Menene tsarin BCD?
Tsarin BCD fasaha ne mai haɗaɗɗiyar guntu guda ɗaya wanda ST ya fara gabatar da shi a cikin 1986. Wannan fasaha na iya yin na'urorin bipolar, CMOS da DMOS akan guntu ɗaya. Bayyanar sa yana rage girman yankin guntu.
Ana iya cewa tsarin BCD yana amfani da fa'idodin ƙarfin tuƙi na Bipolar, babban haɗin kai na CMOS da ƙarancin amfani da wutar lantarki, da babban ƙarfin lantarki na DMOS da babban ƙarfin kwarara na yanzu. Daga cikin su, DMOS shine mabuɗin don inganta iko da haɗin kai. Tare da ci gaba da haɓaka fasahar haɗin kai, tsarin BCD ya zama fasahar masana'anta na PMIC.
Tsarin tsarin BCD giciye zane-zane, cibiyar sadarwar tushen, na gode
Amfanin tsarin BCD
Tsarin BCD yana sanya na'urorin Bipolar, na'urorin CMOS, da na'urorin wutar lantarki na DMOS akan guntu guda ɗaya a lokaci guda, haɗa babban juzu'i da ƙarfin tuki mai ƙarfi na na'urorin bipolar da babban haɗin kai da ƙarancin wutar lantarki na CMOS, ta yadda zasu iya dacewa. juna da ba da cikakken wasa ga fa'idodinsu; a lokaci guda, DMOS na iya aiki a yanayin sauyawa tare da ƙarancin wutar lantarki. A taƙaice, ƙarancin amfani da wutar lantarki, ingantaccen ƙarfin kuzari da haɗin kai na ɗaya daga cikin manyan fa'idodin BCD. Tsarin BCD na iya rage yawan amfani da wutar lantarki, inganta aikin tsarin kuma yana da ingantaccen aminci. Ayyukan samfuran lantarki suna ƙaruwa kowace rana, kuma buƙatun don canjin wutar lantarki, kariyar capacitor da haɓaka rayuwar baturi suna ƙara zama mahimmanci. Halayen haɓakar sauri da ƙarfin makamashi na BCD sun cika ka'idodin tsari don babban aiki na analog / guntun sarrafa wutar lantarki.
Mabuɗin fasaha na tsarin BCD
Na'urori na yau da kullun na tsarin BCD sun haɗa da CMOS masu ƙarancin ƙarfin lantarki, manyan bututun MOS masu ƙarfin lantarki, LDMOS tare da nau'ikan fashewa daban-daban, madaidaiciyar NPN/PNP da Schottky diodes, da sauransu. na'urori a cikin tsarin BCD. Sabili da haka, ban da la'akari da dacewa da na'urori masu ƙarfin lantarki da ƙananan na'urori masu amfani da wutar lantarki, matakai guda biyu da tsarin CMOS, da dai sauransu a cikin zane, dole ne a yi la'akari da fasahar keɓe masu dacewa.
A cikin fasahar keɓewar BCD, fasahohi da yawa kamar keɓewar haɗin gwiwa, keɓe kai da keɓancewar wutar lantarki sun bayyana ɗaya bayan ɗaya. Fasaha keɓewar haɗin gwiwa ita ce sanya na'urar akan nau'in nau'in epitaxial na nau'in nau'in nau'in P kuma a yi amfani da halayen bias na junction na PN don cimma warewa, saboda haɗin PN yana da tsayin daka sosai a ƙarƙashin bias.
Fasahar keɓe kai ita ce keɓantawar haɗin kai ta PN, wanda ya dogara da halayen haɗin PN na halitta tsakanin tushen da magudanar ruwa na na'urar da magudanar ruwa don cimma warewa. Lokacin da aka kunna bututun MOS, yankin tushen, yankin magudanar ruwa da tashoshi suna kewaye da yanki mai lalacewa, keɓance keɓancewa daga ƙasa. Lokacin da aka kashe shi, hanyar haɗin PN tsakanin yankin magudanar ruwa da magudanar ruwa yana jujjuya son rai, kuma babban ƙarfin wutar lantarki na yankin tushen ya keɓe ta yankin raguwa.
Warewa Dielectric yana amfani da kafofin watsa labarai masu rufewa kamar silicon oxide don cimma warewa. Dangane da keɓewar dielectric da keɓewar haɗin gwiwa, keɓancewar nau'in-dielectric an haɓaka ta hanyar haɗa fa'idodin duka biyun. Ta hanyar zaɓin ɗaukar fasahar keɓewar da ke sama, za a iya samun daidaituwar babban ƙarfin lantarki da ƙarancin ƙarfin lantarki.
