Izinto ezilungileyo ze-silicon carbide isikhephe inkxaso xa kuthelekiswa nenkxaso yesikhephe se-quartz

Imisebenzi ephambili yeisikhephe se-silicon carbideinkxaso kunye nenkxaso yeenqanawa ze-quartz ziyafana.Isikhephe seSilicon carbideinkxaso inomsebenzi oncomekayo kodwa ixabiso eliphezulu. Ibandakanya enye ubudlelwane kunye nenkxaso yesikhephe se-quartz kwisixhobo sokulungisa ibhetri kunye neemeko zokusebenza ezinzima (ezifana nezixhobo ze-LPCVD kunye nezixhobo zokusasazwa kwe-boron). Kwizixhobo zokusebenza zebhetri ezineemeko eziqhelekileyo zokusebenza, ngenxa yobudlelwane bexabiso, i-silicon carbide kunye nenkxaso ye-quartz yezikhephe ziba ngamacandelo adibeneyo kunye akhuphisanayo.

① Ubudlelwane bokutshintshwa kwi-LPCVD kunye nezixhobo zokusasazwa kwe-boron

Isixhobo se-LPCVD sisetyenziselwa i-oxidation ye-cell tunneling oxidation kunye nenkqubo yokulungiselela umaleko we-polysilicon. Umgaqo wokusebenza:

Ngaphantsi kwemoya ephantsi yoxinzelelo, idityaniswe nobushushu obufanelekileyo, ukusabela kweekhemikhali kunye nokwakheka kwefilimu ye-deposition kufezekiswa ukulungiselela i-ultra-thin tunneling oxide layer kunye nefilimu ye-polysilicon. Kwi-tunneling oxidation kunye nenkqubo yokulungiselela umaleko we-polysilicon, inkxaso yesikhephe inobushushu obuphezulu bokusebenza kunye nefilimu ye-silicon iya kufakwa kumphezulu. I-coefficient yokwandisa i-thermal yequartz yahluke kakhulu kuleyo ye-silicon. Xa isetyenziswe kule nkqubo ingentla, kuyimfuneko ukucoca rhoqo kunye nokususa i-silicon efakwe phezu komhlaba ukukhusela ukuxhaswa kwenqanawa ye-quartz ekuqhekekeni ngenxa yokwandiswa kwe-thermal kunye nokunciphisa ngenxa yokwandiswa kwe-thermal coefficient kwi-silicon. Ngenxa yokucolwa rhoqo kunye namandla asezantsi obushushu obuphezulu, umnikazi wesikhephe se-quartz unobomi obufutshane kwaye uhlala etshintshwa kwindawo ye-oxidation yetonela kunye nenkqubo yokulungiselela i-polysilicon layer, eyonyusa kakhulu ixabiso lemveliso yeseli yebhetri. Ukwandiswa komlinganiso wei-silicon carbideisondele kuleyo yesilicon. Idityanisiweisikhephe se-silicon carbideumnini akafuni pickling kwitonela oxidation kunye doped polysilicon inkqubo yokulungiselela umaleko. Inamandla aphezulu obushushu kunye nobomi benkonzo ende. Yeyona ndlela ilungileyo kumphathi wesikhephe sequartz.

Isixhobo sokwandiswa kweBoron sisetyenziswa ikakhulu kwinkqubo yedoping element zeboron kuhlobo lwe-N-silicon wafer substrate yeseli yebhetri ukulungiselela i-P-type emitter ukwenza i-PN junction. Umgaqo osebenzayo kukuqonda ukusabela kweekhemikhali kunye nokwakheka kwefilimu yokubeka imolekyuli kwindawo yobushushu obuphezulu. Emva kokuba ifilimu yenziwe, inokusasazwa ngokufudumeza kobushushu obuphezulu ukuqonda umsebenzi we-doping we-silicon wafer surface. Ngenxa yobushushu obuphezulu bokusebenza kwezixhobo zokwandisa i-boron, umnini wesikhephe se-quartz unamandla aphantsi obushushu obuphezulu kunye nobomi obufutshane benkonzo kwisixhobo sokwandiswa kwe-boron. Idityanisiweisikhephe se-silicon carbideumnini unamandla obushushu obuphezulu kwaye yenye indlela elungileyo kumphathi wesikhephe se quartz kwinkqubo yokwandiswa kwe boron.

② Ubudlelwane bokutshintshwa kwezinye izixhobo zenkqubo

Iinkxaso zesikhephe ze-SiC zinamandla okuvelisa kunye nokusebenza okugqwesileyo. Amaxabiso abo ngokubanzi aphezulu kunalawo axhasa isikhephe sequartz. Kwiimeko zokusebenza ngokubanzi zezixhobo zokucwangcisa iiseli, umahluko kubomi benkonzo phakathi kweenkxaso zeenqanawa ze-SiC kunye nezixhaso zeenqanawa ze-quartz zincinci. Abathengi abasezantsi bathelekisa kwaye bakhethe phakathi kwexabiso kunye nokusebenza ngokusekelwe kwiinkqubo zabo kunye neemfuno. Inkxaso yesikhephe se-SiC kunye nenkxaso yesikhephe se-quartz iye yahlala kunye kwaye iyakhuphisana. Nangona kunjalo, ingeniso yengeniso ye-SiC exhasa isikhephe iphezulu ngoku. Ngokuhla kwexabiso lemveliso yeSiC isikhephe esixhasayo, ukuba ixabiso lokuthengisa leSiC isikhephe lixhasa ngokusebenzayo liyehla, liya kubeka ukhuphiswano olukhulu kwiinkxaso zesikhephe zequartz.

Umlinganiselo wokusetyenziswa

Indlela yetekhnoloji yeseli ikakhulu iteknoloji ye-PERC kunye ne-TOPCon iteknoloji. Isabelo semarike yeteknoloji ye-PERC yi-88%, kwaye isabelo semarike ye-TOPCon teknoloji yi-8.3%. Isabelo semarike esidityanisiweyo kwezi zibini yi-96.30%.

Njengoko kubonisiwe kulo mfanekiso ungezantsi:

Kwitekhnoloji ye-PERC, izixhaso zesikhephe ziyafuneka kukusasazwa kwe-phosphorus yangaphambili kunye neenkqubo zokufunxa. Kwitekhnoloji ye-TOPCon, izixhaso zesikhephe ziyafuneka kwi-boron diffusion yangaphambili, i-LPCVD, i-back phosphorus diffusion kunye neenkqubo zokufunxa. Okwangoku, izixhaso ze-silicon carbide boat zisetyenziswa kakhulu kwinkqubo ye-LPCVD ye-TOPCon iteknoloji, kwaye ukusetyenziswa kwabo kwinkqubo yokusasazwa kwe-boron kuye kwaqinisekiswa kakhulu.

Umzobo Ukusetyenziswa kwenkxaso yesikhephe kwinkqubo yokusetyenzwa kweeseli

Qaphela: Emva kokugquma ngaphambili nangasemva kwe-PERC kunye ne-TOPCon technologies, kusekho izixhumanisi ezifana nokuprintwa kwesikrini, ukucwina kunye nokuvavanya kunye nokuhlelwa, okungabandakanyi ukusetyenziswa kwezixhaso zesikhephe kwaye azidweliswanga kulo mzobo ungentla.