I-Silicon Wafer engu-12 intshi ye-Semiconductor Fabrication

Incazelo emfushane:

I-VET Energy 12-intshi yama-silicon wafers ayizinto eziyisisekelo zomkhakha wokukhiqiza we-semiconductor. I-VET Energy isebenzisa ubuchwepheshe obuthuthukisiwe bokukhula kwe-CZ ukuze kuqinisekiswe ukuthi amawafa anekhwalithi enhle kakhulu yekristalu, ukuminyana okunesici esiphansi nokufana okuphezulu, okuhlinzeka ngendawo engaphansi eqinile nethembekile yamadivayisi akho e-semiconductor.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon Wafer engu-12 inch yeSemiconductor Fabrication ehlinzekwa yi-VET Energy yakhiwe ukuze ihlangabezane namazinga anembayo adingekayo embonini ye-semiconductor. Njengomunye wemikhiqizo ehamba phambili ohlwini lwethu, i-VET Energy iqinisekisa ukuthi lawa mawafa akhiqizwa ngendlela eqondile, ehlanzekile, nekhwalithi ephezulu, okuwenza alungele izinhlelo zokusebenza ze-semiconductor ezisezingeni eliphezulu, okuhlanganisa ama-microchips, izinzwa, kanye nemishini kagesi ethuthukisiwe.

Lesi silucwecwana sihambisana nezinhlobonhlobo zezinto ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, ne-Epi Wafer, ehlinzeka ngokuguquguquka okuhle kakhulu kwezinqubo ezahlukahlukene zokwenziwa. Ukwengeza, ihambisana kahle nobuchwepheshe obuthuthukile obufana ne-Gallium Oxide Ga2O3 ne-AlN Wafer, iqinisekisa ukuthi ingahlanganiswa nezinhlelo zokusebenza ezikhethekile kakhulu. Ukuze isebenze kahle, iwafa ilungiselelwe ukusetshenziswa nezinhlelo zekhasethi ezisezingeni lomkhakha, okuqinisekisa ukuphathwa kahle ekukhiqizeni ama-semiconductor.

Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.

Izindawo zokufaka isicelo:
Ama-logic chips:Ukwenziwa kwama-chips anengqondo asebenza kahle njenge-CPU ne-GPU.
Inkumbulo chips:Ukwenziwa kwama-memory chips afana ne-DRAM ne-NAND Flash.
Ama-analog chips:Ukwenziwa kwama-analog chips afana ne-ADC ne-DAC.
Izinzwa:Izinzwa ze-MEMS, izinzwa zesithombe, njll.

I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer, futhi ingenza ngendlela oyifisayo ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo okuhlukile, ukujiya okuhlukile nokunye ukucaciswa ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe okuqeqeshiwe kanye nesevisi yangemuva kokuthengisa ukusiza amakhasimende athuthukise izinqubo zokukhiqiza futhi athuthukise isivuno somkhiqizo.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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