Vertical Column Wafer Boat & Pedestal

Tsanangudzo Pfupi:

Iyo Vertical Column Wafer Boat & Pedestal kubva kuvet-china inopa kugadzikana kwepamusoro uye iko kurongeka mukubata wafer yekugadzira semiconductor. Iine vet-china's advanced dhizaini, iyi sisitimu inovimbisa kurongeka kwakaringana uye kuchengetedzwa kwakachengeteka, inosimudzira kushanda zvakanaka uye kuderedza kukuvara kwewafer.

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vet-china inopa inogadziridza Vertical Column Wafer Boat & Pedestal, mhinduro yakazara yepamberi semiconductor kugadzirisa. Yakagadzirwa nekunyatso hunyanzvi, iyi wafer inobata sisitimu inopa kugadzikana kusingaenzaniswi uye kurongeka, kwakakosha kune yakakwirira-inoshanda nzvimbo dzekugadzira.

Iyo Vertical Column Wafer Boat & Pedestal inovakwa nezvinhu zveprimiyamu zvinovimbisa kugadzikana kwemafuta uye kuramba kune kemikari corrosion, zvichiita kuti ive yakakodzera kune inonyanya kudiwa semiconductor yekugadzira maitiro. Yayo yakasarudzika vertical column dhizaini inotsigira wafer zvakachengeteka, ichidzikisa njodzi yekusarongeka uye kukuvara kunogona kuitika panguva yekufambisa uye kugadzirisa.

Nekubatanidzwa kwevet-china's Vertical Column Wafer Boat & Pedestal, vagadziri ve semiconductor vanogona kutarisira kukwidziridzwa kwekupinda, kushomeka nguva, uye kuwedzera chigadzirwa goho. Iyi sisitimu inoenderana neakasiyana saizi saizi uye zvigadziriso, inopa kuchinjika uye scalability kune zvakasiyana kugadzirwa zvinodiwa.

Kuzvipira kwevet-china kune kugona kunovimbisa kuti yega yega Vertical Column Wafer Boat & Pedestal inosangana nemhando yepamusoro yemhando nekuita. Nekusarudza iyi yekucheka-kumucheto mhinduro, iwe unodyara mune ramangwana-humbowo nzira yekubata wafer iyo inowedzera kushanda nesimba uye kuvimbika mukugadzira semiconductor.

Zvivakwa zverecrystallized silicon carbide

Recrystallized silicon carbide (R-SiC) ndeyepamusoro-inoshanda zvinhu nekuoma kwechipiri kune diamond chete, iyo inoumbwa pakupisa kwakanyanya pamusoro pe2000 ℃. Iyo inochengeta akawanda akanakisa zvimiro zveSiC, senge tembiricha yakakwira simba, yakasimba corrosion resistance, yakanakisa oxidation kuramba, yakanaka thermal shock resistance uye zvichingodaro.

● Yakanakisa michina zvinhu. Recrystallized silicon carbide ine simba repamusoro uye kuomarara kupfuura kabhoni fiber, yakanyanya kupikisa kuramba, inogona kutamba kuita kwakanaka munzvimbo dzakanyanyisa tembiricha, inogona kutamba zvirinani kuenzanisa kuita mumamiriro akasiyana siyana. Mukuwedzera, inewo kushanduka kwakanaka uye haisi nyore kukuvadzwa nekutambanudza uye kupfugama, iyo inovandudza zvikuru kushanda kwayo.

● High corrosion resistance. Recrystallized silicon carbide ine high corrosion resistance kune zvakasiyana-siyana zvezvinobudisa nhau, zvinogona kudzivirira kuparara kwemarudzi akasiyana-siyana emagetsi, inogona kuchengetedza maitiro ayo emagetsi kwenguva yakareba, ine kunamatira kwakasimba, kuitira kuti ive nehupenyu hurefu hwebasa. Mukuwedzera, iyo inewo yakanaka kugadzikana kwekushisa, inogona kuenderana kune imwe siyana yekuchinja kwekushisa, kuvandudza kushanda kwayo kwekushanda.

● Sintering haidzike. Nekuti iyo sintering process haidzike, hapana kusara kunetseka kunokonzeresa deformation kana kuputika kwechigadzirwa, uye zvikamu zvine maumbirwo akaomarara uye yakanyanya kurongeka inogona kugadzirwa.

重结晶碳化硅物理特性 Zvenyama zvimiro zveRecrystallized Silicon Carbide
性质 / Property	典型数值 / Typical Value
使用温度/ Tembiricha yekushanda (°C)	1600°C (neokisijeni), 1700°C (inoderedza nharaunda)
SiC含量/ SiC zvemukati	> 99.96%
自由Si含量/ Yemahara Si zvemukati	<0.1%
体积密度/Bulk density	2.60-2.70 g/cm³
气孔率/ Inooneka porosity	<16%
抗压强度/ Kudzvinyirira simba	> 600MPa
常温抗弯强度/Kutonhora kukotama simba	80-90 MPa (20°C)
高温抗弯强度Simba rekukotama rinopisa	90-100 MPa (1400°C)
热膨胀系数/ Kuwedzera kupisa @1500°C	4.70 10^-6/°C
导热系数/Thermal conductivity @1200°C	23W/m•K
杨氏模量/ Elastic modulus	240 GPA
抗热震性/ Thermal shock resistance	Kunyanya kunaka

VET Energy ndizvo themugadziri chaiye weakagadziridzwa graphite uye silicon carbide zvigadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvakagadzirirwa zvikamu zve semiconductor uye photovoltaic indasitiri. Our tekinoroji timu inobva kumatunhu epamusoro ekutsvagisa dzimba, inogona kupa mamwe hunyanzvi zvinhu mhindurozvako.

Isu tinoramba tichigadzira advanced process kuti tipe zvimwe zvepamberi zvinhu,uyevakagadzira yakasarudzika tekinoroji ine patent, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.

CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Mamiriro	FCC β chikamu多晶，主要為（111）取向
密度 / Density	3.21 g/cm³
硬度 / Kuoma	2500 维氏硬度 (500g mutoro)
晶粒大小 / Zviyo SiZe	2~10μm
纯度 / Kemikari Kuchena	99.99995%
热容 / Kupisa Kugona	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Flexural Simba	415 MPa RT 4-poindi
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 / Kuwedzera Kupisa (CTE)	4.5 × 10^-6K^-1