Ubushinwa bukora SiC Coated Graphite MOCVD Epitaxy Susceptor

Ubushinwa bukora SiC Yashushanyijeho Graphite MOCVD Epitaxy Susceptor Igishusho

Ibisobanuro bigufi:

Isuku <5ppm
Uniform Guhuza neza doping
Ens Ubucucike bukabije no gufatana
‣ Kurwanya ruswa no kurwanya karubone

Custom Guhitamo umwuga
Time Igihe gito cyo kuyobora
Supply Gutanga ibintu bihamye
Control Kugenzura ubuziranenge no gukomeza gutera imbere

Epitaxy ya GaN kuri safiro(RGB / Mini / Micro LED);
Epitaxy ya GaN kuri Si Substrate(UVC);
Epitaxy ya GaN kuri Si Substrate(Igikoresho cya elegitoroniki);
Epitaxy ya Si kuri Si Substrate(Inzira ihuriweho);
Epitaxy ya SiC kuri Substrate ya SiC(Substrate);
Epitaxy ya InP kuri InP

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Ibicuruzwa birambuye

Ibicuruzwa

Kugura neza MOCVD Susceptor Kugura kumurongo mubushinwa

Wafer ikeneye kunyura munzira nyinshi mbere yuko yitegura gukoreshwa mubikoresho bya elegitoroniki. Inzira imwe yingenzi ni silicon epitaxy, aho wafers itwarwa na sisitemu ya grafite. Imiterere nubwiza bwa susceptors bigira ingaruka zikomeye kumiterere ya epitaxial ya wafer.

Kubice bya firime yoroheje nka epitaxy cyangwa MOCVD, VET itanga ultra-pure graphiteequothing ikoreshwa mugushigikira substrate cyangwa "wafers". Intandaro yimikorere, ibi bikoresho, epitaxy susceptors cyangwa satelite ya MOCVD, babanje gukorerwa ibidukikije:

Ubushyuhe bwo hejuru.
Icyuho kinini.
Gukoresha gase ya gazi ibanziriza.
Kwanduza zeru, kubura gukuramo.
Kurwanya aside ikomeye mugihe cyo gukora isuku

VET Ingufu nukuri gukora ibicuruzwa byabugenewe bya grafite na silicon karbide hamwe na coating ya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Ibiranga ibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111 ）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1