Contiguous Wafer Boat

Tsanangudzo Pfupi:

Iyo Contiguous Wafer Boat kubva kuvet-china yakagadzirirwa kunyatsobata wafer mukugadzira semiconductor. Yakagadzirwa nehuchokwadi, vet-china's mhinduro inovimbisa kugadzikana kwekupisa uye makemikari kuramba, kugadzirisa maitiro ekugadzira uku ichideredza kukuvadzwa nekusimudzira kubuda.

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vet-china inounza mamiriro-e-the-art Contiguous Wafer Boat yakagadzirirwa chizvarwa chinotevera chekugadzira semiconductor. Iri bhoti rakagadzirwa zvine hungwaru rinopa kurongeka kusingaenzaniswi mukubata wafer, kuve nechokwadi chekushanda kusina musono uye nekuderedza zvakanyanya njodzi yekukuvadzwa panguva yekugadziriswa.

Yakavakwa nezvinhu zvemhando yepamusoro, iyo Contiguous Wafer Boat inozvirumbidza yakadzikama yekupisa uye yakasarudzika makemikari kuramba, ichiita kuti ive yakakodzera kune yakakwirira-tembiricha uye yakaoma makemikari nharaunda. Dhizaini yayo yekuvandudza inovimbisa kuti wafers anobatwa zvakachengeteka uye akanyatsoenderana, optimize throughput uye kuwedzera kugadzira kugadzira.

Iri bhoti rekucheka-kumucheto rakagadzirirwa kusangana nezvinodiwa zvemazuva ano semiconductor machira, achitsigira akasiyana wafer saizi uye zvigadziriso. Nekubatanidza iyo Contiguous Wafer Boat kubva kuvet-china mune yako yekugadzira mutsara, unogona kutarisira kukwidziridzwa kuita, kuderedzwa nguva, uye kuwedzera kwegoho.

Sangana nemusiyano nekuzvipira kwevet-china kune mhando uye hunyanzvi, kuendesa zvigadzirwa zvinosundira miganhu yekugadzira semiconductor. Sarudza iyo Contiguous Wafer Boat uye simudza yako wafer kugadzirisa kugona kune hurefu hutsva.

Zvivakwa zverecrystallized silicon carbide

Recrystallized silicon carbide (R-SiC) ndeyepamusoro-inoshanda zvinhu nekuoma kwechipiri kune diamond chete, iyo inoumbwa pakupisa kwakanyanya pamusoro pe2000 ℃. Iyo inochengeta akawanda akanakisa zvimiro zveSiC, senge tembiricha yakakwira simba, yakasimba corrosion resistance, yakanakisa oxidation kuramba, yakanaka thermal shock resistance uye zvichingodaro.

● Yakanakisa michina zvinhu. Recrystallized silicon carbide ine simba repamusoro uye kuomarara kupfuura kabhoni fiber, yakanyanya kupikisa kuramba, inogona kutamba kuita kwakanaka munzvimbo dzakanyanyisa tembiricha, inogona kutamba zvirinani kuenzanisa kuita mumamiriro akasiyana siyana. Mukuwedzera, inewo kushanduka kwakanaka uye haisi nyore kukuvadzwa nekutambanudza uye kupfugama, iyo inovandudza zvikuru kushanda kwayo.

● High corrosion resistance. Recrystallized silicon carbide ine high corrosion resistance kune zvakasiyana-siyana zvezvinobudisa nhau, zvinogona kudzivirira kuparara kwemarudzi akasiyana-siyana emagetsi, inogona kuchengetedza maitiro ayo emagetsi kwenguva yakareba, ine kunamatira kwakasimba, kuitira kuti ive nehupenyu hurefu hwebasa. Uye zvakare, ine zvakare yakanaka yekudziya kugadzikana, inogona kuchinjika kune humwe huwandu hwekuchinja kwekushisa, kuvandudza kushanda kwayo kwekushandisa.

● Sintering haidzike. Nekuti iyo sintering process haidzike, hapana kusara kunetseka kunokonzeresa deformation kana kuputika kwechigadzirwa, uye zvikamu zvine maumbirwo akaomarara uye yakanyanya kurongeka inogona kugadzirwa.

重结晶碳化硅物理特性 Zvenyama zvimiro zveRecrystallized Silicon Carbide
性质 / Property	典型数值 / Typical Value
使用温度/ Tembiricha yekushanda (°C)	1600°C (neokisijeni), 1700°C (inoderedza nharaunda)
SiC含量/ SiC zvemukati	> 99.96%
自由Si含量/ Yemahara Si zvemukati	<0.1%
体积密度/Bulk density	2.60-2.70 g/cm³
气孔率/ Inooneka porosity	<16%
抗压强度/ Kudzvinyirira simba	> 600MPa
常温抗弯强度/Kutonhora kukotama simba	80-90 MPa (20°C)
高温抗弯强度Simba rekukotama rinopisa	90-100 MPa (1400°C)
热膨胀系数/ Kuwedzera kupisa @1500°C	4.70 10^-6/°C
导热系数/Thermal conductivity @1200°C	23W/m•K
杨氏模量/ Elastic modulus	240 GPA
抗热震性/ Thermal shock resistance	Kunyanya kunaka

VET Energy ndizvo themugadziri chaiye weakagadziridzwa graphite uye silicon carbide zvigadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvakagadzirirwa zvikamu zve semiconductor uye photovoltaic indasitiri. Our tekinoroji timu inobva kumatunhu epamusoro ekutsvagisa dzimba, inogona kupa mamwe hunyanzvi zvinhu mhindurozvako.

Isu tinoramba tichigadzira advanced process kuti tipe zvimwe zvepamberi zvinhu,uyevakagadzira yakasarudzika tekinoroji ine patent, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.

CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Mamiriro	FCC β chikamu多晶，主要為（111）取向
密度 / Density	3.21 g/cm³
硬度 / Kuoma	2500 维氏硬度 (500g mutoro)
晶粒大小 / Zviyo SiZe	2~10μm
纯度 / Kemikari Kuchena	99.99995%
热容 / Kupisa Kugona	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Flexural Simba	415 MPa RT 4-poindi
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 / Kuwedzera Kupisa (CTE)	4.5 × 10^-6K^-1