A iqhekeza lesonkakufuneka idlule kwiinguqu ezintathu ukuze ibe yi-chip ye-semiconductor yokwenyani: okokuqala, i-ingot emise okwebhloko inqunyulwa ibe yi-wafers; Kwinkqubo yesibini, i-transistors ibhalwe ngaphambili kwi-wafer ngokusebenzisa inkqubo yangaphambili; ekugqibeleni, ukupakishwa kwenziwa, oko kukuthi, ngokusebenzisa inkqubo yokusika, iiqhekeza lesonkaiba yitshiphu yesemiconductor epheleleyo. Ingabonwa ukuba inkqubo yokupakisha yeyenkqubo yasemva. Kule nkqubo, i-wafer iya kunqunyulwa kwiichips ezininzi ze-hexahedron. Le nkqubo yokufumana iitshiphusi ezizimeleyo ibizwa ngokuba yi “Singulation”, kwaye inkqubo yokubona ibhodi yewafer kwi cuboids ezizimeleyo ibizwa ngokuba “yiwafer cut (Die Sawing)”. Kutshanje, ngokuphuculwa kokuhlanganiswa kwe-semiconductor, ubukhulu beamaqebengwanaiye yaba yincinci kwaye iyancipha, leyo ngokuqinisekileyo izisa ubunzima obuninzi kwinkqubo "yokubumba".
Ukuvela kwe-wafer dicing
Iinkqubo zangaphambili kunye ne-back-end ziye zavela ngokusebenzisana ngeendlela ezahlukeneyo: ukuvela kweenkqubo zokubuyela umva kunokugqiba isakhiwo kunye nesikhundla se-hexahedron chips ezincinci ezahlulwe kwi-die on the die.iqhekeza lesonka, kunye nesakhiwo kunye nokuma kweepads (iindlela zokuxhuma zombane) kwi-wafer; ngokuchaseneyo, ukuvela kweenkqubo eziphambili zitshintshe inkqubo kunye nendlelaiqhekeza lesonkaumva thinning kwaye "die dicing" kwinkqubo umva-isiphelo. Ke ngoko, ukubonakala okuthe kratya kwephakeji kuya kuba nefuthe elikhulu kwinkqubo yomva. Ngaphezu koko, inani, inkqubo kunye nohlobo lokudayela luya kutshintsha kwakhona ngokuhambelana notshintsho kwinkangeleko yephakheji.
I-Scribe Dicing
Kwiintsuku zokuqala, "ukwaphula" ngokusebenzisa amandla angaphandle yayikuphela kwendlela yokudayela eyayinokwahlulaiqhekeza lesonkakwi-hexahedron iyafa. Nangona kunjalo, le ndlela inezingeloncedo zokuqhawula okanye ukuqhekeka komphetho we-chip encinci. Ukongezelela, ekubeni i-burrs kwi-metal surface ayisuswanga ngokupheleleyo, indawo enqunyiweyo nayo inzima kakhulu.
Ukuze kusonjululwe le ngxaki, indlela yokusika ye "Scribing" yavela, oko kukuthi, ngaphambi "kokuqhekeza", umphezulu weiqhekeza lesonkasisikwe malunga nesiqingatha sobunzulu. "Ukubhala", njengoko igama libonisa, libhekisela ekusebenziseni i-impeller ukubona (isiqingatha-ukusika) icala elingaphambili le-wafer kwangaphambili. Ngeentsuku zokuqala, ii-wafers ezininzi ezingaphantsi kwee-intshi ezi-6 zasebenzisa le ndlela yokusika yokuqala "ukusika" phakathi kwee-chips kwaye emva koko "ukuphuka".
I-Blade Dicing okanye i-Blade Sawing
Indlela yokusika "i-Scribing" yaphuhliswa ngokuthe ngcembe ibe yindlela "ye-Blade dicing" yokusika (okanye i-sawing), yindlela yokusika usebenzisa i-blade kabini okanye kathathu ngokulandelelana. Indlela yokusika "i-Blade" inokwenza i-phenomenon yee-chips ezincinci eziqhekezayo xa "ziqhekeza" emva "kokuhlahlela", kwaye zinokukhusela ama-chips amancinci ngexesha lenkqubo "yesingulation". Ukusika "i-blade" kuhluke kwi-"dicing" yangaphambili yokusika, oko kukuthi, emva kokusika "i-blade", "ayiqhekeza", kodwa ukusika kwakhona nge-blade. Ke ngoko, ikwabizwa ngokuba yi "step dicing" indlela.
