Igice cya SiC Gishushanyije Igice cya kabiriis a urufunguzoibice bikoreshwa mubikorwa byo gukora semiconductor, cyane cyane kubikoresho bya epitaxial ya SiC.Dukoresha tekinoroji yatanzwe kugirango dukore igice cya kabiriubuziranenge bukabije,byizagutwikirauburinganiren'ubuzima bwiza bwa serivisi, Nka Nkaimiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.
Ingufu za VET ni iuruganda nyarwo rukora ibicuruzwa bya grafite na silicon karbide hamwe na CVD,irashobora gutangazitandukanyeibice byabigenewe bya semiconductor ninganda zifotora. Our tekinike tekinike iva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwuga byinshikuri wewe.
Turakomeza guteza imbere inzira ziterambere kugirango dutange ibikoresho byateye imbere,nabakoze ikoranabuhanga ryemewe ryemewe, rishobora gutuma isano iri hagati yikingirizo hamwe na substrate ikomera kandi ntibikunze gutandukana.
Fibiryo byibicuruzwa byacu:
1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700℃.
2. Isuku ryinshi kandiuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba
| CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| 晶体结构 / Imiterere ya Crystal | FCC β icyiciro多晶，主要为（111 ）取向 |
| 密度 Ubucucike | 3.21 g / cm³ |
| 硬度 / Gukomera | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ibinyampeke SiZe | 2 ~ 10 mm |
| 纯度 / Ubuziranenge bwa Shimi | 99.99995% |
| 热容 / Ubushyuhe | 640 J · kg-1· K.-1 |
| 升华温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
| 抗弯强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
| 杨氏模量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
| 导热系数 / ThermalImyitwarire | 300W · m-1· K.-1 |
| 热膨胀系数 Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!
