Silicon Carbide Coating Graphite Tray Isahani na Cover

Ibisobanuro bigufi:

VET Ingufu za silicon karbide itwikiriye grafite isahani hamwe nigifuniko nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.


Ibicuruzwa birambuye

Ibicuruzwa

Ingufu za VETSilicon Carbide Coating Graphite Tray, Isahani, na Cover byashizweho kugirango bitange imikorere yo mu rwego rwo hejuru, itanga ibikorwa byizewe kandi bihoraho mugukoresha igihe kinini, bigatuma ihitamo ryingenzi kubikorwa byo gutunganya wafer mu nganda ziciriritse. Iyi mikorere-yo hejuruAmashanyarazi ya Silicon Carbideifite ubushyuhe budasanzwe bwo kurwanya ubushyuhe, uburinganire bwumuriro burenze, hamwe nubushakashatsi bukomeye bwimiti, cyane cyane mubihe by'ubushyuhe bwo hejuru. Ubwubatsi bwayo bufite isuku nyinshi, bufatanije no kurwanya isuri yateye imbere, bituma biba ngombwa kubidukikije bisaba nkaMOCVD.

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Ibyingenzi byingenzi bya Silicon Carbide Coating Graphite Tray, Isahani, na Cover

1. Kurwanya Ubushyuhe Bwinshi bwa Oxidation Kurwanya:Ihangane n'ubushyuhe bugera kuri 1700 ℃, bikabasha gukora neza mugihe gikabije.

2. Isuku ryinshi hamwe nubushuhe bwubushuhe:Guhorana isuku ihanitse ndetse no gukwirakwiza ubushyuhe ningirakamaro kubikorwa bya MOCVD.

3. Kurwanya ruswa idasanzwe:Kurwanya acide, alkalis, umunyu, hamwe nubutaka butandukanye, bikomeza umutekano muremure mubidukikije bitandukanye.

4. Ubukomere bukabije nubuso bworoshye:Ibiranga ubuso bunini hamwe nibice byiza, bitezimbere muri rusange no kwihanganira kwambara.

5. Ubuzima bwagutse bwa serivisi:Yashizweho kuramba, kurenza ibisanzwesilicon karbide-yashushanyije grafite susceptorsmuburyo bukomeye bwo gutunganya ibidukikije.

 

CVD SiC薄膜基本物理性能

Ibyingenzi bifatika bya CVD SiCgutwikira

性质 / Umutungo

典型数值 / Agaciro gasanzwe

晶体结构 / Imiterere ya Crystal

FCC β icyiciro多晶,主要为(111 )取向

密度 Ubucucike

3.21 g / cm³

硬度 / Gukomera

2500 维氏硬度( 500g umutwaro)

晶粒大小 / Ibinyampeke SiZe

2 ~ 10 mm

纯度 / Ubuziranenge bwa Shimi

99.99995%

热容 / Ubushyuhe

640 J · kg-1· K.-1

升华温度 / Ubushyuhe bwo hejuru

2700 ℃

抗弯强度 / Imbaraga zoroshye

415 MPa RT amanota 4

杨氏模量 / Modulus

430 Gpa 4pt yunamye, 1300 ℃

导热系数 / ThermalImyitwarire

300W · m-1· K.-1

热膨胀系数 Kwagura Ubushyuhe (CTE)

4.5 × 10-6K-1

Ubuhanga bwa VET mu buhanga bwa Graphite na Silicon Carbide Solutions

Nkumushinga wizewe, VET Energy yihariye mugushushanya-gushushanya grafite ya susiteptor hamwe na silicon carbide coating ibisubizo. Dutanga ibicuruzwa bitandukanye bigenewe inganda za semiconductor ninganda zifotora, harimoIbikoresho bya SiCnk'imirongo, amasahani, n'ibifuniko. Ibicuruzwa byacu bikubiyemo kandi uburyo butandukanye bwo gutwikira, nkaSiC ikingira MOCVD, Igikoresho cya TaC, ibirahuri bya karuboni, hamwe na pirolitike ya karubone, byemeza ko twujuje ibyifuzo bitandukanye byinganda zikoranabuhanga.

Itsinda ryacu rya tekinike rifite uburambe, rigizwe ninzobere mubigo bikomeye byubushakashatsi bwimbere mu gihugu, bitanga ibisubizo byuzuye kubakiriya. Turakomeza kunonosora inzira zacu zateye imbere, harimo tekinoroji yihariye yemewe yongerera umubano hagati ya carbide ya silicon na substrate ya grafite, kugabanya ibyago byo gutandukana no kongera ubuzima bwibicuruzwa.

Porogaramu ninyungu mubikorwa bya Semiconductor

UwitekaSilicon Carbide Coating ya MOCVDituma ibishushanyo mbonera bya grafite bigira ingaruka nziza mubushyuhe bwo hejuru, ibidukikije byangirika. Byaba bikoreshwa nka grafite wafer itwara cyangwa ibindi bice bya MOCVD, ibyo byuma bya silicon karbide-yometseho suseptors byerekana kuramba no gukora. Kubashaka ibisubizo byizewe muriSiC-yashushanyijeho grafite susceptorisoko, VET Ingufu za silicon karbide yometse kuri grafite tray, isahani, hamwe nigifuniko bitanga amahitamo akomeye kandi atandukanye yujuje ibyifuzo bikenerwa ninganda za semiconductor.

Mu kwibanda ku bumenyi buhanitse, ingufu za VET ziyemeje gutanga umusaruro ushimishije wa SiC ushyizweho na grafite ibisubizo biganisha ku guhanga udushya mu gutunganya igice cya kabiri ndetse no kwemeza imikorere yizewe mubisabwa byose bijyanye na MOCVD.

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VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nububiko butandukanye nka SiC coating, TaC coating, carbone carbone coating, pyrolytic carbone coating, nibindi, birashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora.

Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!

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