Ongera ushyireho Silicon Carbide Wafer Ubwato hamwe na CVD

Ibisobanuro bigufi:

VET Ingufu zongeye gushyirwaho Silicon Carbide Wafer Ubwato nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza bya karubide ya silicon yongeye gushyirwaho

Carbide ya silicon yongeye gushyirwaho (R-SiC) ni ibikoresho bikora cyane hamwe n'ubukomezi bwa kabiri nyuma ya diyama, ikorwa ku bushyuhe buri hejuru ya 2000 ℃. Igumana ibintu byinshi byiza bya SiC, nkimbaraga zubushyuhe bwo hejuru, kurwanya ruswa ikomeye, kurwanya okiside nziza, kurwanya ubushyuhe bwumuriro nibindi.

Properties Ibikoresho byiza bya mashini. Carbide yongeye gushyirwaho karbide ifite imbaraga nubukomezi kurenza fibre ya karubone, irwanya ingaruka nyinshi, irashobora gukina imikorere myiza mubushuhe bukabije, irashobora gukina imikorere iringaniza mubihe bitandukanye. Mubyongeyeho, ifite kandi ihinduka ryiza kandi ntabwo yangiritse byoroshye kurambura no kunama, bitezimbere cyane imikorere yayo.

Resist Kurwanya ruswa. Carbide ya silicon yongeye gushyirwaho ifite imbaraga nyinshi zo kurwanya ruswa yibitangazamakuru bitandukanye, irashobora gukumira isuri yibitangazamakuru bitandukanye byangirika, irashobora kugumana imiterere yubukanishi igihe kirekire, ifatanye cyane, kuburyo ifite ubuzima burebure. Mubyongeyeho, ifite kandi ubushyuhe bwiza bwumuriro, irashobora guhuza nurwego runaka rwubushyuhe, kunoza ingaruka zikoreshwa.

Sin Sinteri ntigabanuka. Kuberako inzira yo gucumura itagabanuka, ntagahato gasigaye kazatera guhindagurika cyangwa gucika kubicuruzwa, kandi ibice bifite imiterere igoye kandi byuzuye birashobora gutegurwa.

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重结晶碳化硅物理特性

Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho

性质 / Umutungo

典型数值 / Agaciro gasanzwe

使用温度/ Ubushyuhe bwo gukora (° C)

1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije)

SiC含量/ Ibirimo

> 99,96%

自由Si 含量/ Ibirimo Si kubuntu

<0.1%

体积密度/Ubucucike bwinshi

2.60-2.70 g / cm3

气孔率/ Ikigaragara

<16%

抗压强度/ Imbaraga zo kwikuramo

> 600MPa

常温抗弯强度/Imbaraga zikonje

80-90 MPa (20 ° C)

高温抗弯强度Imbaraga zunamye

90-100 MPa (1400 ° C)

热膨胀系数/ Kwiyongera k'ubushyuhe @ 1500 ° C.

4.70 10-6/ ° C.

导热系数/Ubushyuhe bwumuriro @ 1200 ° C.

23W / m • K.

杨氏模量/ Modulus

240 GPa

抗热震性/ Kurwanya inkuba

Nibyiza cyane

Ingufu za VET ni iuruganda nyarwo rukora ibicuruzwa bya grafite na silicon karbide hamwe na CVD,irashobora gutangazitandukanyeibice byabigenewe bya semiconductor ninganda zifotora. Our tekinike tekinike iva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwuga byinshikuri wewe.

Turakomeza guteza imbere inzira ziterambere kugirango dutange ibikoresho byateye imbere,nabakoze ikoranabuhanga ryemewe ryemewe, rishobora gutuma isano iri hagati yikingirizo hamwe na substrate ikomera kandi ntibikunze gutandukana.

CVD SiC薄膜基本物理性能

Ibyingenzi bifatika bya CVD SiCgutwikira

性质 / Umutungo

典型数值 / Agaciro gasanzwe

晶体结构 / Imiterere ya Crystal

FCC β icyiciro多晶,主要为(111 )取向

密度 Ubucucike

3.21 g / cm³

硬度 / Gukomera

2500 维氏硬度( 500g umutwaro)

晶粒大小 / Ibinyampeke SiZe

2 ~ 10 mm

纯度 / Ubuziranenge bwa Shimi

99.99995%

热容 / Ubushyuhe

640 J · kg-1· K.-1

升华温度 / Ubushyuhe bwo hejuru

2700 ℃

抗弯强度 / Imbaraga zoroshye

415 MPa RT amanota 4

杨氏模量 / Modulus

430 Gpa 4pt yunamye, 1300 ℃

导热系数 / ThermalImyitwarire

300W · m-1· K.-1

热膨胀系数 Kwagura Ubushyuhe (CTE)

4.5 × 10-6K-1

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