China Mugadziri SiC Coated Graphite MOCVD Epitaxy Susceptor

Tsanangudzo Pfupi

Kuchena <5ppm
‣ Kufanana kwakanaka kwedoping
‣ High density uye kunamatira
‣ Yakanaka anti-corrosive uye kabhoni kuramba

‣ Professional customization
‣ Nguva pfupi yekufambisa
‣ Stable supply
‣ Kudzora kwemhando uye kuramba uchivandudza

Epitaxy yeGaN paSapphire(RGB / Mini / Micro LED);
Epitaxy yeGaN paSi Substrate(UVC);
Epitaxy yeGaN paSi Substrate(Electronical Device);
Epitaxy yeSi paSi Substrate(Integrated circuit);
Epitaxy yeSiC paSiC Substrate(Substrate);
Epitaxy yeInP paInP

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Yakakwira mhando MOCVD Susceptor Tenga online muChina

Wafer inoda kupfuura nematanho akati wandei isati yagadzirira kushandiswa mumidziyo yemagetsi. Imwe nzira yakakosha ndeye silicon epitaxy, umo mawaferi anotakurwa pamagraphite susceptors. Zvimiro uye hunhu hwema susceptors zvine mhedzisiro yakakosha pamhando yewafer's epitaxial layer.

Kune akaonda firimu deposition phases senge epitaxy kana MOCVD, VET inopa Ultra-pure graphteequipment inoshandiswa kutsigira substrates kana "wafers". Pakati pekuita, iyi midziyo, epitaxy susceptors kana satellite mapuratifomu eMOCVD, anotanga kuiswa pasi penzvimbo yekuisa:

Kupisa kwepamusoro.
Vacuum yakakwirira.
Kushandiswa kwehasha gaseous precursors.
Zero kusvibiswa, kusavapo kwekupepeta.
Kupokana kune yakasimba acid panguva yekuchenesa mabasa

VET Energy ndiyo chaiyo inogadzira yakagadziridzwa magirafu uye silicon carbide zvigadzirwa zvine coating ye semiconductor uye photovoltaic indasitiri. Chikwata chedu chehunyanzvi chinobva kumasangano epamusoro ekutsvagisa dzimba, anogona kukupa mamwe hunyanzvi zvigadziriso zvekushandisa kwauri.

Isu tinoramba tichigadzira maitiro epamberi ekupa zvimwe zvepamberi zvinhu, uye takagadzira yakasarudzika tekinoroji, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.

Zvimiro zvezvigadzirwa zvedu:

1. High tembiricha oxidation kuramba kusvika 1700 ℃.
2. Kuchena kwepamusoro uye kufanana kwekupisa
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu

CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Mamiriro	FCC β chikamu多晶，主要為（111）取向
密度 / Density	3.21 g/cm³
硬度 / Kuoma	2500 维氏硬度 (500g mutoro)
晶粒大小 / Zviyo SiZe	2~10μm
纯度 / Kemikari Kuchena	99.99995%
热容 / Kupisa Kugona	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Flexural Simba	415 MPa RT 4-poindi
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 / Kuwedzera Kupisa (CTE)	4.5 × 10^-6K^-1