Hanyar ci gaba na tsarin BCD
Haɓaka fasahar aiwatar da BCD ba kamar daidaitaccen tsari na CMOS ba ne, wanda koyaushe yana bin dokar Moore don haɓakawa ta hanyar ƙaramin faɗin layi da saurin sauri. Tsarin BCD ya bambanta kuma an haɓaka shi ta hanyoyi uku: babban ƙarfin lantarki, babban ƙarfi, da babban yawa.
1. High-voltage BCD shugabanci
Babban ƙarfin wutar lantarki na BCD na iya kera manyan da'irori masu sarrafa ƙarancin wutar lantarki mai dogaro da ƙarfi da DMOS-matakin da'irori mai ƙarfi akan guntu ɗaya a lokaci guda, kuma yana iya gane samar da na'urori masu ƙarfi na 500-700V. Duk da haka, gaba ɗaya, BCD har yanzu yana dacewa da samfurori tare da ƙananan buƙatun don na'urorin wuta, musamman BJT ko na'urorin DMOS masu girma na yanzu, kuma ana iya amfani da su don sarrafa wutar lantarki a cikin hasken lantarki da aikace-aikacen masana'antu.
Fasahar zamani don kera babban ƙarfin lantarki BCD shine fasahar RESURF ta Appel et al. a shekarar 1979. An yi na’urar ne ta hanyar amfani da wani Layer na epitaxial mai ɗorewa mai sauƙi don sanya yanayin rarraba wutar lantarki a saman, ta yadda za a inganta yanayin lalacewa, ta yadda lalacewa ta faru a cikin jiki maimakon saman, ta haka ne ya kara ƙarfin rushewar na'urar. Hasken doping wata hanya ce don ƙara raguwar ƙarfin lantarki na BCD. Yana amfani da magudanar ruwa mai yaduwa sau biyu DDD (Doping Drain sau biyu) da magudanar ruwa mai sauƙi LDD (Drain Doping mai sauƙi). A cikin yankin magudanar ruwa na DMOS, an ƙara wani yanki mai drift nau'in N don canza asalin tuntuɓar tsakanin magudanar N+ da nau'in nau'in nau'in P zuwa lamba tsakanin magudanar N- drain da nau'in nau'in nau'in nau'in P, don haka yana haɓaka ƙarfin lalacewa.
2. Babban iko BCD shugabanci
Matsakaicin ƙarfin wutar lantarki na BCD mai ƙarfi shine 40-90V, kuma ana amfani dashi galibi a cikin kayan lantarki na kera da ke buƙatar babban ƙarfin tuƙi na yanzu, matsakaicin ƙarfin lantarki da da'irori masu sauƙi. Halayen buƙatunsa sune babban ƙarfin tuƙi na yanzu, matsakaicin ƙarfin lantarki, kuma da'irar sarrafawa sau da yawa yana da sauƙi.
3. Jagoran BCD mai girma
BCD mai girma, kewayon ƙarfin lantarki shine 5-50V, kuma wasu na'urorin lantarki na mota zasu kai 70V. Ana iya haɗa ƙarin hadaddun da ayyuka daban-daban akan guntu ɗaya. BCD mai girma yana ɗaukar wasu ra'ayoyin ƙira na yau da kullun don cimma nau'ikan samfura, galibi ana amfani da su a aikace-aikacen lantarki na kera motoci.
Babban aikace-aikace na tsarin BCD
Ana amfani da tsarin BCD sosai a cikin sarrafa wutar lantarki (ikon wutar lantarki da sarrafa baturi), tukin nuni, kayan lantarki na kera motoci, sarrafa masana'antu, da dai sauransu. Guntun sarrafa wutar lantarki (PMIC) yana ɗaya daga cikin mahimman nau'ikan kwakwalwan kwamfuta na analog. Haɗin tsarin BCD da fasahar SOI kuma babban siffa ce ta haɓaka tsarin BCD.
VET-China na iya samar da sassan graphite, ji mai laushi, sassan siliki carbide, sassan silica carbide cvD, da sic/Tac mai rufi tare da cikin kwanaki 30.
Idan kuna sha'awar samfuran semiconductor na sama, don Allah kar a yi shakka a tuntuɓe mu a karon farko.
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Lokacin aikawa: Satumba-18-2024