4 Inisi GaAs Wafer

Fa'amatalaga Puupuu:

VET Energy 4 inch GaAs wafer o se mea e sili ona mama semiconductor substrate lauiloa mo ana mea fa'aeletoroni lelei, ma avea ai ma filifiliga lelei mo le tele o fa'aoga. E fa'aaogaina e le VET Energy auala fa'atupu tioata fa'ato'aga e gaosia ai gaAs wafers e tulaga ese le tutusa, maualalo le tele o fa'aletonu, ma le sa'o o le doping.


Fa'amatalaga Oloa

Faailoga o oloa

O le 4 Inch GaAs Wafer mai le VET Energy o se mea taua mo le televave ma le optoelectronic masini, e aofia ai RF amplifiers, LEDs, ma sela sola. O nei wafers ua lauiloa ona o le maualuga o le eletise eletise ma le mafai ona faʻaogaina i luga o laina maualuga, ma avea ai ma vaega autu i faʻaoga semiconductor. O le VET Energy e fa'amautinoa le maualuga o le gaAs wafers ma le mafiafia tutusa ma le itiiti o fa'aletonu, e talafeagai mo le tele o faiga fa'atauva'a.

O nei 4 Inisi GaAs Wafers e fetaui ma mea semiconductor eseese e pei o Si Wafer, SiC Substrate, SOI Wafer, ma SiN Substrate, e faʻaogaina ai mo le tuʻufaʻatasia i fausaga masini eseese. Pe faʻaaogaina mo le gaosiga o le Epi Wafer poʻo faʻatasi ma mea faʻapipiʻi e pei o le Gallium Oxide Ga2O3 ma le AlN Wafer, latou te ofoina atu se faʻavae faʻalagolago mo le isi augatupulaga eletise. E le gata i lea, o le wafers e matua fetaui lelei ma faiga fa'avae kaseti, fa'amautinoaina le sologa lelei o gaioiga i su'esu'ega ma siosiomaga gaosiga maualuga.

O le VET Energy e ofoina atu se vaega atoatoa o mea faʻapipiʻi semiconductor, e aofia ai Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, ma AlN Wafer. O la matou laina oloa eseese e fetaui ma manaʻoga o faʻaoga eletise eseese, mai le eletise eletise i le RF ma le optoelectronics.

VET Energy ofo atu gaAs wafers fa'apitoa e fetaui ma ou mana'oga fa'apitoa, e aofia ai tulaga eseese o doping, fa'ata'ita'iga, ma fa'ai'uga i luga. O la matou 'au fa'apitoa e tu'uina atu le lagolago fa'apitoa ma le 'au'aunaga pe a uma ona fa'atau e fa'amautinoa ai lou manuia.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'AI'U LELEI

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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