12 Inisi SOI Wafer

Fa'amatalaga Puupuu:

Tofo i mea fou e le'i iai muamua i le 12 Inch SOI Wafer, o se mea fa'atekinolosi fa'atekinolosi ua fa'amaualuga mai ia te oe e le VET Energy. Fausia ma le sa'o ma le poto, o lenei Silicon-On-Insulator wafer e toe fa'avasegaina tulaga fa'apisinisi, ofoina atu le lelei ma le fa'atinoga.


Fa'amatalaga Oloa

Faailoga o oloa

VET Energy 12-inisi SOI wafer o se mea e sili ona maualuga le semiconductor substrate, lea e sili ona fiafia i ai ona o mea lelei eletise ma fausaga tulaga ese. E fa'aogaina e le VET Energy le tele o faiga o le gaosiga o le wafer SOI e fa'amautinoa ai o le wafer e matua maualalo le tafe o le taimi nei, maualuga le saoasaoa ma le fa'asalaina o le radiation, e maua ai se fa'avae mautu mo au ta'amilosaga tu'ufa'atasiga maualuga.

Ole laina ole oloa ole VET Energy e le fa'atapula'aina ile wafer SOI. Matou te tuʻuina atu foʻi le tele o mea faʻapipiʻi semiconductor substrate, e aofia ai Si Wafer, SiC Substrate, SiN Substrate, Epi Wafer, ma isi, faʻapea foʻi ma mea fou faʻapipiʻi semiconductor lautele e pei o Gallium Oxide Ga2O3 ma AlN Wafer. O nei oloa e mafai ona faʻafetaui manaoga faʻaoga o tagata faʻatau eseese i le eletise eletise, RF, masini ma isi fanua.

O le taula'i atu i le tulaga lelei, o lo'o fa'aogaina fo'i e a tatou u'amea so'o mea fa'apitoa e pei o le gallium oxide Ga2O3, kaseti ma AlN wafers e fa'amautinoa ai le fa'atuatuaina ma le lelei i tulaga fa'atino uma. Fa'alagolago i le VET Energy e tu'uina atu fofo fa'amutaina e fa'aola ai le ala mo le fa'agasologa o tekonolosi.

Fa'ailoa le gafatia o lau galuega fa'atasi ma le fa'atinoga sili o VET Energy 12-inisi SOI wafers. Fa'ateleina lou gafatia fa'afouga ma fa'a'ofu'ofu e fa'aalia ai le lelei, sa'o ma le fa'afouga, fa'ata'atia le fa'avae mo le manuia i le tulaga fa'amalosi o tekonolosi semiconductor. Filifili le VET Energy mo vaifofo wafer SOI e sili atu nai lo fa'amoemoega.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'AI'U LELEI

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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