I-6 Inch Semi Insulating SiC Wafer evela ku-VET Energy iyisixazululo esithuthukisiwe samandla aphezulu kanye nezicelo zamafrikhwensi aphezulu, enikeza ukuguquguquka okuphakeme okushisayo kanye nokufakwa kukagesi. Lawa mawafa avikela kancane abalulekile ekuthuthukisweni kwamadivayisi anjengama-amplifiers e-RF, amaswishi kagesi, nezinye izingxenye zamandla kagesi aphezulu. I-VET Energy iqinisekisa ikhwalithi nokusebenza okungaguquki, okwenza lawa mawafa alungele uhla olubanzi lwezinqubo zokwenziwa kwe-semiconductor.
Ngaphezu kwezakhiwo zabo ezivelele zokuvikela, lawa mawafa e-SiC ahambisana nezinhlobonhlobo zezinto ezihlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, ne-Epi Wafer, ezenza zisebenziseke ngezindlela ezihlukahlukene ezinhlotsheni ezahlukene zezinqubo zokukhiqiza. Ngaphezu kwalokho, izinto ezithuthukisiwe ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer zingasetshenziswa ngokuhlanganiswa nalawa mawafa e-SiC, anikeze ukuguquguquka okukhulu nakakhulu kumadivayisi kagesi anamandla amakhulu. Amawafa enzelwe ukuhlanganiswa okungenamthungo nezinhlelo zokubamba ezisezingeni lomkhakha njengezinhlelo ze-Cassette, eziqinisekisa ukusetshenziswa kalula kuzilungiselelo zokukhiqiza ngobuningi.
I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.
6 intshi semi-insulating SiC wafer inikeza izinzuzo ezimbalwa:
I-voltage ephezulu yokuphuka: I-bandgap ebanzi ye-SiC inika amandla ama-voltage okuphuka aphezulu, okuvumela amadivayisi ahlangene futhi asebenza kahle kakhudlwana.
Ukusebenza kwezinga lokushisa eliphezulu: I-SiC's conductivity enhle kakhulu ye-thermal yenza ukusebenza emazingeni okushisa aphezulu, ithuthukise ukwethembeka kwedivayisi.
Ukumelana okuphansi: Amadivayisi e-SiC abonisa ukumelana okuphansi, ehlisa ukulahleka kwamandla kanye nokwenza ngcono ukusebenza kahle kwamandla.
I-VET Energy inikeza amawafa e-SiC enziwe ngokwezifiso ukuze ahlangabezane nezidingo zakho ezithile, okuhlanganisa ukujiya okuhlukahlukene, amazinga e-doping, nokuqedwa kwendawo. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |