vet-china inovimbisa kuti Yese YakasimbaSilicon Carbide Wafer Inobata Paddleine kuita kwakanakisa uye kusimba. Iyi silicon carbide wafer inobata paddle inoshandisa advanced kugadzira maitiro kuona kuti kugadzikana kwayo uye kushanda kwayo kunoramba kuri mukupisa kwakanyanya uye makemikari ekuora nharaunda. Iyi dhizaini yekuvandudza inopa yakanakisa rutsigiro rwe semiconductor wafer kubata, kunyanya kune yakakwirira-chaiyo otomatiki mashandiro.
SiC Cantilever Paddlechinhu chakasarudzika chinoshandiswa mumichina yekugadzira semiconductor senge oxidation vira, diffusion furnace, uye annealing vira, iyo inonyanya kushandiswa ndeye wafer kurodha uye kuburitsa, inotsigira uye kutakura mawafer panguva yekupisa kwepamusoro maitiro.
Common structuresyeSiCcantileverpaddle: cantilever structure, yakagadziriswa kune imwe mugumo uye yakasununguka kune imwe, inowanzo ine flat uye paddle-like design.
KushandaprincipleyeSiCcantileverpaddle:
Iyo cantilever paddle inogona kukwira nekudzika kana kumashure nekudzoka mukati mekamuri yevira, inogona kushandiswa kufambisa mawaferi kubva kunzvimbo dzekurodha kuenda kunzvimbo dzekugadzirisa, kana kunze kwenzvimbo dzekugadzirisa, inotsigira uye kudzikamisa wafers panguva yekupisa-kupisa.
| Zvenyama zvimiro zveRecrystallized Silicon Carbide | |
| Property | Typical Value |
| Tembiricha yekushanda (°C) | 1600°C (neokisijeni), 1700°C (inoderedza nharaunda) |
| SiC content | > 99.96% |
| Free Si content | <0.1% |
| Bulk density | 2.60-2.70 g/cm3 |
| Inooneka porosity | <16% |
| Kumanikidza simba | > 600 MPa |
| Kutonhora kukotama simba | 80-90 MPa (20°C) |
| Simba rekukotama rinopisa | 90-100 MPa (1400°C) |
| Kuwedzera kupisa @1500°C | 4.70 10-6/°C |
| Thermal conductivity @1200°C | 23 W/m•K |
| Elastic modulus | 240 GPA |
| Thermal shock resistance | Kunyanya kunaka |
