SiC uhi graphite MOCVD Wafer lawe/susceptor
Hana ʻia kā mākou mau mea hoʻomalu āpau i ka graphite isostatic ikaika kiʻekiʻe. E pōmaikaʻi mai ka maʻemaʻe kiʻekiʻe o kā mākou graphites - hoʻomohala kūikawā no nā kaʻina paʻakikī e like me ka epitaxy, ka ulu ʻana o ke aniani, ka hoʻokomo ʻana i ka ion a me ka etching plasma, a me ka hana ʻana i nā chips LED.
Nā hiʻohiʻona o kā mākou huahana:
1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700 ℃.
2. ʻO ka hoʻomaʻemaʻe kiʻekiʻe a me ke kūlike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.
4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi
CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana | |
性质 / Waiwai | 典型数值 / Waiwai maʻamau |
晶体结构 / Hoʻomoe Crystal | Māhele FCC β多晶,主要为(111)取向 |
密度 / Paʻa | 3.21 g/cm³ |
硬度 / Oolea | 2500 维氏硬度(500g load) |
晶粒大小 / ʻAiʻa palaoa | 2~10μm |
纯度 / Maemae Kemika | 99.99995% |
热容 / Hikina Wela | 640 J·kg-1·K-1 |
升华温度 / Kaumaha Sublimation | 2700 ℃ |
抗弯强度 / Ka Ikaika Pilikia | 415 MPa RT 4-point |
杨氏模量 / 'Ōpio's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
导热系数 / ThermalʻO ka hoʻokō | 300W·m-1·K-1 |
热膨胀系数 / Hoʻonui wela (CTE) | 4.5×10-6K-1 |
ʻO VET Energy ka mea hana maoli i nā huahana graphite a me nā silicon carbide me nā ʻāpana like ʻole e like me ka uhi SiC, ka uhi TaC, ka uhi kalapona aniani, ka uhi kalapona pyrolytic, a me nā mea ʻē aʻe, hiki ke hāʻawi i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic.
Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.
Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.
Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!