China Moetsi oa SiC Coated Graphite MOCVD Epitaxy Susceptor

China Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor Featured Image

Tlhaloso e Khutšoanyane:

Bohloeki <5ppm
‣ Tšebeliso e ntle ea doping
‣ Boima bo phahameng le ho khomarela
‣ Anti-corrosive e ntle le khanyetso ea khabone

‣ Boikemisetso ba litsebi
‣ Nako e khutšoanyane ea ho tsamaisa
‣ Phepelo e tsitsitseng
‣ Taolo ea boleng le ntlafatso e tsoelang pele

Epitaxy of GaN on Sapphire(RGB / Mini / Micro LED);
Epitaxy ea GaN ho Si Substrate(UVC);
Epitaxy ea GaN ho Si Substrate(Sesebediswa sa Elektronike);
Epitaxy ea Si ho Si Substrate(Potoloho e kopantsoeng);
Epitaxy ea SiC ho SiC Substrate(Substrate);
Epitaxy ea InP ho InP

Re romelle lengolo-tsoibila Khoasolla e le PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Boemo bo phahameng ba MOCVD Susceptor Reka inthaneteng China

Sephaphatha se hloka ho feta mehatong e mengata pele se se se loketse ho sebelisoa lisebelisoa tsa elektroniki. Mokhoa o mong oa bohlokoa ke silicon epitaxy, eo ho eona liphaphatha li tsamaisoang ka li-susceptors tsa graphite. Thepa le boleng ba li-susceptors li na le phello ea bohlokoa ho boleng ba epitaxial layer ea wafer.

Bakeng sa mekhahlelo e tšesaane ea ho beha lifilimi joalo ka epitaxy kapa MOCVD, VET e fana ka lisebelisoa tsa graphite tsa boleng bo holimo tse sebelisetsoang ho tšehetsa li-substrates kapa "wafers". Motheong oa ts'ebetso, lisebelisoa tsena, li-epitaxy susceptors kapa li-platform tsa sathelaete tsa MOCVD, li qala ho beoa tikolohong ea deposition:

Mocheso o phahameng.
Vacuum e phahameng.
Tšebeliso ea li-precursors tse matla tsa khase.
Tšilafalo ea Zero, ho ba sieo ha peeling.
Ho hanyetsa li-acid tse matla nakong ea ts'ebetso ea ho hloekisa

VET Energy ke moetsi oa 'nete oa lihlahisoa tse ikhethileng tsa graphite le silicon carbide tse koahetsoeng bakeng sa indasteri ea semiconductor le photovoltaic. Sehlopha sa rona sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka u fa litharollo tsa lisebelisoa tse eketsehileng bakeng sa hau.

Re ntse re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele, 'me re entse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama lipakeng tsa pente le substrate e tiee le hore e se ke ea oela habonolo.

Likarolo tsa lihlahisoa tsa rona:

1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700 ℃.
2. Bohloeki bo phahameng le ho tšoana ha mocheso
3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.
4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Boleng bo Tlwaelehileng
晶体结构 / Sebopeho sa Crystal	FCC mohato oa β多晶，主要為（111）取向
密度 / Ho teteana	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Mabele SiZe	2 ~ 10μm
纯度 / Bohloeki ba lik'hemik'hale	99.99995%
热容 / Bokhoni ba mocheso	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Matla	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / ThermalBoikhantšo	300Wm^-1·K^-1
热膨胀系数 / Katoloso ea Mocheso(CTE)	4.5×10^-6K^-1