Vet-ChinaSilicon Carbide CeramicCoating ndeyepamusoro-inoshanda inodzivirira coating yakagadzirwa zvakanyanya kuomarara uye isingapfekisilicon carbide (SiC)zvinhu, izvo zvinopa zvakanakisa kemikari corrosion kuramba uye yakakwirira-tembiricha kugadzikana. Aya maitiro akakosha mukugadzirwa kwesemiconductor, sakaSilicon Carbide Ceramic Coatinginoshandiswa zvakanyanya muzvikamu zvakakosha zvemichina yekugadzira semiconductor.
Basa chairo reVet-ChinaSilicon Carbide CeramicCoating mu semiconductor kugadzirwa kunotevera:
Wedzera kusimba kwemidziyo:Silicon Carbide Ceramic Coating Silicon Carbide Ceramic Coating inopa yakanakisa kuchengetedzwa kwepamusoro kune semiconductor yekugadzira michina nekuoma kwayo kwakanyanya uye kusapfeka. Kunyanya munzvimbo dzepamusoro-tembiricha uye dzinotyisa zvakanyanya, senge kemikari vapor deposition (CVD) uye plasma etching, iko kupfekedza kunogona kudzivirira zvakanyanya pamusoro pemidziyo kubva pakukuvadzwa nekukukurwa kwemakemikari kana kupfeka kwemuviri, nekudaro kuwedzera zvakanyanya hupenyu hwesevhisi. iyo midziyo uye kuderedza nguva yekudzikira kunokonzerwa nekudzoreredzwa uye kugadzirisa.
Kuvandudza kuchena kwemaitiro:Mukuita semiconductor yekugadzira, kusvibiswa kudiki kunogona kukonzera kukanganisa kwechigadzirwa. Iyo kemikari inertness yeSilicon Carbide Ceramic Coating inobvumira kuti irambe yakagadzikana pasi pemamiriro akanyanya, kudzivirira zvinhu kubva pakuburitsa zvimedu kana kusvibiswa, nekudaro kuve nechokwadi chekuchena kwezvakatipoteredza kwemaitiro. Izvi zvinonyanya kukosha pakugadzira matanho anoda kurongeka kwepamusoro uye kuchena kwepamusoro, sePECVD uye kuisirwa ion.
Optimize thermal management:Mune yakakwirira-tembiricha semiconductor kugadzirisa, sekukurumidza kupisa kwekupisa (RTP) uye oxidation maitiro, iyo yakanyanya kupisa conductivity yeSilicon Carbide Ceramic Coating inogonesa kugovera tembiricha yakafanana mukati memidziyo. Izvi zvinobatsira kudzikisira kushushikana kwekupisa uye deformation yezvinhu inokonzerwa nekuchinja kwekushisa, nekudaro inovandudza chigadzirwa chekugadzira uye kuenderana.
Tsigira zvakaoma process nharaunda:Mumatanho anoda kuomarara kudzora mhepo, senge ICP etching uye PSS etching maitiro, kugadzikana uye oxidation kuramba kweSilicon Carbide Ceramic Coating inova nechokwadi chekuti michina inochengetedza kushanda kwakagadzikana mukushanda kwenguva refu, kuderedza njodzi yekuparara kwezvinhu kana kukuvara kwemidziyo nekuda. kuchinja kwezvakatipoteredza.
CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating | |
性质 / Property | 典型数值 / Typical Value |
晶体结构 / Crystal Mamiriro | FCC β chikamu多晶,主要為(111)取向 |
密度 / Density | 3.21 g/cm³ |
硬度 / Kuoma | 2500 维氏硬度 (500g mutoro) |
晶粒大小 / Zviyo SiZe | 2~10μm |
纯度 / Kemikari Kuchena | 99.99995% |
热容 / Kupisa Kugona | 640 J·kg-1·K-1 |
升华温度 / Sublimation Temperature | 2700 ℃ |
抗弯强度 / Flexural Simba | 415 MPa RT 4-poindi |
杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
导热系数 / ThermalConductivity | 300Wm-1·K-1 |
热膨胀系数 / Kuwedzera Kupisa (CTE) | 4.5 × 10-6K-1 |
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