CVD-SiCbarbotage na le litšobotsi tsa sebopeho junifomo, thepa diseke ee, phahameng mocheso ho hanyetsa, khanyetso oxidation, bohloeki phahameng, acid & alkali ho hanyetsa le reagent manyolo, le thepa e tsitsitseng 'meleng le lik'hemik'hale.

Ha ho bapisoa le lisebelisoa tse phahameng tsa graphite, graphite e qala ho oxidize ho 400C, e tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se bakang tšilafalo ea tikoloho ho lisebelisoa tsa peripheral le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng.

Leha ho le joalo, ho roala ha SiC ho ka boloka botsitso ba 'mele le lik'hemik'hale ka likhato tse 1600, E sebelisoa haholo indastering ea sejoale-joale, haholo indastering ea semiconductor.

Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho roala SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li sebetsane le mocheso o phahameng ho fumana limolek'hule tsa SiC tse hloekileng, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, ho etsa lera la tšireletso la SIC. SIC e entsoeng e tlamahane ka thata ho setsi sa graphite, e fana ka lisebelisoa tse khethehileng tsa graphite, kahoo e etsa hore bokaholimo ba graphite bo kopane, bo se ke ba e-ba le Porosity, ho hanyetsa mocheso o phahameng, ho hanyetsa kutu le ho hanyetsa oxidation.

Lintlha tse ka sehloohong:

1. Ho hanyetsa mocheso o phahameng oa oxidation:

khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho 1600 C.

2. Bohloeki bo phahameng: bo entsoeng ka ho kenngoa ha mouoane oa lik'hemik'hale tlas'a boemo bo phahameng ba mocheso oa chlorination.

3. Ho hanyetsa khoholeho ea mobu: boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.

4. Ho hanyetsa kutu: acid, alkali, letsoai le li-reagents tse phelang.

Lintlha tse ka sehloohong tsa CVD-SIC Coatings: