ʻO ka pāpaʻi pā a me ka uhi ʻana o ka Silicon Carbide Coating Graphite Tray Plate

ʻO ka pāpaʻi pāpaʻi kiʻi kiʻi kiʻi silikino a me ke kiʻi i uhi ʻia

ʻO ka wehewehe pōkole:

ʻO ka VET Energy silicon carbide coating graphite plate a me ka uhi kahi huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūpaʻa a hilinaʻi hoʻi i kahi manawa lōʻihi. Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ka like ʻana o ka wela, ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka erosion, e hana ana i ka hopena kūpono no nā noi hana wafer.

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

VET EnergyʻO ka pāpaʻi kiʻi kiʻi kiʻi silika, Plate, and Cover ua hana ʻia no ka hoʻokō ʻana i ka hana kiʻekiʻe, e hāʻawi ana i ka hana hilinaʻi a paʻa i ka hoʻohana lōʻihi ʻana, e lilo ia i mea koho nui no nā noi hana wafer i ka ʻoihana semiconductor. ʻO kēia hana kiʻekiʻeʻO ka pāpaʻi kiʻi kiʻi kiʻi silikakaena kūʻokoʻa wela, ʻoi aku ka like ʻana o ka wela, a me ke kūpaʻa kemika koʻikoʻi, ʻoi loa i nā kūlana wela kiʻekiʻe. ʻO kāna hana hoʻomaʻemaʻe kiʻekiʻe, i hui pū ʻia me ke kūpaʻa erosion kiʻekiʻe, he mea nui ia no nā kaiapuni koi e like meNā mea mālama MOCVD.

ʻO nā hiʻohiʻona nui o ka Silicon Carbide Coating Graphite Tray, Plate, a me ka uhi

1. Kiekie-Mahana Oxidation Kū'ē:Kū i nā mahana a hiki i 1700 ℃, hiki iā ia ke hana hilinaʻi i nā kūlana koʻikoʻi.

2. Hoʻomaʻemaʻe kiʻekiʻe a me Thermal Uniformity:He mea koʻikoʻi ka hoʻomaʻemaʻe kiʻekiʻe a me ka hāʻawi ʻana i ka wela no nā noi MOCVD.

3. Kū'ē Kū'ē Kū'ē:Kū'ē i nā waikawa, nā alkali, nā paʻakai, a me nā mea hoʻokalakupua like ʻole, e hōʻoiaʻiʻo ana i ka paʻa lōʻihi i nā ʻano like ʻole.

4. Paʻa kiʻekiʻe a me ka ʻili paʻa:Loaʻa i kahi ʻili paʻa me nā ʻāpana maikaʻi, e hoʻomaikaʻi i ka lōʻihi holoʻokoʻa a me ke kūpaʻa ʻana i ka ʻaʻahu.

5. Hoʻonui i ke ola lawelawe:Hana ʻia no ka lōʻihi o ke ola, ʻoi aku ka maikaʻi o ka hana maʻamaunā mea hoʻopiʻi graphite i uhi ʻia me ka silika carbidei loko o nā wahi hana semiconductor koʻikoʻi.

CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana
性质 / Waiwai	典型数值 / Waiwai maʻamau
晶体结构 / Hoʻomoe Crystal	Māhele FCC β多晶，主要为（111）取向
密度 / Paʻa	3.21 g/cm³
硬度 / Oolea	2500 维氏硬度（500g load）
晶粒大小 / ʻAiʻa palaoa	2~10μm
纯度 / Maemae Kemika	99.99995%
热容 / Hikina Wela	640 J·kg^-1·K^-1
升华温度 / Kaumaha Sublimation	2700 ℃
抗弯强度 / Ka Ikaika Pilikia	415 MPa RT 4-point
杨氏模量 / 'Ōpio's Modulus	430 Gpa 4pt piko, 1300 ℃
导热系数 / ThermalʻO ka hoʻokō	300W·m^-1·K^-1
热膨胀系数 / Hoʻonui wela (CTE)	4.5×10^-6K^-1

ʻO ka ʻike loea o VET Energy i nā ʻano hoʻoponopono graphite a me Silicon Carbide

Ma ke ʻano he mea hana hilinaʻi, ʻike ʻia ʻo VET Energy i nā susceptors graphite i hoʻolālā ʻia maʻamau a me nā hāʻina carbide coating silicon. Hāʻawi mākou i nā huahana i hoʻohālikelike ʻia no ka semiconductor a me nā ʻoihana photovoltaic, meNā ʻāpana graphite i uhi ʻia ʻo SiCe like me nā pā, nā pā, a me nā uhi. Hoʻokomo pū kā mākou laina huahana i nā koho uhi like ʻole, e like meʻO ka uhi SiC no MOCVD, ka uhi ʻana o TaC, uhi kalapona aniani, a me ka pyrolytic carbon coating, e hōʻoia ana e hoʻokō mākou i nā koi like ʻole o nā ʻoihana kiʻekiʻe.

ʻO kā mākou hui ʻenehana loea, ʻo ia hoʻi nā poʻe loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hāʻawi i nā hoʻonā waiwai piha no nā mea kūʻai aku. Hoʻomaʻamaʻa mau mākou i kā mākou mau hana holomua, me kahi ʻenehana patented kūʻokoʻa e hoʻonui ai i ka hoʻopaʻa ʻana ma waena o ka silicon carbide coating a me ka substrate graphite, e hōʻemi ana i ka pilikia o ka wehe ʻana a hoʻonui i ke ola o ka huahana.

Nā noi a me nā pono i ka hana semiconductor

ʻO kaʻO ka uhi ʻana o Silicon Carbide no MOCVDhana maikaʻi loa kēia mau graphite susceptors i ka wela kiʻekiʻe a me ka corrosive kaiapuni. Inā hoʻohana ʻia e like me nā mea lawe wafer graphite a i ʻole nā mea MOCVD ʻē aʻe, hōʻike kēia mau susceptors carbide-coated silicon i ka lōʻihi a me ka hana. No ka poʻe e ʻimi nei i nā hāʻina hilinaʻi ma kaSusceptor graphite i uhi ʻia ʻo SiCmakeke, hāʻawi ka VET Energy ka silicon carbide-coated graphite tray, pā, a me ka uhi i kahi koho paʻa a maʻalahi e hoʻokō i nā koi koʻikoʻi o ka ʻoihana semiconductor.

Ma ka nānā ʻana i ka ʻepekema waiwai holomua, ua kūpaʻa ʻo VET Energy i ka hāʻawi ʻana i nā hāmeʻa kiʻekiʻe SiC-coated graphite e alakaʻi i ka hana hou i ka hoʻoili semiconductor a hōʻoia i ka hana hilinaʻi ma nā noi āpau e pili ana i ka MOCVD.

ʻO VET Energy ka mea hana maoli i nā huahana graphite a me nā silicon carbide me nā ʻāpana like ʻole e like me ka uhi SiC, ka uhi TaC, ka uhi kalapona aniani, ka uhi kalapona pyrolytic, a me nā mea ʻē aʻe, hiki ke hāʻawi i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic.

ʻO kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoi aku ka ʻoihana no ʻoe.

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!