6 Inch Semi Insulating SiC Wafer

Tsanangudzo Pfupi:

VET Energy 6 inch semi-insulating silicon carbide (SiC) wafer ndeyepamusoro-mhando substrate yakanakira akasiyana emagetsi emagetsi maapplication. VET Energy inoshandisa nzira dzekukura dzepamusoro kugadzira SiC wafers ine yakasarudzika crystal mhando, yakaderera defect density, uye yakakwirira resistivity.

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Iyo 6 Inch Semi Insulating SiC Wafer kubva kuVET Energy ndiyo mhinduro yepamusoro-yepamusoro-simba uye yakakwirira-frequency application, inopa yepamusoro yekupisa conductivity uye magetsi ekudzivirira. Aya semi-insulating wafers akakosha mukuvandudza kwemidziyo yakadai seRF amplifiers, magetsi switch, uye zvimwe zvinhu zvakakwirira-voltage. VET Energy inogonesa kuenderana kwemhando uye kuita, ichiita kuti mawafers aya ave akanaka kune akasiyana siyana semiconductor ekugadzira maitiro.

Pamusoro pezvivakwa zvavo zvekudzivirira zvekudzivirira, aya maSiC wafers anowirirana nemhando dzakasiyana siyana zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, uye Epi Wafer, zvichiita kuti dzigone kuenderana nemhando dzakasiyana dzekugadzira maitiro. Zvakare, zvinhu zvemberi zvakaita seGallium Oxide Ga2O3 uye AlN Wafer zvinogona kushandiswa pamwe chete neaya maSiC wafers, zvichipa kutonyanya kuchinjika mumagetsi emagetsi emagetsi. Iwo mawafer akagadzirirwa seamless kubatanidzwa neindasitiri-yakajairwa yekubata masisitimu seCassette masisitimu, kuve nechokwadi chekushandisa muhuwandu hwekugadzira marongero.

VET Energy inopa yakazara portfolio ye semiconductor substrates, kusanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, uye AlN Wafer. Chigadzirwa chedu chakasiyana mutsara chinopa kune zvinodiwa zveakasiyana emagetsi maapplication, kubva kumagetsi emagetsi kuenda kuRF uye optoelectronics.

6 inch semi-insulating SiC wafer inopa akati wandei mabhenefiti:
High breakdown voltage: Iyo yakafara bhendi yeSiC inogonesa yakakwira kuputsa voltages, ichibvumira mamwe compact uye anoshanda magetsi emagetsi.
Kushanda kwepamusoro-tembiricha: SiC's yakanakisa kupisa conductivity inogonesa kushanda patembiricha yepamusoro, inovandudza kuvimbika kwechishandiso.
Yakaderera pa-resistance: SiC zvishandiso zvinoratidza kuderera-kupikisa, kuderedza kurasikirwa kwemagetsi uye kuvandudza kushanda kwesimba.

VET Energy inopa customizable SiC wafers kuti isangane nezvako chaizvo zvaunoda, zvinosanganisira ukobvu hwakasiyana, mazinga edoping, uye kupera kwepasi. Chikwata chedu chehunyanzvi chinopa rutsigiro rwehunyanzvi uye mushure mekutengesa-sevhisi kuti uve nechokwadi chekubudirira kwako.

WAFERING SECIFICATIONS

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-inch
Item	nP	n-Pm	n-Mapisarema	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Absolute Value	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-inch
	nP	n-Pm	n-Mapisarema	SI	SI
Surface Finish	Kaviri divi Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Edge Chips	Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm)
Indents	Hapana Inobvumirwa
Makwara (Si-Face)	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita			Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita
Mitswe	Hapana Inobvumirwa
Kusabatanidzwa kumucheto	3mm