VET Energy GaN paSilicon Wafer ndeye yekucheka-kumucheto semiconductor mhinduro yakagadzirirwa yakanangana neredhiyo frequency (RF) application. Nekukura kwepamusoro-mhando gallium nitride (GaN) pasilicon substrate, VET Energy inopa inodhura-inoshanda uye yakakwirira-inoshanda chikuva chemhando dzakasiyana dzeRF zvishandiso.
Iyi GaN paSilicon wafer inoenderana nezvimwe zvinhu zvakaita seSi Wafer, SiC Substrate, SOI Wafer, uye SiN Substrate, ichiwedzera mashandiro ayo akasiyana-siyana ekugadzira maitiro. Pamusoro pezvo, yakagadziridzwa kuti ishandiswe neEpi Wafer uye zvinhu zvepamberi seGallium Oxide Ga2O3 uye AlN Wafer, iyo inowedzera kuwedzera mashandisirwo ayo mumagetsi emagetsi epamusoro. Iwo mawafer akagadzirirwa seamless kubatanidzwa mumasisitimu ekugadzira uchishandisa yakajairwa Cassette kubata kuti zvive nyore kushandisa uye kuwedzera kugadzirwa kwekuita.
VET Energy inopa yakazara portfolio ye semiconductor substrates, kusanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, uye AlN Wafer. Chigadzirwa chedu chakasiyana mutsara chinopa kune zvinodiwa zveakasiyana emagetsi maapplication, kubva kumagetsi emagetsi kuenda kuRF uye optoelectronics.
GaN paSilicon Wafer inopa akati wandei mabhenefiti eRF zvikumbiro:
• High-frequency performance:GaN's wide bandgap uye high electron mobility inogonesa kushanda kwepamusoro-frequency, zvichiita kuti ive yakanakira 5G uye mamwe masisitimu ekukurumidzira ekutaurirana.
• High power density:Zvishandiso zveGaN zvinogona kubata akakwira simba density zvichienzaniswa neyakajairwa silicon-based zvishandiso, zvinotungamira kune yakawanda compact uye inoshanda RF masisitimu.
• Kushandisa simba kwakaderera:Zvishandiso zveGaN zvinoratidza kushandiswa kwesimba kwakaderera, zvichikonzera kuvandudzwa kwesimba uye kuderedza kupisa kwekupisa.
Applications:
• 5G kutaurirana pasina waya:GaN paSilicon wafers yakakosha pakuvaka yakakwirira-inoshanda 5G base zviteshi uye nharembozha.
• Radar masisitimu:GaN-based RF amplifiers anoshandiswa muma radar masisitimu ekuita kwavo kwepamusoro uye bandwidth yakafara.
• Kukurukurirana nesaiti:Zvigadzirwa zveGaN zvinogonesa masimba epamusoro-soro uye epamusoro-frequency setiraiti yekutaurirana masisitimu.
• Military electronics:GaN-based RF zvikamu zvinoshandiswa mukushandiswa kwechiuto senge electronic warfare uye radar masisitimu.
VET Energy inopa customizable GaN paSilicon wafers kuti isangane nezvinodiwa zvako, zvinosanganisira akasiyana doping mazinga, ukobvu, uye saizi yewafer. Chikwata chedu chehunyanzvi chinopa rutsigiro rwehunyanzvi uye mushure mekutengesa-sevhisi kuti uve nechokwadi chekubudirira kwako.
WAFERING SECIFICATIONS
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inch | 6-Inch | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Bow(GF3YFCD)-Absolute Value | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
SURFACE FINISH
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inch | 6-Inch | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
Surface Finish | Kaviri divi Optical Polish, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Edge Chips | Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm) | ||||
Indents | Hapana Inobvumirwa | ||||
Makwara (Si-Face) | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | ||
Mitswe | Hapana Inobvumirwa | ||||
Kusabatanidzwa kumucheto | 3mm |