6 Inisi Semi Insulating SiC Wafer

Fa'amatalaga Puupuu:

VET Energy 6 inisi semi-insulating silicon carbide (SiC) wafer o se mea'ai sili ona lelei mo le tele o fa'aoga eletise eletise. E fa'aaogaina e le VET Energy ni metotia fa'atuputupula'e e gaosia ai siC ​​wafers ma tulaga lelei tioata, maualalo fa'aletonu, ma maualuga tete'e.


Fa'amatalaga Oloa

Faailoga o oloa

O le 6 Inisi Semi Insulating SiC Wafer mai le VET Energy o se fofo sili atu mo le maualuga o le malosi ma le maualuga o faʻaoga, e ofoina atu le maualuga o le vevela ma le eletise eletise. O nei mea faʻapipiʻi semi-insulating e taua i le atinaʻeina o masini e pei o RF amplifier, sui eletise, ma isi vaega maualuga-voltage. E fa'amautinoaina e le VET Energy le tulaga lelei ma le fa'atinoga, ma fa'alelei lelei ai nei ma'i mo le tele o fa'agasologa o faiga fa'a-semiconductor.

I le faaopoopo atu i a latou mea faʻapitoa faʻamalama, o nei SiC wafers e fetaui ma mea eseese e aofia ai Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, ma Epi Wafer, e faʻaogaina ai mo ituaiga eseese o gaosiga. E le gata i lea, o mea faʻapitoa e pei o Gallium Oxide Ga2O3 ma AlN Wafer e mafai ona faʻaogaina faʻatasi ma nei SiC wafers, e maua ai le sili atu le fetuutuunai i masini eletise eletise. Ua mamanuina le fa'aputu mo le fa'aogaina lelei ma faiga fa'atautaia masani fa'apisinisi e pei o faiga Kaseti, fa'amautinoaina le faigofie o le fa'aoga i le tele o gaosiga.

O le VET Energy e ofoina atu se vaega atoatoa o mea faʻapipiʻi semiconductor, e aofia ai Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, ma AlN Wafer. O la matou laina oloa eseese e fetaui ma manaʻoga o faʻaoga eletise eseese, mai le eletise eletise i le RF ma le optoelectronics.

6 inisi semi-insulating SiC wafer e ofoina atu le tele o tulaga lelei:
Volitele malepe maualuga: O le vaeluaga lautele o le SiC e mafai ai ona maualuga le malepelepe voltage, faʻatagaina mo masini eletise sili atu ma lelei.
Faʻatonuga maualuga-vevela: SiC's sili ona lelei le faʻaogaina o le vevela e mafai ai ona faʻaogaina i le maualuga o le vevela, faʻaleleia atili le faʻatuatuaina o masini.
E maualalo i luga o le tetee: SiC masini e faʻaalia le maualalo i luga o le tetee, faʻaitiitia le paʻu eletise ma faʻaleleia le malosi.

VET Energy ofo atu siC wafers fa'apitoa e fa'amalieina ou mana'oga fa'apitoa, e aofia ai mafiafia eseese, tulaga o le doping, ma fa'ai'uga o luga. O la matou 'au fa'apitoa e tu'uina atu le lagolago fa'apitoa ma le 'au'aunaga pe a uma ona fa'atau e fa'amautinoa ai lou manuia.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'ATA'U LUGA

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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