Yintoni i-sic coating? – I-VET ENERGY

Isilicon Carbideyikhompawundi enzima equlethe i-silicon kunye nekhabhoni, kwaye ifumaneka kwindalo njenge-mineral enqabileyo kakhulu i-moissanite. Iincinci ze-silicon ze-carbide zinokudibaniswa kunye ngokudibanisa ukwenza ii-ceramics ezinzima kakhulu, ezisetyenziswa ngokubanzi kwizicelo ezifuna ukuqina okuphezulu, ngakumbi kwi-procession semiconductor.

Ubume bomzimba beSiC

Yintoni iSiC Coating?

Ukwaleka kwe-SiC yi-silicon carbide eshinyeneyo, ekwaziyo ukumelana nokunxitywa kwe-corrosion ephezulu kunye nokumelana nobushushu kunye nokuhamba kakuhle kwe-thermal. Olu tyaba oluphezulu lwe-SiC lusetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-elektroniki ukukhusela abathwali be-wafer, iziseko kunye nezinto zokufudumeza kwiindawo ezinobungozi kunye nezisebenzayo. I-coating ye-SiC ikwafanelekile kwiziko lokufunxa kunye nokufudumeza isampulu kwi-vacuum ephezulu, indawo esebenzayo kunye ne-oxygen.

Ukucoceka okuphezulu komgangatho we-SiC wokugquma

Yintoni inkqubo yokugquma iSiC?

Umaleko omncinci we-silicon carbide ufakwe kumphezulu we-substrate usebenzisaI-CVD (Ukubekwa komphunga weChemical). I-Deposition idla ngokuqhutyelwa kumaqondo okushisa e-1200-1300 ° C kunye nokuziphatha kokwandisa i-thermal ye-substrate impahla kufuneka ihambelane ne-SiC yokugqoka ukunciphisa uxinzelelo lwe-thermal.

I-CVD SIC FILM UKWAKHIWA KWEKHRISTALI

CVD SIC Coating FILM UKWAKHIWA KWEKHRISTU

Iimpawu ezibonakalayo ze-SiC coating zibonakaliswa ikakhulu ekuxhathiseni ubushushu obuphezulu, ukuqina, ukumelana nokugqwala kunye nokuhanjiswa kwe-thermal.

Ii parameters ezibonakalayo zihlala ngolu hlobo lulandelayo:

Ukuqina: I-coating ye-SiC ngokuqhelekileyo ine-Vickers Hardness kuluhlu lwe-2000-2500 HV, olubanika ukunxiba okuphezulu kakhulu kunye nokuchasana kwempembelelo kwizicelo zoshishino.

Ukuxinana: Iingubo zeSiC zihlala zinoxinzelelo lwe-3.1-3.2 g/cm³. Ubuninzi obuphezulu bunegalelo kumandla omatshini kunye nokuqina kwengubo.

I-Thermal conductivity: Iingubo ze-SiC zine-conductivity ephezulu ye-thermal, ngokuqhelekileyo kuluhlu lwe-120-200 W / mK (kwi-20 ° C). Oku kunika i-conductivity efanelekileyo ye-thermal kwiindawo eziphezulu zokushisa kwaye yenza ukuba ilungele ngokukodwa izixhobo zonyango lobushushu kwishishini le-semiconductor.

Indawo yokunyibilika: I-silicon carbide inendawo yokunyibilika malunga ne-2730 ° C kwaye inozinzo oluhle kakhulu lwe-thermal kumaqondo obushushu agqithisileyo.

I-Coefficient yoKwandiswa kweThermal: Iingubo ze-SiC zine-coefficient ephantsi yomgca wokwandisa i-thermal (CTE), ngokuqhelekileyo kuluhlu lwe-4.0-4.5 µm / mK (kwi-25-1000℃). Oku kuthetha ukuba uzinzo lwayo lwe-dimensional lubalaseleyo kunomahluko omkhulu wobushushu.

Ukumelana nokubola: Iingubo ze-SiC zixhathisa ngokugqithiseleyo kwi-corrosion kwi-asidi eqinile, i-alkali kunye neendawo ze-oxidizing, ngakumbi xa usebenzisa i-acids eqinile (efana ne-HF okanye i-HCl), ukuxhathisa kwabo kwe-corrosion kudlula kakhulu kwizinto eziqhelekileyo zetsimbi.

Iingubo ze-SiC zingasetyenziswa kwezi zinto zilandelayo:

Ukucoceka okuphezulu kwegraphite ye-isostatic (i-CTE ephantsi)
Tungsten
Molybdenum
Isilicon Carbide
I-Silicon Nitride
IiComposites zeCarbon-Carbon (CFC)

Iimveliso ezigqunywe ngeSiC ziqhele ukusetyenziswa kwezi ndawo zilandelayo:

Ukuveliswa kwe-chip ye-LED
Ukuveliswa kwePolysilicon
Semiconductorukukhula kwekristale
Silicon kunyeI-SiC epitaxy
Unyango lwe-wafer lobushushu kunye ne-etching