SiC yakavharwa graphite carrier chinhu chakakosha chinoshandiswa mune dzakasiyana semiconductor kugadzira maitiro. Isu tinoshandisa tekinoroji yedu ine patent kugadzira iyo silicon carbide mutakuri nekuchena kwakanyanya, kunaka kwekupfeka kwakafanana uye hupenyu hwesevhisi hwakanakisa, pamwe nekukwirira kwemakemikari kuramba uye kugadzikana kwemafuta.
Zvimiro zvezvigadzirwa zvedu:
1. High tembiricha oxidation kuramba kusvika 1700 ℃.
2. Kuchena kwepamusoro uye kufanana kwekupisa
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu
CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating | |
性质 / Property | 典型数值 / Typical Value |
晶体结构 / Crystal Mamiriro | FCC β chikamu多晶,主要為(111)取向 |
密度 / Density | 3.21 g/cm³ |
硬度 / Kuoma | 2500 维氏硬度 (500g mutoro) |
晶粒大小 / Zviyo SiZe | 2~10μm |
纯度 / Kemikari Kuchena | 99.99995% |
热容 / Kupisa Kugona | 640 J·kg-1·K-1 |
升华温度 / Sublimation Temperature | 2700 ℃ |
抗弯强度 / Flexural Simba | 415 MPa RT 4-poindi |
杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
导热系数 / ThermalConductivity | 300Wm-1·K-1 |
热膨胀系数 / Kuwedzera Kupisa (CTE) | 4.5 × 10-6K-1 |
VET Energy ndiyo chaiyo inogadzira yakagadziridzwa magirafu uye silicon carbide zvigadzirwa zvine machira akasiyana seSiC coating, TaC coating, girazi kabhoni coating, pyrolytic kabhoni coating, nezvimwewo, inogona kupa akasiyana akagadziridzwa zvikamu zve semiconductor uye photovoltaic indasitiri.
Chikwata chedu chehunyanzvi chinobva kumasangano epamusoro ekutsvagisa dzimba, anogona kukupa mamwe hunyanzvi zvigadziriso zvekushandisa kwauri.
Isu tinoramba tichigadzira maitiro epamberi ekupa zvimwe zvepamberi zvinhu, uye takagadzira yakasarudzika tekinoroji, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.
Tikugashirei noushamwari kuti ushanyire fekitari yedu, ngativei neimwe hurukuro!