Yintoni i-sic coating? – I-VET ENERGY

Isilicon Carbideyikhompawundi enzima equlethe i-silicon kunye nekhabhoni, kwaye ifumaneka kwindalo njenge-mineral enqabileyo kakhulu i-moissanite. Iincinci ze-silicon ze-carbide zinokudibaniswa kunye ngokudibanisa ukwenza ii-ceramics ezinzima kakhulu, ezisetyenziswa ngokubanzi kwizicelo ezifuna ukuqina okuphezulu, ngakumbi kwi-procession semiconductor.

Ubume bomzimba beSiC

Yintoni iSiC Coating?

Ukwaleka kwe-SiC yi-silicon carbide eshinyeneyo, ekwaziyo ukumelana nokunxitywa kwe-corrosion ephezulu kunye nokumelana nobushushu kunye nokuhamba kakuhle kwe-thermal. Olu tyaba oluphezulu lwe-SiC lusetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-elektroniki ukukhusela abathwali be-wafer, iziseko kunye nezinto zokufudumeza kwiindawo ezinobungozi kunye nezisebenzayo. I-coating ye-SiC ikwafanelekile kwiziko lokufunxa kunye nokufudumeza isampulu kwi-vacuum ephezulu, indawo esebenzayo kunye ne-oxygen.

Ukucoceka okuphezulu komgangatho we-SiC wokugquma

Yintoni inkqubo yokugquma iSiC?

Umaleko omncinci we-silicon carbide ufakwe kumphezulu we-substrate usebenzisaI-CVD (Ukubekwa komphunga weChemical). I-Deposition idla ngokuqhutyelwa kumaqondo okushisa e-1200-1300 ° C kunye nokuziphatha kokwandisa i-thermal ye-substrate impahla kufuneka ihambelane ne-SiC yokugqoka ukunciphisa uxinzelelo lwe-thermal.

CVD SIC Coating FILM UKWAKHIWA KWEKHRISTU

Iimpawu ezibonakalayo ze-SiC coating zibonakaliswa ikakhulu ekuxhathiseni ubushushu obuphezulu, ukuqina, ukumelana nokugqwala kunye nokuhanjiswa kwe-thermal.

Ii parameters ezibonakalayo zihlala ngolu hlobo lulandelayo:

Ukuqina: I-coating ye-SiC ngokuqhelekileyo ine-Vickers Hardness kuluhlu lwe-2000-2500 HV, olubanika ukunxiba okuphezulu kakhulu kunye nokuchasana kwempembelelo kwizicelo zoshishino.

Ukuxinana: Iingubo zeSiC zihlala zinoxinzelelo lwe-3.1-3.2 g/cm³. Ubuninzi obuphezulu bunegalelo kumandla omatshini kunye nokuqina kwengubo.

I-Thermal conductivity: Iingubo ze-SiC zine-conductivity ephezulu ye-thermal, ngokuqhelekileyo kuluhlu lwe-120-200 W / mK (kwi-20 ° C). Oku kunika i-conductivity efanelekileyo ye-thermal kwiindawo eziphezulu zokushisa kwaye yenza ukuba ilungele ngokukodwa izixhobo zonyango lobushushu kwishishini le-semiconductor.

Indawo yokunyibilika: I-silicon carbide inendawo yokunyibilika malunga ne-2730 ° C kwaye inozinzo oluhle kakhulu lwe-thermal kumaqondo obushushu agqithisileyo.

I-Coefficient yoKwandiswa kweThermal: Iingubo ze-SiC zine-coefficient ephantsi yomgca wokwandisa i-thermal (CTE), ngokuqhelekileyo kuluhlu lwe-4.0-4.5 µm / mK (kwi-25-1000℃). Oku kuthetha ukuba uzinzo lwayo lwe-dimensional lubalaseleyo kunomahluko omkhulu wobushushu.

Ukumelana nokubola: Iingubo ze-SiC zixhathisa ngokugqithiseleyo kwi-corrosion kwi-asidi eqinile, i-alkali kunye neendawo ze-oxidizing, ngakumbi xa usebenzisa i-acids eqinile (efana ne-HF okanye i-HCl), ukuxhathisa kwabo kwe-corrosion kudlula kakhulu kwizinto eziqhelekileyo zetsimbi.

Iingubo ze-SiC zingasetyenziswa kwezi zinto zilandelayo:

Ukucoceka okuphezulu kwegraphite ye-isostatic (i-CTE ephantsi)
Tungsten
Molybdenum
Isilicon Carbide
I-Silicon Nitride
IiComposites zeCarbon-Carbon (CFC)

Iimveliso ezigqunywe ngeSiC ziqhele ukusetyenziswa kwezi ndawo zilandelayo:

Ukuveliswa kwe-chip ye-LED
Ukuveliswa kwePolysilicon
Semiconductorukukhula kwekristale
Silicon kunyeI-SiC epitaxy
Unyango lwe-wafer lobushushu kunye ne-etching

Kutheni ukhetha Amandla eVET?

I-VET Energy ngumvelisi okhokelayo, umvelisi kunye nenkokeli yeemveliso zokugquma ze-SiC eTshayina, ezona mveliso ziphambili zokugquma iSiC ziquka.Isithwali se-wafer esine-SiC coating, SiC coatedi-epitaxial susceptor, Iringi yegraphite eqatywe ngeSiC, Inxalenye yesiqingatha senyanga ene-SiC yokwambathisa, SiC coated carbon-carbon composite, Isikhephe esicatshulwe yiSiC, Isifudumezi esigqunywe yiSiC, njl. njl. Sijonge ngokunyanisekileyo ukuba liqabane lakho lexesha elide eTshayina.

Ukuba unayo nayiphi na imibuzo okanye ufuna iinkcukacha ezongezelelweyo, nceda ungalibazisi ukuqhagamshelana nathi.

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