Kina Mea Hana SiC Coated Graphite MOCVD Epitaxy Susceptor

ʻO Kina Mea Hana ʻO SiC Coated Graphite MOCVD Epitaxy Susceptor Kiʻi Hōʻikeʻike

ʻO ka wehewehe pōkole:

Maʻemaʻe <5ppm
‣ Hoʻohui like doping maikaʻi
‣ Kiʻekiʻe kiʻekiʻe a pili
‣ ʻO ka pale anti-corrosive maikaʻi a me ke kalapona

‣ Hoʻoponopono ʻoihana
‣ He manawa alakaʻi pōkole
‣ lako paʻa
‣ Ka mālama maikaʻi a me ka hoʻomaikaʻi mau

Epitaxy o GaN ma Sapphire(RGB / Mini / Micro LED);
Epitaxy o GaN ma Si Substrate(UVC);
Epitaxy o GaN ma Si Substrate(Electronical Device);
Epitaxy o Si ma Si substrate(Kaapuni hoʻohui);
Epitaxy o SiC ma ka SiC substrate(Pula;
Epitaxy o InP ma InP

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

Kūʻai ʻo MOCVD Susceptor kiʻekiʻe ma ka pūnaewele ma Kina

Pono e hele ka wafer ma mua o ka mākaukau no ka hoʻohana ʻana i nā mea uila. ʻO kekahi kaʻina hana koʻikoʻi ʻo ka epitaxy silika, kahi e lawe ʻia ai nā wafers ma luna o nā susceptors graphite. ʻO nā waiwai a me ka maikaʻi o nā susceptors he hopena koʻikoʻi i ka maikaʻi o ka papa epitaxial o ka wafer.

No nā ʻāpana hoʻoheheʻe kiʻiʻoniʻoni lahilahi e like me ka epitaxy a i ʻole MOCVD, hāʻawi ʻo VET i nā mea hana graphite ultra-maʻemaʻe i hoʻohana ʻia e kākoʻo i nā substrate a i ʻole "wafers". Ma ke kumu o ke kaʻina hana, ʻo kēia mau mea hana, epitaxy susceptors a i ʻole nā pae satellite no ka MOCVD, e kau mua ʻia i ke kaiapuni deposition:

Kiʻekiʻe wela.
Māmā kiʻekiʻe.
Ka hoʻohana ʻana i nā mea hoʻokele kinoea.
Zero contamination, nele o ka ihi.
Ke kū'ē i nā waikawa ikaika i ka wā e hoʻomaʻemaʻe ai

ʻO VET Energy ka mea hana maoli o nā huahana graphite a me nā huahana silicon carbide me ka uhi no ka semiconductor a me ka ʻoihana photovoltaic. Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

Nā hiʻohiʻona o kā mākou huahana:

1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700 ℃.
2. ʻO ka hoʻomaʻemaʻe kiʻekiʻe a me ke kūlike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.
4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi

CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana
性质 / Waiwai	典型数值 / Waiwai maʻamau
晶体结构 / Hoʻomoe Crystal	Māhele FCC β多晶，主要为（111）取向
密度 / Paʻa	3.21 g/cm³
硬度 / Oolea	2500 维氏硬度（500g load）
晶粒大小 / ʻAiʻa palaoa	2~10μm
纯度 / Maemae Kemika	99.99995%
热容 / Hikina Wela	640 J·kg^-1·K^-1
升华温度 / Kaumaha Sublimation	2700 ℃
抗弯强度 / Ka Ikaika Pilikia	415 MPa RT 4-point
杨氏模量 / 'Ōpio's Modulus	430 Gpa 4pt piko, 1300 ℃
导热系数 / ThermalʻO ka hoʻokō	300W·m^-1·K^-1
热膨胀系数 / Hoʻonui wela (CTE)	4.5×10^-6K^-1