SiC Yashushanyijeho Graphite Base

Ibisobanuro bigufi:

VET Ingufu SiC itwikiriye grafite itwara ibicuruzwa nigikorwa cyo hejuru cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.

Aho byaturutse:Ubushinwa

Imiterere ya Crystal:Icyiciro cya FCCβ

Ubucucike:3.21 g / cm

Gukomera:2500 Vickers

Ingano y'ibinyampeke:2 ~ 10 mm

Ubuziranenge bwa Shimi:99.99995%

Ubushobozi bwo gushyushya:640J · kg-1 · K-1

Ubushyuhe bwa Sublimation:2700 ℃

Imbaraga zidasanzwe:415 Mpa (RT 4-Ingingo)

Umusore Modulus:430 Gpa (4pt yunamye, 1300 ℃)

Kwagura Ubushyuhe (CTE):4.5 10-6K-1

Amashanyarazi:300 （W / MK）

Ohereza imeri kuri twe Kuramo nka PDF

Ibicuruzwa birambuye

Ibicuruzwa

SiC itwikiriye grafite itwara nikintu cyingenzi gikoreshwa mubikorwa bitandukanye bya semiconductor. Twifashishije tekinoroji yacu yemewe kugirango dukore carbide ya silicon ifite isuku ryinshi cyane, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

Ibiranga ibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111 ）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nububiko butandukanye nka SiC coating, TaC coating, carbone carbone coating, pyrolytic carbone coating, nibindi, birashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora.

Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!