Ukuze ukhusele i-wafer kumonakalo wangaphandle ngexesha lenkqubo yokusika, ifilimu iya kusetyenziswa kwi-wafer kwangaphambili ukuze kuqinisekiswe "i-singling" ekhuselekileyo. Ngethuba lenkqubo "yokugaya ngasemva", ifilimu iya kuqhotyoshelwa phambi kwe-wafer. Kodwa ngokuchaseneyo, ekusikeni "i-blade", ifilimu kufuneka ifakwe ngasemva kwe-wafer. Ngexesha le-eutectic die bonding (i-die bonding, ukulungisa ii-chips ezihlukeneyo kwi-PCB okanye isakhelo esisisigxina), ifilimu eqhotyoshelwe ngasemva iya kuwa ngokuzenzekelayo. Ngenxa yokungqubana okuphezulu ngexesha lokusika, amanzi e-DI kufuneka atshizwe ngokuqhubekayo ukusuka macala onke. Ukongezelela, i-impeller kufuneka ifakwe nge-diamond particles ukwenzela ukuba iinqununu zikwazi ukutyunyuzwa ngcono. Ngeli xesha, ukusika (ubukhulu be-blade: ububanzi be-groove) kufuneka bufane kwaye akufanele budlule ububanzi be-dicing groove.
Kwangexesha elide, i-sawing yeyona ndlela isetyenziswa kakhulu yendabuko yokusika. Inzuzo yayo enkulu kukuba inokunqumla inani elikhulu lee-wafers ngexesha elifutshane. Nangona kunjalo, ukuba isantya sokutya sesilayi sandiswa kakhulu, amathuba okuba ne-chiplet edge peeling iya kwanda. Ngoko ke, inani lokujikeleza kwe-impeller kufuneka ilawulwe malunga namaxesha angama-30,000 ngomzuzu. Ingabonwa ukuba iteknoloji yenkqubo ye-semiconductor ihlala iyimfihlo eqokelelwe ngokucothayo ngexesha elide lokuqokelela kunye nokulinga kunye nephutha (kwicandelo elilandelayo malunga ne-eutectic bonding, siya kuxubusha umxholo malunga nokusika kunye ne-DAF).
Dicing phambi kokugaya (DBG): ulandelelwano lokusika lutshintshe indlela
Xa ukusika i-blade kwenziwa kwi-8-intshi ye-diameter wafer, akukho mfuneko yokuba nexhala malunga ne-chiplet edge edge okanye i-cracking. Kodwa njengoko i-diameter ye-wafer inyuka ukuya kwi-intshi ezingama-21 kwaye ubukhulu buba buncinci kakhulu, ukuxobuka kunye nokuqhekeka kwezinto ziqala ukuvela kwakhona. Ukuze unciphise kakhulu impembelelo yomzimba kwi-wafer ngexesha lenkqubo yokusika, indlela ye-DBG "ye-dicing ngaphambi kokugaya" ithatha indawo yokulandelelana kwendabuko. Ngokungafaniyo nendlela yokusika "incakuba" yesiko esika ngokuqhubekayo, i-DBG iqala ukwenza "incakuba" yokusika, kwaye ngokuthe ngcembe ibhityile ubukhulu be-wafer ngokuqhubekayo ucutha icala elingasemva de i-chip yahlulwe. Kunokuthiwa i-DBG yinguqu ephuculweyo yendlela yokusika "i-blade" yangaphambili. Ngenxa yokuba inokunciphisa impembelelo yokusikwa kwesibini, indlela ye-DBG iye yaziwa ngokukhawuleza kwi-"wafer-level packaging".
I-Laser Dicing
Inkqubo ye-wafer-level chip scale package (WLCSP) isebenzisa ikakhulu ukusika i-laser. Ukusika kweLaser kunokunciphisa izinto ezinje ngokuxobula kunye nokuqhekeka, ngaloo ndlela kufumaneke iichips ezikumgangatho ongcono, kodwa xa ubukhulu be-wafer bungaphezulu kwe-100μm, imveliso iya kuncitshiswa kakhulu. Ke ngoko, isetyenziswa kakhulu kwii-wafers ezinobunzima obungaphantsi kwe-100μm (encinci kakhulu). Ukusika kweLaser kusike isilicon ngokusebenzisa i-laser ene-eneji ephezulu kwi-wafer's scribe groove. Nangona kunjalo, xa usebenzisa i-laser yesiqhelo (i-Laser ye-Conventional Laser) indlela yokusika, ifilimu yokukhusela kufuneka ifakwe kwi-wafer surface kwangaphambili. Ngenxa yokufudumeza okanye ukuntywila umphezulu we-wafer nge-laser, olu nxibelelwano lomzimba luya kuvelisa iigrooves kumphezulu we-wafer, kwaye amaqhekeza e-silicon asikiweyo nawo aya kunamathela kumphezulu. Ingabonwa ukuba indlela yokusika i-laser yendabuko iphinda inqumle ngokuthe ngqo umphezulu we-wafer, kwaye kule nkalo, iyafana nendlela yokusika "i-blade".
