Izakhiwo ze-silicon carbide eyenziwe kabusha
I-recrystallized silicon carbide (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni okwesibili kunedayimane, eyakhiwe ezingeni lokushisa eliphezulu elingaphezu kuka-2000 ℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okuqinile, ukumelana ne-oxidation okuhle kakhulu, ukumelana nokushaqeka okuhle kokushisayo nokunye.
● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide eyenziwe kabusha inamandla aphakeme nokuqina kune-carbon fibre, ukumelana nomthelela omkhulu, ingadlala ukusebenza kahle ezindaweni ezishisa kakhulu zokushisa, ingadlala ukusebenza okungcono kokumelana nezimo ezihlukahlukene. Ngaphezu kwalokho, ibuye ibe nokuguquguquka okuhle futhi ayilimazi kalula ukwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.
● Ukumelana nokugqwala okuphezulu. I-silicon carbide eyenziwe kabusha inokumelana nokugqwala okuphezulu emithonjeni ehlukahlukene, ingavimbela ukuguguleka kwemithombo yezindaba egqwalayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nempilo ende yenkonzo. Ngaphezu kwalokho, ibuye ibe nokuzinza okuhle kokushisa, ingakwazi ukuzivumelanisa nohlu oluthile lwezinguquko zokushisa, ithuthukise umphumela wayo wokufaka isicelo.
● I-Sintering ayinciphi. Ngenxa yokuthi inqubo ye-sintering ayinciphisi, akukho ukucindezeleka okuyinsalela okuzobangela ukuwohloka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinobunjwa obuyinkimbinkimbi nokunemba okuphezulu zingalungiswa.
| 重结晶碳化硅物理特性 Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 使用温度/ Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
| I-SiC含量/ Okuqukethwe kwe-SiC | > 99.96% |
| 自由Si含量/ Mahhala Si okuqukethwe | < 0.1% |
| 体积密度/Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
| 气孔率/ I-porosity ebonakalayo | < 16% |
| 抗压强度/ Amandla okucindezela | > 600I-MPa |
| 常温抗弯强度/Amandla okugoba abandayo | 80-90 MPa (20°C) |
| 高温抗弯强度Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
| 热膨胀系数/ Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
| 导热系数/I-Thermal conductivity @1200°C | 23W/m•K |
| 杨氏模量/ Imoduli ye-elastic | 240 GPA |
| 抗热震性/ Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |
I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, linganikeza izixazululo zempahla echwepheshilekwakho.
Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo seCrystal | I-FCC β isigaba多晶，主要為（111）取向 |
| 密度 / Ukuminyana | 3.21 g/cm³ |
| 硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Uhlamvu SiZe | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / I-Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Amandla Aguquguqukayo | 415 MPa RT 4-iphoyinti |
| 杨氏模量 / I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| 导热系数 / ThermalI-Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Ukwandiswa Kokushisa (CTE) | 4.5×10-6K-1 |
Siyakwamukela ngokufudumele ukuthi uvakashele ifekthri yethu, ake sibe nengxoxo eyengeziwe!
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