vet-china yemeza ko buri KurambaSilicon Carbide Wafer Gukoresha Paddleifite imikorere myiza kandi iramba. Iyi silicon karbide wafer ikoresha paddle ikoresha uburyo bugezweho bwo gukora kugirango harebwe niba imiterere yimikorere n'imikorere bikomeza kuba mubushyuhe bwinshi hamwe nibidukikije byangirika. Igishushanyo gishya gitanga inkunga nziza kubikorwa bya semiconductor wafer, cyane cyane kubikorwa byikora neza.
SiC Cantilever Paddleni igice cyihariye gikoreshwa mubikoresho byo gukora semiconductor nk'itanura rya okiside, itanura rya diffuzione, hamwe n'itanura rya annealing, ikoreshwa nyamukuru ni ugupakira wafer no gupakurura, gushyigikira no gutwara wafer mugihe cy'ubushyuhe bwo hejuru.
Inzego rusangeByaSiCcantileverpaddle: imiterere ya cantilever, yashyizwe kumurongo umwe nubuntu kurundi, mubisanzwe ifite igishushanyo mbonera na paddle.
GukoraprincipleByaSiCcantileverpaddle:
Ikariso ya kantileveri irashobora kuzamuka hejuru no hepfo cyangwa inyuma no imbere mucyumba cy'itanura, irashobora gukoreshwa mu kwimura waferi kuva aho zipakirwa zikajya aho zitunganyirizwa, cyangwa hanze y’aho zitunganyirizwa, gushyigikira no guhagarika waferi mugihe cyo gutunganya ubushyuhe bwinshi.
Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
Umutungo | Agaciro gasanzwe |
Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
Ibirimo | > 99,96% |
Ibirimo Si kubuntu | <0.1% |
Ubucucike bwinshi | 2.60-2.70 g / cm3 |
Ikigaragara | <16% |
Imbaraga zo kwikuramo | > 600 MPa |
Imbaraga zikonje | 80-90 MPa (20 ° C) |
Imbaraga zunamye | 90-100 MPa (1400 ° C) |
Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
Ubushyuhe bwumuriro @ 1200 ° C. | 23 W / m • K. |
Modulus | 240 GPa |
Kurwanya ubushyuhe | Nibyiza cyane |