Graphite ashyushya Silicon karbide (SiC) SiC itwikiriye SiC

Ibisobanuro bigufi:

Inshingano zacu zirimo ubushyuhe, gushyigikira umusaraba, gukingira ubushyuhe hamwe no kubika ibintu byinshi muburyo bumwe bwo gukura-kristu.

Turatanga kandi suseptors kuri silicon epitaxy na reaction ya MOCVD. Azwiho guhora twujuje ubuziranenge kandi byihariye, dutanga porogaramu yihariye yo kurangiza binyuze mu gukora isuku, gutunganya imashini cyangwa gutwikira.


Ibicuruzwa birambuye

Ibicuruzwa

 

Ibisobanuro bya tekiniki

VET-M3

Ubucucike bwinshi (g / cm3)

851.85

Ibirimo ivu (PPM)

00500

Gukomera ku nkombe

≥45

Kurwanya Byihariye (μ.Ω.m)

≤12

Imbaraga zoroshye (Mpa)

≥40

Imbaraga Zikomeretsa (Mpa)

≥70

Icyiza. Ingano y'ibinyampeke (μm)

≤43

Coefficient yo Kwagura Ubushyuhe Mm / ° C.

≤4.4 * 10-6

 

 

Ibicuruzwa bigezweho bishya Graphite ashyushya Ibyiza ni ukuzigama ingufu, agaciro gakomeye nigiciro gito cyo kubungabunga.

Ibicuruzwa bigezweho bishya Graphite ashyushya Ibyiza ni ukuzigama ingufu, agaciro gakomeye nigiciro gito cyo kubungabunga.

Ibicuruzwa bigezweho bishya Graphite ashyushya Ibyiza ni ukuzigama ingufu, agaciro gakomeye nigiciro gito cyo kubungabunga.

Gupakira ibisobanuro:

Ibicuruzwa bigezweho bishya Graphite ashyushya Ibyiza ni ukuzigama ingufu, agaciro gakomeye nigiciro gito cyo kubungabunga.


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