Okokuqala, kufuneka saziI-PECVD(I-Plasma eyongezelelweyo kwi-Chemical Vapor Deposition). I-Plasma kukuqiniswa kwentshukumo ye-thermal yeemolekyuli zezinto. Ukudibana phakathi kwabo kuya kubangela ukuba iamolekyu zegesi zibe ionized, kwaye izinto eziphathekayo ziya kuba ngumxube we-ion ezihamba ngokukhululekileyo, i-electron kunye neengqungquthela ezingathathi hlangothi ezisebenzisanayo.
Kuqikelelwa ukuba izinga lokulahleka kokukhanya kwi-silicon surface liphezulu malunga ne-35%. Ifilimu ye-anti-reflection inokuphucula kakhulu izinga lokusetyenziswa kokukhanya kwelanga ngeseli yebhetri, enceda ukunyusa ukuxinwa kweefoto ze-photogenerated ngoku kwaye ngaloo ndlela kuphuculwe ukusebenza kakuhle kokuguqulwa. Kwangaxeshanye, ihydrogen ekwifilim idlula kumphezulu weseli yebhetri, icuthe izinga lokuhlangana kwakhona komphezulu we-emitter junction, inciphise umsinga obumnyama, yonyusa amandla ombane wesekethe evulekileyo, kwaye iphucule ukusebenza kakuhle kokuguqulwa kombane. Ubushushu obuphezulu be-annealing ngokukhawuleza kwinkqubo yokutshisa iphula ezinye iibhondi ze-Si-H kunye ne-NH, kwaye i-H ekhululiwe yomeleza ngakumbi ukugqithiswa kwebhetri.
Kuba imathiriyeli ye-silicon ye-photovoltaic-grade inesixa esikhulu sokungcola kunye neziphene, ubomi obuncinci bomntu ophetheyo kunye nobude be-silicon buncitshisiwe, okukhokelela ekunciphiseni kokuguqulwa kwebhetri. I-H inokusabela ngeziphene okanye ukungcola kwi-silicon, ngaloo ndlela idlulisela ibhendi yamandla kwi-bandgap kwibhendi ye-valence okanye ibhendi yokuqhuba.
1. Umgaqo we-PECVD
Inkqubo ye-PECVD luluhlu lweejeneretha ezisebenzisayoPECVD isikhephe segraphite kunye ne-high-frequency plasma exciters. Ijeneretha yeplasma ifakwe ngokuthe ngqo phakathi kweplate yokwambathisa ukuze iphendule phantsi koxinzelelo oluphantsi kunye nobushushu obuphakamileyo. Iigesi ezisebenzayo ezisetyenziswayo yi-silane SiH4 kunye ne-ammonia NH3. Ezi gesi zisebenza kwi-silicon nitride egcinwe kwi-silicon wafer. Izalathisi ezahlukeneyo zokuphinda zifumaneke zinokufumaneka ngokutshintsha umlinganiselo we-silane kwi-ammonia. Ngexesha lenkqubo yokubeka, isixa esikhulu seeathom ze-hydrogen kunye nee-ion ze-hydrogen ziveliswa, nto leyo eyenza ukuba i-hydrogen passivation ye-wafer ibe ntle kakhulu. Kwi-vacuum kunye neqondo lobushushu le-ambient elingama-480 degrees Celsius, umaleko we-SixNy uqatywe kumphezulu we-silicon wafer ngokuqhuba i-wafer.PECVD isikhephe segraphite.
3SiH4+4NH3 → Si3N4+12H2
2. Si3N4
Umbala wefilimu ye-Si3N4 utshintsha ngokutyeba kwayo. Ngokubanzi, ubukhulu obufanelekileyo buphakathi kwe-75 kunye ne-80 nm, ebonakala iluhlaza okwesibhakabhaka. Isalathisi se-refractive sefilimu ye-Si3N4 ingcono kakhulu phakathi kwe-2.0 kunye ne-2.5. Utywala ngokuqhelekileyo busetyenziselwa ukulinganisa isalathisi saso se-refractive.
Umphumo ogqwesileyo wokudlula umphezulu, ukusebenza kakuhle kwe-optical anti-reflection (ukutyeba kwe-refractive index matching), inkqubo yobushushu obuphantsi (ukunciphisa iindleko ngokufanelekileyo), kunye nee-ion ze-H ezenziweyo zidlula umphezulu we-silicon wafer.
3. Imiba eqhelekileyo kwiworkshop yokwaleka
Ubunzima befilimu:
Ixesha lokubeka lihlukile kwiindidi ezahlukeneyo zefilimu. Ixesha lokubeka kufuneka linyuswe ngokufanelekileyo okanye lincitshiswe ngokombala wengubo. Ukuba ifilimu imhlophe, ixesha lokubeka kufuneka lincitshiswe. Ukuba ibomvu, kufuneka inyuswe ngokufanelekileyo. Isikhephe ngasinye seefilimu kufuneka siqinisekiswe ngokupheleleyo, kwaye iimveliso ezineziphene azivumelekanga ukuba zingene kwinkqubo elandelayo. Umzekelo, ukuba i-coating ihlwempuzekile, njengamabala ombala kunye ne-watermark, eyona ndawo ixhaphakileyo yokumhlophe komphezulu, ukuhluka kombala, kunye namabala amhlophe kumgca wemveliso kufuneka kuchongwe ngexesha. Ubumhlophe bomphezulu bubangelwa ikakhulu yifilimu eshinyeneyo ye-silicon nitride, enokulungiswa ngokulungelelanisa ixesha lokubekwa kwefilimu; ifilimu yokwahlukana kombala ibangelwa ikakhulu kukuvalwa kwendlela yegesi, ukuvuza kwetyhubhu ye-quartz, ukungaphumeleli kwe-microwave, njl.; amabala amhlophe abangelwa ikakhulu ngamabala amancinci amnyama kwinkqubo yangaphambili. Ukubeka iliso kwi-reflectionivity, index refractive, njl., ukhuseleko lweegesi ezikhethekileyo, njl.
Amabala amhlophe kumphezulu:
I-PECVD yinkqubo ebaluleke kakhulu kwiiseli zelanga kunye nesalathisi esibalulekileyo sokusebenza kakuhle kweeseli zelanga zenkampani. Inkqubo ye-PECVD ixakeke ngokubanzi, kwaye ibhetshi nganye yeeseli ifuna ukujongwa. Zininzi iityhubhu zokugquma eziko, kwaye ityhubhu nganye inamakhulu eeseli (kuxhomekeke kwisixhobo). Emva kokutshintsha iiparamitha zenkqubo, umjikelo wokuqinisekisa ude. Itekhnoloji yokwambathisa itekhnoloji ethi yonke imboni ye-photovoltaic ibaluleke kakhulu. Ukusebenza kweeseli zelanga kunokuphuculwa ngokuphucula iteknoloji yokugqoka. Kwixesha elizayo, itekhnoloji yomphezulu weeseli zelanga inokuba yinkqubela kwithiyori esebenzayo yeeseli zelanga.
Ixesha lokuposa: Dec-23-2024