I-VET Energy GaN ku-Silicon Wafer iyisixazululo esisezingeni eliphezulu se-semiconductor esiklanyelwe ngqo izinhlelo zokusebenza zomsakazo (RF). Ngokukhula nge-epitaxially i-gallium nitride yezinga eliphezulu (i-GaN) yekhwalithi ephezulu ku-silicon substrate, i-VET Energy iletha inkundla engabizi kakhulu nesebenza kahle kakhulu yezinhlobonhlobo zamadivayisi e-RF.
Le GaN ku-Silicon wafer iyahambisana nezinye izinto ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate, inweba ukusebenzisa kwayo izinto ezihlukahlukene ezinqubweni ezihlukahlukene zokwenziwa. Ukwengeza, ilungiselelwe ukusetshenziswa ne-Epi Wafer nezinto ezithuthukisiwe ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer, ethuthukisa futhi izinhlelo zayo zokusebenza ku-electronics enamandla amakhulu. Amawafa enzelwe ukuhlanganiswa okungenamthungo ezinhlelweni zokukhiqiza kusetshenziswa ukuphatha Amakhasethi okujwayelekile ukuze kube lula ukusetshenziswa kanye nokwandisa ukusebenza kahle kokukhiqiza.
I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.
I-GaN ku-Silicon Wafer inikeza izinzuzo ezimbalwa zezicelo ze-RF:
• Ukusebenza kwemvamisa ephezulu:Ibhendi ebanzi ye-GaN kanye nokuhamba kwama-electron aphezulu kunika amandla ukusebenza kwemvamisa ephezulu, okuyenza ilungele i-5G nezinye izinhlelo zokuxhumana ezinesivinini esikhulu.
• Ukuminyana kwamandla okuphezulu:Amadivayisi e-GaN angakwazi ukuphatha ukuminyana kwamandla okuphezulu uma kuqhathaniswa namadivayisi endabuko asekelwe ku-silicon, okuholela ezinhlelweni ze-RF ezihlangene futhi ezisebenza kahle.
• Ukusetshenziswa kwamandla okuphansi:Amadivayisi e-GaN abonisa ukusetshenziswa kwamandla okuphansi, okuholela ekusebenzeni okuthuthukisiwe kwamandla kanye nokunciphisa ukuchithwa kokushisa.
Izicelo:
• Ukuxhumana okungenantambo kwe-5G:I-GaN kuma-wafers e-Silicon ibalulekile ekwakheni iziteshi eziyisisekelo ze-5G ezisebenza kahle kakhulu namadivayisi eselula.
• Amasistimu erada:Ama-amplifiers e-RF asuselwa ku-GaN asetshenziswa ezinhlelweni ze-radar ngokusebenza kahle kwawo okuphezulu kanye nomkhawulokudonsa obanzi.
• Ukuxhumana ngesathelayithi:Amadivayisi e-GaN anika amandla amasistimu okuxhumana ngesathelayithi anamandla aphezulu kanye namaza aphezulu.
• I-Military electronics:Izingxenye ze-RF ezisekelwe ku-GaN zisetshenziswa ezinhlelweni zezempi ezifana ne-electronic warfare namasistimu e-radar.
I-VET Energy inikezela nge-GaN eyenzeka ngokwezifiso kuma-wafer e-Silicon ukuze ihlangabezane nezidingo zakho ezithile, okuhlanganisa amazinga ahlukene e-doping, ubukhulu, namasayizi ama-wafer. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |