UwitekaSilicon Carbide Yashizweho Urupapuro rwibanzeGerageza ByakoreshejweIbikoresho bya Epitaxialyakozwe mu Bushinwa na Vet Energy, ikaba ari imwe mu nganda n’abatanga ibicuruzwa mu Bushinwa. GuraSilicon Carbide Yashizweho Urupapuro rwibanzeGariyamoshi ikoreshwa mu BushinwaIbikoresho bya Epitaxialku giciro gito kiva mu ruganda rwacu. Dufite ibirango byacu kandi dushyigikiye byinshi. Niba ushishikajwe nibicuruzwa byacu, tuzaguha igiciro cyiza. Murakaza neza kugura ibicuruzwa byagabanijwe aribishya kandi byiza-byiza muri twe.
Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.
Ibyingenzi byingenzi:
1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu na reagent.
Ibyingenzi byingenzi byerekana CVD-SIC:
Ibiranga SiC-CVD | ||
Imiterere ya Crystal | FCC β icyiciro | |
Ubucucike | g / cm ³ | 3.21 |
Gukomera | Vickers gukomera | 2500 |
Ingano y'ibinyampeke | μm | 2 ~ 10 |
Ubuziranenge bwa Shimi | % | 99.99995 |
Ubushyuhe | J · kg-1· K.-1 | 640 |
Ubushyuhe bwo hejuru | ℃ | 2700 |
Imbaraga zidasanzwe | MPa (RT-amanota 4) | 415 |
Umusore Modulus | Gpa (4pt yunamye, 1300 ℃) | 430 |
Kwagura Ubushyuhe (CTE) | 10-6K-1 | 4.5 |
Amashanyarazi | (W / mK) | 300 |
Kuki ushobora guhitamo umuganga w'amatungo?
1) dufite ingwate ihagije.
2) gupakira umwuga byerekana ubudakemwa bwibicuruzwa. Ibicuruzwa bizakugezaho neza.
3) imiyoboro myinshi y'ibikoresho ituma ibicuruzwa bigushikirizwa.