Inkqubo yeBCD

Yintoni inkqubo yeBCD?

Inkqubo ye-BCD yinkqubo yeteknoloji yenkqubo edibeneyo ye-single-chip yokuqala eyaziswa yi-ST ngo-1986. Le teknoloji inokwenza izixhobo ze-bipolar, i-CMOS kunye ne-DMOS kwi-chip efanayo. Ukubonakala kwayo kunciphisa kakhulu indawo ye-chip.

Kunokuthiwa inkqubo ye-BCD isebenzisa ngokupheleleyo iingenelo zokukwazi ukuqhuba i-Bipolar, ukuhlanganiswa okuphezulu kwe-CMOS kunye nokusetyenziswa kwamandla aphantsi, kunye ne-DMOS yombane ophezulu kunye nomthamo ophezulu wokuhamba ngoku. Phakathi kwabo, i-DMOS isitshixo sokuphucula amandla kunye nokudibanisa. Ngophuhliso olongezelelweyo lwethekhnoloji yesekethe edibeneyo, inkqubo ye-BCD iye yaba yeyona teknoloji yokuvelisa ye-PMIC.

Inkqubo ye-BCD ye-cross-sectional diagram, inethiwekhi yomthombo, enkosi

Izinto eziluncedo kwinkqubo yeBCD

Inkqubo ye-BCD yenza izixhobo ze-Bipolar, izixhobo ze-CMOS, kunye nezixhobo zamandla ze-DMOS kwi-chip efanayo ngaxeshanye, ukudibanisa ukuhanjiswa okuphezulu kunye nomthwalo onamandla wokuqhuba izixhobo ze-bipolar kunye nokudityaniswa okuphezulu kunye nokusetyenziswa kwamandla aphantsi kwe-CMOS, ukuze bakwazi ukuncedisana. omnye nomnye kwaye badlale ngokupheleleyo kwiinzuzo zabo; kwangaxeshanye, i-DMOS inokusebenza kwimowudi yokutshintsha ngokusetyenziswa kwamandla aphantsi kakhulu. Ngamafutshane, ukusetyenziswa kwamandla aphantsi, ukusebenza kakuhle kwamandla kunye nokudibanisa okuphezulu yenye yezona zinto zilungileyo zeBCD. Inkqubo ye-BCD inokunciphisa kakhulu ukusetyenziswa kwamandla, ukuphucula ukusebenza kwenkqubo kunye nokuthembeka okungcono. Imisebenzi yeemveliso ze-elektroniki iyanda imihla ngemihla, kwaye iimfuno zokutshintsha kwamandla ombane, ukukhuselwa kwe-capacitor kunye nokwandiswa kobomi bebhetri ziya zibaluleke kakhulu. Iimpawu ze-BCD ezikhawulezayo kunye nezonga amandla zihlangabezana neemfuno zenkqubo yokusebenza okuphezulu kwe-analog / chips zolawulo lwamandla.

Iiteknoloji eziphambili zenkqubo yeBCD

Izixhobo eziqhelekileyo zenkqubo ye-BCD ziquka i-CMOS ene-voltage ephantsi, iityhubhu ze-MOS eziphezulu ze-voltage, i-LDMOS enee-voltages ezahlukeneyo zokuqhawula, i-NPN/PNP ethe nkqo kunye ne-Schottky diode, njl. izixhobo kwinkqubo ye-BCD. Ngoko ke, ngaphezu kokuqwalasela ukuhambelana kwezixhobo eziphezulu ze-voltage kunye nezixhobo eziphantsi kwe-voltage, iinkqubo zokucofa kabini kunye neenkqubo zeCMOS, njl.

Kwitekhnoloji ye-BCD yodwa, iitekhnoloji ezininzi ezinje ngokuhlukaniswa kwe-junction, ukuzimela yedwa kunye ne-dielectric isolation ziye zavela emva kwenye. Itekhnoloji ye-Junction isolation kukwenza isixhobo kwi-N-type epitaxial layer ye-P-type substrate kwaye isebenzise iimpawu ze-reverse bias ze-PN junction ukuphumeza ukuzimela, kuba i-PN junction inobuxhakaxhaka obuphezulu kakhulu phantsi kwe-bis reverse.

Itekhnoloji yokuzimela yodwa ngokuyimfuneko i-PN junction isolation, exhomekeke kwiimpawu zendalo ze-PN phakathi komthombo kunye nemimandla yokukhupha i-device kunye ne-substrate ukuphumeza ukuzimela. Xa ityhubhu ye-MOS ivuliwe, ummandla womthombo, ummandla we-drain kunye nomjelo ujikelezwe ngummandla wokunciphisa, ukwenza ukuhlukaniswa kwi-substrate. Xa ivaliwe, i-PN junction phakathi kommandla we-drain kunye ne-substrate i-reverse biased, kwaye i-voltage ephezulu yommandla womthombo ihlukaniswe ngummandla wokunciphisa.

