I-Silicon Wafer engu-12 inch yeSemiconductor Fabrication ehlinzekwa yi-VET Energy yakhiwe ukuze ihlangabezane namazinga anembayo adingekayo embonini ye-semiconductor. Njengomunye wemikhiqizo ehamba phambili ohlwini lwethu, i-VET Energy iqinisekisa ukuthi lawa mawafa akhiqizwa ngendlela eqondile, ehlanzekile, nekhwalithi ephezulu, okuwenza alungele izinhlelo zokusebenza ze-semiconductor ezisezingeni eliphezulu, okuhlanganisa ama-microchips, izinzwa, kanye nemishini kagesi ethuthukisiwe.
Lesi silucwecwana sihambisana nezinhlobonhlobo zezinto ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, ne-Epi Wafer, ehlinzeka ngokuguquguquka okuhle kakhulu kwezinqubo ezahlukahlukene zokwenziwa. Ukwengeza, ihambisana kahle nobuchwepheshe obuthuthukile obufana ne-Gallium Oxide Ga2O3 ne-AlN Wafer, iqinisekisa ukuthi ingahlanganiswa nezinhlelo zokusebenza ezikhethekile kakhulu. Ukuze isebenze kahle, iwafa ilungiselelwe ukusetshenziswa nezinhlelo zekhasethi ezisezingeni lomkhakha, okuqinisekisa ukuphathwa kahle ekukhiqizeni ama-semiconductor.
Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.
Izindawo zokufaka isicelo:
•Ama-logic chips:Ukwenziwa kwama-chips anengqondo asebenza kahle njenge-CPU ne-GPU.
•Inkumbulo chips:Ukwenziwa kwama-memory chips afana ne-DRAM ne-NAND Flash.
•Ama-analog chips:Ukwenziwa kwama-analog chips afana ne-ADC ne-DAC.
•Izinzwa:Izinzwa ze-MEMS, izinzwa zesithombe, njll.
I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer, futhi ingenza ngendlela oyifisayo ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo okuhlukile, ukujiya okuhlukile nokunye ukucaciswa ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe okuqeqeshiwe kanye nesevisi yangemuva kokuthengisa ukusiza amakhasimende athuthukise izinqubo zokukhiqiza futhi athuthukise isivuno somkhiqizo.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |