Zvivakwa zverecrystallized silicon carbide
Recrystallized silicon carbide (R-SiC) ndeyepamusoro-inoshanda zvinhu nekuoma kwechipiri kune diamond chete, iyo inoumbwa pakupisa kwakanyanya pamusoro pe2000 ℃. Iyo inochengeta akawanda akanakisa zvimiro zveSiC, senge tembiricha yakakwira simba, yakasimba corrosion resistance, yakanakisa oxidation kuramba, yakanaka thermal shock resistance uye zvichingodaro.
● Yakanakisa michina zvinhu. Recrystallized silicon carbide ine simba repamusoro uye kuomarara kupfuura kabhoni fiber, yakanyanya kupikisa kuramba, inogona kutamba kuita kwakanaka munzvimbo dzakanyanyisa tembiricha, inogona kutamba zvirinani kuenzanisa kuita mumamiriro akasiyana siyana. Mukuwedzera, inewo kushanduka kwakanaka uye haisi nyore kukuvadzwa nekutambanudza uye kupfugama, iyo inovandudza zvikuru kushanda kwayo.
● High corrosion resistance. Recrystallized silicon carbide ine high corrosion resistance kune zvakasiyana-siyana zvezvinobudisa nhau, zvinogona kudzivirira kuparara kwemarudzi akasiyana-siyana emagetsi, inogona kuchengetedza maitiro ayo emagetsi kwenguva yakareba, ine kunamatira kwakasimba, kuitira kuti ive nehupenyu hurefu hwebasa. Mukuwedzera, iyo inewo yakanaka kugadzikana kwekushisa, inogona kuenderana kune imwe siyana yekuchinja kwekushisa, kuvandudza kushanda kwayo kwekushanda.
● Sintering haidzike. Nekuti iyo sintering process haidzike, hapana kusara kunetseka kunokonzeresa deformation kana kuputika kwechigadzirwa, uye zvikamu zvine maumbirwo akaomarara uye yakanyanya kurongeka inogona kugadzirwa.
| 重结晶碳化硅物理特性 Zvenyama zvimiro zveRecrystallized Silicon Carbide | |
| 性质 / Property | 典型数值 / Typical Value |
| 使用温度/ Tembiricha yekushanda (°C) | 1600°C (neokisijeni), 1700°C (inoderedza nharaunda) |
| SiC含量/ SiC zvemukati | > 99.96% |
| 自由Si含量/ Yemahara Si zvemukati | <0.1% |
| 体积密度/Bulk density | 2.60-2.70 g/cm3 |
| 气孔率/ Inooneka porosity | <16% |
| 抗压强度/ Kudzvinyirira simba | > 600MPa |
| 常温抗弯强度/Kutonhora kukotama simba | 80-90 MPa (20°C) |
| 高温抗弯强度Simba rekukotama rinopisa | 90-100 MPa (1400°C) |
| 热膨胀系数/ Kuwedzera kupisa @1500°C | 4.70 10-6/°C |
| 导热系数/Thermal conductivity @1200°C | 23W/m•K |
| 杨氏模量/ Elastic modulus | 240 GPA |
| 抗热震性/ Thermal shock resistance | Kunyanya kunaka |
VET Energy ndizvo themugadziri chaiye weakagadziridzwa graphite uye silicon carbide zvigadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvakagadzirirwa zvikamu zve semiconductor uye photovoltaic indasitiri. Our tekinoroji timu inobva kumatunhu epamusoro ekutsvagisa dzimba, inogona kupa mamwe hunyanzvi zvinhu mhindurozvako.
Isu tinoramba tichigadzira advanced process kuti tipe zvimwe zvepamberi zvinhu,uyevakagadzira yakasarudzika tekinoroji ine patent, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.
| CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating | |
| 性质 / Property | 典型数值 / Typical Value |
| 晶体结构 / Crystal Mamiriro | FCC β chikamu多晶，主要為（111）取向 |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Kuoma | 2500 维氏硬度 (500g mutoro) |
| 晶粒大小 / Zviyo SiZe | 2~10μm |
| 纯度 / Kemikari Kuchena | 99.99995% |
| 热容 / Kupisa Kugona | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Flexural Simba | 415 MPa RT 4-poindi |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Kuwedzera Kupisa (CTE) | 4.5 × 10-6K-1 |
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