegesi ye-inert (i-argon) kwaye isebenzisa indlela ye-Czochralski yokukhulisa i-crystals enye engachithwanga. Ukakhulu iqulunqwe ngezi nkqubo zilandelayo: oomatshini...
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Kutheni sifuna igraphite kwintsimi ye-thermal yesithando somlilo sekristale enye
ngu admin on 24-09-23
Inkqubo yokufudumala yesithando somlilo sekristale esithe nkqo ikwabizwa ngokuba yintsimi ye-thermal. Umsebenzi we-graphite thermal field system ubhekisa kuyo yonke inkqubo yokunyibilikisa izinto zesilicon kunye nokugcina ukukhula kwekristale enye kwiqondo lobushushu elithile. Ngamafutshane, yigrap epheleleyo ...
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Iindidi ezininzi zeenkqubo zokusika i-wafer semiconductor yamandla
ngu admin on 24-09-20
Ukusika i-Wafer yenye yekhonkco ebalulekileyo kwimveliso ye-semiconductor yamandla. Eli nyathelo lenzelwe ukwahlula ngokuchanekileyo iisekethe ezidityanisiweyo zomntu ngamnye okanye iitshiphusi ezivela kwi-semiconductor wafers. Isitshixo sokusika i-wafer kukukwazi ukwahlula iitshiphusi zomntu ngamnye ngelixa uqinisekisa ukuba ulwakhiwo oluthambileyo...
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Inkqubo yeBCD
ngu admin on 24-09-18
Yintoni inkqubo yeBCD? Inkqubo ye-BCD yinkqubo yeteknoloji yenkqubo edibeneyo ye-single-chip yokuqala eyaziswa yi-ST ngo-1986. Le teknoloji inokwenza izixhobo ze-bipolar, i-CMOS kunye ne-DMOS kwi-chip efanayo. Ukubonakala kwayo kunciphisa kakhulu indawo ye-chip. Kunokuthiwa inkqubo ye-BCD isebenzisa ngokupheleleyo ...
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I-BJT, i-CMOS, i-DMOS kunye nezinye iitekhnoloji zenkqubo ye-semiconductor
ngu admin on 24-09-10
Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana. Iwebhusayithi yethu: https://www.vet-china.com/ Njengoko iinkqubo zokwenziwa kwe-semiconductor ziqhubeka nokwenza impumelelo, ingxelo edumileyo ebizwa ngokuba "nguMthetho kaMoore" ibijikeleza kwishishini. Kwaku p...
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Inkqubo yokwenziwa kweepateni zeSemiconductor ukuhamba-etching
ngu admin on 24-09-10
Ukuthungwa okumanzi kwangaphambili kwakhuthaza ukuphuhliswa kweenkqubo zokucoca okanye uthuthu. Namhlanje, i-etching eyomileyo usebenzisa i-plasma ibe yinkqubo yokubhala eqhelekileyo. I-Plasma iqulethe ii-electron, ii-cations kunye neeradicals. Amandla asetyenziswa kwiplasma abangela ezona electron zingaphandle...
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Uphando kwi-8-intshi yeSiC epitaxial furnace kunye nenkqubo ye-homoepitaxial-Ⅱ
ngu admin on 24-09-04
2 Iziphumo zovavanyo kunye nengxoxo 2.1 Ubukhulu be-Epitaxial layer kunye nokufana kwe-Epitaxial layer thick, i-doping concentration kunye nokufana enye yezalathi ezingundoqo zokugweba umgangatho we-epitaxial wafers. Ubukhulu obulawulekayo ngokuchanekileyo, i-doping co ...
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Uphando kwi-8-intshi yeSiC epitaxial furnace kunye nenkqubo ye-homoepitaxial-Ⅰ
ngu admin on 24-09-04
Okwangoku, ishishini leSiC liyaguquka ukusuka kwi-150 mm (6 intshi) ukuya kwi-200 mm (8 intshi). Ukuze kuhlangatyezwane nemfuno engxamisekileyo yobukhulu obukhulu, obuphezulu beSiC homoepitaxial wafers kushishino, 150mm kunye 200mm 4H-SiC homoepitaxial wafers zalungiswa ngempumelelo kwi...
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