I-GaN ku-Silicon Wafer ye-RF

Incazelo emfushane:

I-GaN ku-Silicon Wafer ye-RF, ehlinzekwa yi-VET Energy, iklanyelwe ukusekela izinhlelo zokusebenza zefrikhwensi yomsakazo we-high-frequency (RF). Lawa mawafa ahlanganisa izinzuzo ze-Gallium Nitride (GaN) kanye ne-Silicon (Si) ukuze anikeze ukuqhutshwa kwe-thermal okuhle kakhulu nokusebenza kahle kwamandla aphezulu, okuwenza alungele izingxenye ze-RF ezisetshenziswa kwezokuxhumana, i-radar, nezinhlelo zesathelayithi. I-VET Energy iqinisekisa ukuthi iwafa ngayinye ihlangabezana namazinga aphezulu okusebenza adingekayo ekwenziweni kwe-semiconductor ethuthukisiwe.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-VET Energy GaN ku-Silicon Wafer iyisixazululo esisezingeni eliphezulu se-semiconductor esiklanyelwe ngqo izinhlelo zokusebenza zomsakazo (RF). Ngokukhula nge-epitaxially i-gallium nitride yezinga eliphezulu (i-GaN) yekhwalithi ephezulu ku-silicon substrate, i-VET Energy iletha inkundla engabizi kakhulu nesebenza kahle kakhulu yezinhlobonhlobo zamadivayisi e-RF.

Le GaN ku-Silicon wafer iyahambisana nezinye izinto ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate, inweba ukusebenzisa kwayo izinto ezihlukahlukene ezinqubweni ezihlukahlukene zokwenziwa. Ukwengeza, ilungiselelwe ukusetshenziswa ne-Epi Wafer nezinto ezithuthukisiwe ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer, ethuthukisa futhi izinhlelo zayo zokusebenza ku-electronics enamandla amakhulu. Amawafa enzelwe ukuhlanganiswa okungenamthungo ezinhlelweni zokukhiqiza kusetshenziswa ukuphatha Amakhasethi okujwayelekile ukuze kube lula ukusetshenziswa kanye nokwandisa ukusebenza kahle kokukhiqiza.

I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.

I-GaN ku-Silicon Wafer inikeza izinzuzo ezimbalwa zezicelo ze-RF:

       • Ukusebenza kwemvamisa ephezulu:Ibhendi ebanzi ye-GaN kanye nokuhamba kwama-electron aphezulu kunika amandla ukusebenza kwemvamisa ephezulu, okuyenza ilungele i-5G nezinye izinhlelo zokuxhumana ezinesivinini esikhulu.
     • Ukuminyana kwamandla okuphezulu:Amadivayisi e-GaN angakwazi ukuphatha ukuminyana kwamandla okuphezulu uma kuqhathaniswa namadivayisi endabuko asekelwe ku-silicon, okuholela ezinhlelweni ze-RF ezihlangene futhi ezisebenza kahle.
       • Ukusetshenziswa kwamandla okuphansi:Amadivayisi e-GaN abonisa ukusetshenziswa kwamandla okuphansi, okuholela ekusebenzeni okuthuthukisiwe kwamandla kanye nokunciphisa ukuchithwa kokushisa.

Izicelo:

       • Ukuxhumana okungenantambo kwe-5G:I-GaN kuma-wafers e-Silicon ibalulekile ekwakheni iziteshi ezisezingeni eliphezulu ze-5G namadivayisi eselula.
     • Amasistimu erada:Ama-amplifiers e-RF asuselwa ku-GaN asetshenziswa ezinhlelweni ze-radar ngokusebenza kahle kwawo okuphezulu kanye nomkhawulokudonsa obanzi.
   • Ukuxhumana ngesathelayithi:Amadivayisi e-GaN anika amandla amasistimu okuxhumana ngesathelayithi anamandla aphezulu kanye namaza aphezulu.
     • I-Military electronics:Izingxenye ze-RF ezisekelwe ku-GaN zisetshenziswa ezinhlelweni zezempi njenge-electronic warfare namasistimu e-radar.

I-VET Energy inikezela nge-GaN eyenzeka ngokwezifiso kuma-wafer e-Silicon ukuze ihlangabezane nezidingo zakho ezithile, okuhlanganisa amazinga ahlukene e-doping, ubukhulu, namasayizi ama-wafer. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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