8 Inisi P Ituaiga Silicon Wafer

Fa'amatalaga Puupuu:

Fa'ailoaina le 8 Inisi P Type Silicon Wafer, fa'ailoga o le tulaga lelei mai le VET Energy. O lenei wafer tulaga ese, o loʻo faʻaalia ai le P-type doping profile, ua maeʻa faʻainisinia ina ia ausia tulaga maualuga o le lelei ma le faʻatinoga.


Fa'amatalaga Oloa

Faailoga o oloa

O le 8 Inch P Type Silicon Wafer mai le VET Energy o se faʻamaʻi silikoni maualuga e faʻatulagaina mo le tele o faʻaoga semiconductor, e aofia ai sela sola, masini MEMS, ma fesoʻotaʻiga tuʻufaʻatasia. Ua lauiloa mo le lelei tele o le eletise ma le faʻatinoina faifaipea, o lenei wafer o le filifiliga sili lea mo tagata gaosi oloa o loʻo vaʻavaʻai e gaosia mea faʻaeletoroni faʻalagolago ma lelei. O le VET Energy e fa'amautinoa le sa'o o le doping ma le maualuga o le fa'ai'uga mo le fa'aogaina o masini.

O nei 8 Inisi P Type Silicon Wafers e fetaui lelei ma mea eseese e pei o le SiC Substrate, SOI Wafer, SiN Substrate, ma e talafeagai mo le tuputupu aʻe o le Epi Wafer, faʻamautinoa le faʻaogaina mo le gaosiga o gaosiga semiconductor. E mafai fo'i ona fa'aoga fa'atasi ma isi mea fa'atekonolosi e pei o le Gallium Oxide Ga2O3 ma le AlN Wafer, ma fa'auiga lelei mo fa'aoga fa'aeletoroni e sosoo ai. O la latou mamanu malosi e fetaui lelei i faiga fa'avae kaseti, fa'amautinoa le lelei ma le maualuga o le gaosiga o le gaosiga.

O le VET Energy e tu'uina atu i tagata fa'atau a latou fa'afofoga fa'apitoa. E mafai ona tatou customize wafers ma eseese resistivity, mea okesene, mafiafia, ma isi e tusa ai ma manaoga faapitoa o tagata faatau. E le gata i lea, matou te tuʻuina atu foʻi le lagolago faʻapitoa faʻapolofesa ma le maeʻa ona faʻatau atu auaunaga e fesoasoani ai i tagata faʻatau e foia faʻafitauli eseese e feagai i le faagasologa o le gaosiga.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'AI'U LELEI

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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