Mutsetse wechigadzirwa cheVET Energy haungogumiri kuGaN paSiC wafers. Isu tinopawo zvakasiyana-siyana zve semiconductor substrate zvinhu, zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nezvimwewo. Pamusoro pezvo, tiri kushingairira kugadzira zvitsva zvakafara bandgap semiconductor zvinhu, zvakaita seGallium Oxide Ga2O3 neAlN. Wafer, kusangana neramangwana simba remagetsi indasitiri yekuda kwepamusoro mashandiro emidziyo.
VET Energy inopa masevhisi anochinjika, uye inokwanisa kugadzirisa GaN epitaxial akaturikidzana ehukobvu hwakasiyana, marudzi akasiyana edoping, uye masaizi akasiyana ewafer zvinoenderana nezvinodiwa nevatengi. Uye zvakare, isu tinopawo nyanzvi yehunyanzvi rutsigiro uye mushure mekutengesa-sevhisi kubatsira vatengi kukurumidza kugadzira yakakwirira-inoshanda magetsi emagetsi zvigadzirwa.
WAFERING SECIFICATIONS
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Bow(GF3YFCD)-Absolute Value | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
SURFACE FINISH
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
Surface Finish | Kaviri divi Optical Polish, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Edge Chips | Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm) | ||||
Indents | Hapana Inobvumirwa | ||||
Makwara (Si-Face) | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | ||
Mitswe | Hapana Inobvumirwa | ||||
Kusabatanidzwa kumucheto | 3mm |