I-Stealth Dicing (SD) yindlela yokuqala yokusika ngaphakathi kwi-wafer ngamandla e-laser, kwaye emva koko ifake uxinzelelo lwangaphandle kwi-tape eqhotyoshelwe ngasemva ukuze iqhekeze, ngaloo ndlela ihlukanise i-chip. Xa uxinzelelo lufakwe kwi-tape ngasemva, i-wafer iya kuphakanyiswa ngokukhawuleza phezulu ngenxa yokwelula kwe-tape, ngaloo ndlela ihlukanise i-chip. Iinzuzo ze-SD ngaphezu kwendlela yokusika i-laser yendabuko yile: okokuqala, akukho nkunkuma ye-silicon; okwesibini, i-kerf (i-Kerf: ububanzi be-groove yababhali) iyancipha, ngoko ke iichips ezininzi zinokufumaneka. Ukongezelela, i-peeling and cracking phenomenon iya kuncitshiswa kakhulu ngokusebenzisa indlela ye-SD, ebaluleke kakhulu kumgangatho opheleleyo wokusika. Ke ngoko, indlela ye-SD inokwenzeka ukuba ibe yeyona teknoloji idumileyo kwixesha elizayo.
I-Plasma Dicing
Ukusika i-Plasma yitekhnoloji esandul 'ukuphuhliswa esebenzisa i-plasma etching ukusika ngexesha lenkqubo yokuvelisa (Fab). Ukusika i-Plasma kusebenzisa izinto ze-semi-gas endaweni yolwelo, ngoko ke impembelelo yokusingqongileyo incinci. Kwaye indlela yokusika i-wafer yonke ngexesha elinye yamkelwa, ngoko isantya "sokusika" sikhawuleza. Nangona kunjalo, indlela yeplasma isebenzisa igesi yokusabela kweekhemikhali njengento ekrwada, kwaye inkqubo ye-etching inzima kakhulu, ngoko ke inkqubo yayo yokuhamba inzima. Kodwa xa kuthelekiswa nokusikwa kwe "blade" kunye nokusikwa kwe-laser, ukusika kweplasma akubangeli monakalo kumphezulu we-wafer, ngaloo ndlela kuncitshiswe inqanaba lesiphene kunye nokufumana iichips ezininzi.
Kungekudala, ekubeni ubukhulu be-wafer buncitshiswe kwi-30μm, kunye nobhedu oluninzi (Cu) okanye izinto ezisezantsi ze-dielectric (Low-k) zisetyenziswa. Ngoko ke, ukwenzela ukukhusela i-burrs (i-Burr), iindlela zokusika i-plasma nazo ziyakuthandwa. Ewe kunjalo, itekhnoloji yokusika iplasma nayo ihlala iphuhla. Ndiyakholelwa ukuba kwixesha elizayo elingekude, ngolunye usuku akuyi kubakho mfuneko yokunxiba imaski ekhethekileyo xa ucofa, kuba lo ngumgaqo omkhulu wophuhliso wokusika iplasma.
Njengoko ubukhulu be-wafers buncitshiswe ngokuqhubekayo ukusuka kwi-100μm ukuya kwi-50μm kwaye emva koko ukuya kwi-30μm, iindlela zokusika zokufumana iitshiphusi ezizimeleyo nazo ziye zatshintsha kwaye ziphuhlisa ukusuka "ukuphuka" kunye "ne-blade" ukusika ukusika i-laser kunye nokusika i-plasma. Nangona iindlela zokusika ezikhulayo ziye zandisa iindleko zemveliso yenkqubo yokusika ngokwayo, kwelinye icala, ngokunciphisa kakhulu izinto ezingathandekiyo ezifana nokuxobula kunye nokuqhekeka okuhlala kwenzeka kwi-semiconductor chip cutting kunye nokwandisa inani lee-chips ezifunyenwe kwiyunithi nganye ye-wafer. , ixabiso lemveliso yetshiphu enye ibonise ukuhla. Ngokuqinisekileyo, ukwanda kwenani leetshiphusi ezifunyenwe kwindawo nganye ye-wafer inxulumene ngokusondeleyo nokunciphisa ububanzi besitrato sokudayela. Ukusebenzisa ukusika i-plasma, phantse i-20% yeetshiphusi ezingaphezulu zinokufumaneka xa kuthelekiswa nokusebenzisa indlela yokusika "i-blade", ekwasesona sizathu sibalulekileyo sokuba abantu bakhethe ukusika iplasma. Ngophuhliso kunye notshintsho lwee-wafers, ukubonakala kwe-chip kunye neendlela zokupakisha, iinkqubo ezahlukeneyo zokusika ezifana ne-wafer processing technology kunye ne-DBG nazo ziyavela.
Ixesha lokuposa: Oct-10-2024