Matla a VETSilicon Carbide Coating Graphite Tray, Plate, le Cover e etselitsoe ho fana ka ts'ebetso ea boemo bo holimo, e fana ka ts'ebetso e ts'epahalang le e ts'oanang ho feta ts'ebeliso e telele, e etsa khetho ea bohlokoa bakeng sa lits'ebetso tsa ts'ebetso ea li-wafer indastering ea semiconductor. Ts'ebetso ena e phahamengSilicon Carbide Coating Graphite Platee ithorisa ka mokhoa o ikhethang oa ho hanyetsa mocheso, ho tšoana ho holimo ha mocheso, le botsitso bo ikhethang ba lik'hemik'hale, haholo-holo maemong a phahameng a mocheso. Kaho ea eona e hloekileng haholo, hammoho le khanyetso e tsoetseng pele ea khoholeho, e etsa hore e be ea bohlokoa haholo bakeng sa maemo a boima joalo kaLi-susceptors tsa MOCVD.
Lintlha tsa Bohlokoa tsa Silicon Carbide Coating Graphite Tray, Plate, le Sekoahelo
1. Ho hanyetsana le Oxidation ea Mocheso o Phahameng:E mamella mocheso ho fihla ho 1700 ℃, e e nolofalletsa ho sebetsa ka ts'epo maemong a feteletseng.
2. Bohloeki bo Phahameng le ho Kopana ha Thermal:Bohloeki bo phahameng bo tsitsitseng esita le kabo ea mocheso ke ea bohlokoa bakeng sa lits'ebetso tsa MOCVD.
3. Ho hanyetsa ha Corrosion e Ikhethileng:E hanana le li-acids, alkalis, matsoai, le li-reagents tse fapaneng tsa tlhaho, tse netefatsang botsitso ba nako e telele libakeng tse fapaneng.
4. Boemo bo thata bo phahameng le bo Compact:E na le sebaka se teteaneng se nang le likaroloana tse ntle, ho ntlafatsa ho tšoarella ka kakaretso le ho hanyetsa ho apara.
5. Bophelo bo Atolositsoeng ba Tšebeletso:E etselitsoe ho phela nako e telele, e sebetsa ho feta e tloaelehilengli-susceptors tsa graphite tse koahetsoeng ka silicon carbidelibakeng tse thata tsa ho sebetsana le semiconductor.
CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala | |
性质 / Thepa | 典型数值 / Boleng bo Tlwaelehileng |
晶体结构 / Sebopeho sa Crystal | FCC mohato oa β多晶,主要為(111)取向 |
密度 / Ho teteana | 3.21 g/cm³ |
硬度 / Ho thatafala | 2500 维氏硬度 (moroalo oa 500g) |
晶粒大小 / Mabele SiZe | 2 ~ 10μm |
纯度 / Bohloeki ba lik'hemik'hale | 99.99995% |
热容 / Bokhoni ba mocheso | 640 J·kg-1·K-1 |
升华温度 / Sublimation Mocheso | 2700 ℃ |
抗弯强度 / Flexural Matla | 415 MPa RT 4-ntlha |
杨氏模量 / Young's Modulus | 430 Gpa 4pt kobeha, 1300 ℃ |
导热系数 / ThermalBoikhantšo | 300Wm-1·K-1 |
热膨胀系数 / Katoloso ea Mocheso(CTE) | 4.5×10-6K-1 |
Tsebo ea VET Energy ho Tharollo e Ikemetseng ea Graphite le Silicon Carbide
Joaloka moetsi ea tšeptjoang, VET Energy e sebetsa ka ho khetheha ho li-susceptors tsa graphite tse entsoeng ka tloaelo le litharollo tsa ho roala ka silicon carbide. Re fana ka lihlahisoa tse fapaneng tse etselitsoeng liindasteri tsa semiconductor le photovoltaic, ho kenyeletsoaLikarolo tsa graphite tse koahetsoeng ke SiCjoalo ka literei, lipoleiti le likoahelo. Lihlahisoa tsa rona tsa lihlahisoa li boetse li kenyelletsa likhetho tse fapaneng tsa ho roala, joalo kaHo roala SiC bakeng sa MOCVD, Ho roala ha TaC, ho roala ha khalase ea khabone, le pyrolytic carbon coating, ho netefatsa hore re finyella litlhoko tse sa tšoaneng tsa indasteri ea theknoloji e phahameng.
Sehlopha sa rona sa botekgeniki se nang le boiphihlelo, se nang le litsebi tse tsoang litsing tse phahameng tsa lipatlisiso tsa lapeng, se fana ka tharollo ea lisebelisoa bakeng sa bareki. Re tsoela pele ho ntlafatsa lits'ebetso tsa rona tse tsoetseng pele, ho kenyeletsoa theknoloji e khethehileng e nang le tokelo ea molao e matlafatsang maqhama pakeng tsa silicon carbide coating le graphite substrate, ho fokotsa kotsi ea ho arohana le ho lelefatsa bophelo ba sehlahisoa.
Likopo le Melemo ho Semiconductor Manufacturing
TheSilicon Carbide Coating bakeng sa MOCVDe etsa hore li-susceptors tsena tsa graphite li atlehe haholo maemong a mocheso o phahameng, a senyang. Ho sa tsotellehe hore na li sebelisoa e le lijari tsa graphite wafer kapa likarolo tse ling tsa MOCVD, li-susceptors tsena tse koahetsoeng ke silicon carbide li bontša ho tšoarella ho phahameng le ho sebetsa. Bakeng sa ba batlang litharollo tse tšepahalang hoSesebelisoa sa graphite se koahetsoeng ke SiC'maraka, terei ea silicon carbide-coated graphite ea VET Energy, poleiti le sekoaelo li fana ka khetho e matla le e fapaneng e fihlelang litlhoko tse matla tsa indasteri ea semiconductor.
Ka ho tsepamisa maikutlo ho mahlale a tsoetseng pele a thepa, VET Energy e ikemiselitse ho fana ka litharollo tsa graphite tse nang le ts'ebetso e phahameng ea SiC-coated tse tsamaisang boqapi ba ts'ebetso ea semiconductor le ho netefatsa ts'ebetso e tšepahalang lits'ebetsong tsohle tse amanang le MOCVD.
VET Energy ke moetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse nang le liphahlo tse fapaneng tse kang SiC coating, TaC coating, glassy coating, pyrolytic carbon coating, joalo-joalo, e ka fana ka likarolo tse fapaneng tse hlophisitsoeng bakeng sa indasteri ea semiconductor le photovoltaic.
Sehlopha sa rona sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka u fa litharollo tsa lisebelisoa tse eketsehileng bakeng sa hau.
Re ntse re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele, 'me re entse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama lipakeng tsa pente le substrate e tiee le hore e se ke ea oela habonolo.
Re u amohela ka mofuthu hore u etele feme ea rona, ha re buisaneng ka ho eketsehileng!