6 Intshi Semi Insulating SiC Wafer

Incazelo emfushane:

I-VET Energy 6 inch semi-insulating silicon carbide (SiC) wafer iyi-substrate yekhwalithi ephezulu elungele uhla olubanzi lwezinhlelo zokusebenza zamandla kagesi. I-VET Energy isebenzisa amasu okukhula athuthukisiwe ukuze ikhiqize amawafa e-SiC anekhwalithi eyingqayizivele yekristalu, ukuminyana okunesici esiphansi, kanye nokumelana okuphezulu.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-6 Inch Semi Insulating SiC Wafer evela ku-VET Energy iyisixazululo esithuthukisiwe samandla aphezulu kanye nezicelo zamafrikhwensi aphezulu, enikeza ukuguquguquka okuphakeme okushisayo kanye nokufakwa kukagesi. Lawa mawafa avikela kancane abalulekile ekuthuthukisweni kwamadivayisi anjengama-amplifiers e-RF, amaswishi kagesi, nezinye izingxenye zamandla kagesi aphezulu. I-VET Energy iqinisekisa ikhwalithi nokusebenza okungaguquki, okwenza lawa mawafa alungele uhla olubanzi lwezinqubo zokwenziwa kwe-semiconductor.

Ngaphezu kwezakhiwo zabo ezivelele zokuvikela, lawa mawafa e-SiC ahambisana nezinhlobonhlobo zezinto ezihlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, ne-Epi Wafer, ezenza zisebenziseke ngezindlela ezihlukahlukene ezinhlotsheni ezahlukene zezinqubo zokukhiqiza. Ngaphezu kwalokho, izinto ezithuthukisiwe ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer zingasetshenziswa ngokuhlanganiswa nalawa mawafa e-SiC, anikeze ukuguquguquka okukhulu nakakhulu kumadivayisi kagesi anamandla amakhulu. Amawafa enzelwe ukuhlanganiswa okungenamthungo nezinhlelo zokubamba ezisezingeni lomkhakha njengezinhlelo ze-Cassette, eziqinisekisa ukusetshenziswa kalula kuzilungiselelo zokukhiqiza ngobuningi.

I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.

6 intshi semi-insulating SiC wafer inikeza izinzuzo ezimbalwa:
I-voltage ephezulu yokuphuka: I-bandgap ebanzi ye-SiC inika amandla ama-voltage okuphuka aphezulu, okuvumela amadivayisi ahlangene futhi asebenza kahle kakhudlwana.
Ukusebenza kwezinga lokushisa eliphezulu: I-SiC's conductivity enhle kakhulu ye-thermal yenza ukusebenza emazingeni okushisa aphezulu, ithuthukise ukwethembeka kwedivayisi.
Ukumelana okuphansi: Amadivayisi e-SiC abonisa ukumelana okuphansi, ehlisa ukulahleka kwamandla kanye nokwenza ngcono ukusebenza kahle kwamandla.

I-VET Energy inikeza amawafa e-SiC enziwe ngokwezifiso ukuze ahlangabezane nezidingo zakho ezithile, okuhlanganisa ukujiya okuhlukahlukene, amazinga e-doping, nokuqedwa kwendawo. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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