I-Dielectric isolation isebenzisa i-insulating media efana ne-silicon oxide ukufezekisa ukuzimela. Ngokusekelwe kwi-dielectric isolation kunye ne-junction isolation, i-quasi-dielectric isolation iye yaphuhliswa ngokudibanisa izibonelelo zombini. Ngokukhetha ngokukhetha itekhnoloji yokwahlukanisa engasentla, ukuhambelana okuphezulu kwe-voltage kunye ne-low-voltage kunokufezekiswa.

Isikhokelo sophuhliso lwenkqubo yeBCD

Ukuphuhliswa kweteknoloji yenkqubo ye-BCD akufani nenkqubo ye-CMOS eqhelekileyo, ehlala ilandela umthetho we-Moore ukuphuhlisa kwicala lobubanzi bomgca omncinci kunye nesantya esikhawulezayo. Inkqubo ye-BCD yahlulwe ngokulinganayo kwaye iphuhliswe kumacala amathathu: amandla ombane aphezulu, amandla aphezulu, kunye noxinzelelo oluphezulu.

1. Ulwalathiso lwe-BCD oluphezulu lwe-voltage

I-BCD ene-voltage ephezulu inokuvelisa i-high-reliability low-voltage control circuits kunye ne-ultra-high-voltage DMOS-level circuits kwi-chip efanayo ngexesha elifanayo, kwaye inokuqonda ukuveliswa kwezixhobo eziphezulu ze-500-700V. Nangona kunjalo, ngokubanzi, i-BCD isafanelekile kwiimveliso ezineemfuno eziphezulu kakhulu zezixhobo zamandla, ngakumbi i-BJT okanye izixhobo ze-DMOS zangoku, kwaye ingasetyenziselwa ukulawula umbane ekukhanyeni kwe-elektroniki kunye nezicelo zoshishino.

Ubuchwephesha bangoku bokwenza i-BCD enevoltage ephezulu bubuchwephesha be-RESURF obucetywe ngu-Appel et al. ngo 1979. Isixhobo senziwe kusetyenziswa umaleko we-epitaxial lightly doped doped doped lightly doped epitaxial layer to make surface electric field distribution flatter, ngaloo ndlela kuphuculwe iimpawu zokuqhekeka komphezulu, ukwenzela ukuba ukuphuka kwenzeka emzimbeni endaweni yomphezulu, ngaloo ndlela kwandisa amandla ombane wesixhobo. I-doping yokukhanya yenye indlela yokunyusa amandla ombane ophukileyo we-BCD. Isebenzisa ubukhulu becala idreyini ephindwe kabini i-DDD (iDoping Drain ephindwe kabini) kunye ne-drain edope kancinci i-LDD (iDoping Drain kancinane). Kwingingqi ye-DMOS yokukhupha, ummandla we-N-type drift wongezwa ukuze utshintshe uqhagamshelwano lwangaphambili phakathi kwe-N + i-drain kunye ne-P-type substrate kuqhagamshelwano phakathi kwe-N-drain kunye ne-P-type substrate, ngaloo ndlela ukwandisa umbane wokuphuka.

2. Ulwalathiso lweBCD olunamandla aphezulu

Uluhlu lwamandla ombane we-BCD yamandla aphezulu yi-40-90V, kwaye isetyenziswa kakhulu kwi-elektroniki yeemoto ezifuna amandla okuqhuba ngokuphezulu, amandla ombane aphakathi kunye neesekethe zokulawula ezilula. Iimpawu zayo zemfuno ngamandla aphezulu okuqhuba ngoku, amandla ombane aphakathi, kunye nesekethe yolawulo ihlala ilula.

3. Ulwalathiso lweBCD olunoxinano oluphezulu

I-BCD yoxinaniso oluphezulu, uluhlu lombane luyi-5-50V, kwaye ezinye ii-elektroniki zemoto ziya kufikelela kwi-70V. Imisebenzi eyongezelelekileyo kunye neyohlukileyo inokudityaniswa kwi-chip efanayo. Uxinaniso oluphezulu lwe-BCD lwamkela izimvo zoyilo lwemodyuli ukufezekisa ulwahlulo lwemveliso, olusetyenziswa ikakhulu kwizicelo zombane wemoto.

Izicelo eziphambili zenkqubo yeBCD

Inkqubo ye-BCD isetyenziswa ngokubanzi kulawulo lwamandla (amandla kunye nolawulo lwebhetri), i-drive drive, i-automotive electronics, i-industrial control, njl. I-chip yokulawula amandla (PMIC) yenye yeentlobo ezibalulekileyo ze-analog chips. Indibaniselwano yenkqubo ye-BCD kunye nobuchwepheshe be-SOI ikwayinto ephambili yophuhliso lwenkqubo ye-BCD.

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