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Gabatarwa ga Semiconductor GaN na ƙarni na uku da fasahar epitaxial mai alaƙa
by admin on 24-06-25
1. Semiconductor na ƙarni na uku An ƙirƙira fasahar semiconductor na ƙarni na farko bisa kayan aikin semiconductor kamar Si da Ge. Ita ce tushen kayan aiki don haɓaka transistor da fasahar kewayawa. Na farko-ƙarni semiconductor kayan aza f...
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Nazarin kwaikwaiyo na lamba akan tasirin graphite mai ƙyalƙyali akan ci gaban siliki carbide crystal
by admin on 24-06-18
Ainihin tsari na SiC crystal girma ya kasu kashi sublimation da bazuwar albarkatun kasa a babban zafin jiki, sufuri na gas lokaci abubuwa a karkashin mataki na zafin jiki gradient, da recrystallization girma na gas lokaci abubuwa a iri crystal. A kan haka ne...
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Nau'in Zane na Musamman
by admin on 24-06-17
Grafite na musamman shine babban tsabta, babban yawa da ƙarfin kayan aikin graphite kuma yana da kyakkyawan juriya na lalata, kwanciyar hankali mai zafi da babban ƙarfin lantarki. An yi shi da graphite na halitta ko na wucin gadi bayan maganin zafi mai zafi da sarrafa matsa lamba ...
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Analysis na bakin ciki jigon kayan aikin fim - ka'idoji da aikace-aikacen kayan aikin PECVD / LPCVD / ALD
by admin on 24-06-12
Jigon fim ɗin bakin ciki shine a lulluɓin fim ɗin a kan babban kayan da ke cikin na'ura mai kwakwalwa. Ana iya yin wannan fim da abubuwa daban-daban, irin su insulating compound silicon dioxide, semiconductor polysilicon, karfe jan karfe, da dai sauransu. Kayan aikin da ake amfani da shi don shafa ana kiransa jigon fim ɗin bakin ciki ...
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Muhimman abubuwa waɗanda ke ƙayyade ingancin ci gaban silicon monocrystalline - filin thermal
by admin on 24-06-12
Tsarin ci gaban silicon monocrystalline ana aiwatar da shi gaba ɗaya a cikin filin thermal. Kyakkyawan filin thermal yana da kyau don inganta ingancin lu'ulu'u kuma yana da inganci mafi girma. Zane na filin thermal yana ƙayyade canje-canje a cikin gradients zafin jiki ...
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Menene matsalolin fasaha na siliki carbide crystal girma makera?
by admin a ranar 24-06-07
Murfin girma na kristal shine ainihin kayan aiki don haɓakar kristal silicon carbide. Yana kama da tanderun girma na siliki na gargajiya na crystalline. Tsarin tanderun ba shi da wahala sosai. An yafi hada da tanderun jiki, dumama tsarin, nada watsa inji ...
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Menene lahani na silicon carbide epitaxial Layer
by admin on 24-06-05
Babban fasaha don haɓaka kayan aikin SiC epitaxial shine farkon fasahar sarrafa lahani, musamman don fasahar sarrafa lahani wanda ke da haɗari ga gazawar na'urar ko lalata amincin. Nazarin tsarin lahani na substrate da ke shiga cikin epi ...
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Oxidized hatsi a tsaye da fasahar haɓaka epitaxial-Ⅱ
by admin on 24-05-30
3. Epitaxial bakin ciki fim girma The substrate samar da jiki goyon bayan Layer ko conductive Layer ga Ga2O3 ikon na'urorin. Muhimmin Layer na gaba shine layin tashar tashar ko Layer epitaxial da ake amfani da shi don juriya da jigilar jigilar kaya. Don ƙara fashewar wutar lantarki da kuma rage yawan aiki ...
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Gallium oxide crystal guda ɗaya da fasahar haɓaka epitaxial
by admin on 24-05-30
Wide bandgap (WBG) semiconductor wanda silicon carbide (SiC) da gallium nitride (GaN) ke wakilta sun sami kulawa sosai. Mutane suna da babban tsammanin neman aikace-aikacen siliki carbide a cikin motocin lantarki da grid na wutar lantarki, da kuma fatan aikace-aikacen gallium ...
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