Umurongo wibicuruzwa bya VET ntabwo bigarukira kuri GaN kuri wafers ya SiC. Dutanga kandi ibikoresho byinshi bya semiconductor substrate, harimo Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nibindi. Byongeye kandi, turimo guteza imbere cyane ibikoresho bishya bigari bya semiconductor, nka Gallium Oxide Ga2O3 na AlN Wafer, kugirango uhuze ejo hazaza ingufu za elegitoroniki yinganda zikenewe kubikoresho bikora neza.
Ingufu za VET zitanga serivisi zoroshye zo kwihindura, kandi zirashobora guhitamo ibice bya epitaxial ya GaN yubunini butandukanye, ubwoko butandukanye bwa doping, nubunini bwa wafer butandukanye ukurikije ibyo abakiriya bakeneye. Mubyongeyeho, turatanga kandi ubufasha bwa tekiniki bwumwuga na nyuma yo kugurisha kugirango dufashe abakiriya gutezimbere byihuse ibikoresho bya elegitoroniki bikora cyane.
KUBONA UMWIHARIKO
* n-Pm = n-ubwoko bwa Pm-Urwego, n-Ps = n-ubwoko bwa Ps-Urwego, Sl = Semi-lnsulating
Ingingo | 8-Inch | 6-Inch | 4-Inch | ||
nP | n-Pm | n-Zab | SI | SI | |
TTV (GBIR) | ≤6um | ≤6um | |||
Umuheto (GF3YFCD) -Agaciro keza | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Intambara (GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV (SBIR) -10mmx10mm | <2 mm | ||||
Wafer Edge | Beveling |
BURUNDU
* n-Pm = n-ubwoko bwa Pm-Urwego, n-Ps = n-ubwoko bwa Ps-Urwego, Sl = Semi-lnsulating
Ingingo | 8-Inch | 6-Inch | 4-Inch | ||
nP | n-Pm | n-Zab | SI | SI | |
Kurangiza | Impande ebyiri Optical Polonye, Si- Isura CMP | ||||
Ubuso | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Isura Ra≤0.2nm | |||
Imipira | Nta na kimwe cyemewe (uburebure n'ubugari≥0.5mm) | ||||
Ibimenyetso | Nta na kimwe cyemewe | ||||
Igishushanyo (Si-Isura) | Qty.≤5, Guhuriza hamwe | Qty.≤5, Guhuriza hamwe | Qty.≤5, Guhuriza hamwe | ||
Ibice | Nta na kimwe cyemewe | ||||
Guhezwa | 3mm |