Igiciro gito Kubushinwa Bwiza Bwiza Bwashushanyije Graphite Ubushyuhe bwa Polycrystalline Silicon Ingot Furnace

Ibisobanuro bigufi:

Isuku <5ppm
Uniform Guhuza neza doping
Ens Ubucucike bukabije no gufatana
‣ Kurwanya ruswa no kurwanya karubone

Custom Guhitamo umwuga
Time Igihe gito cyo kuyobora
Supply Gutanga ibintu bihamye
Control Kugenzura ubuziranenge no gukomeza gutera imbere

Epitaxy ya GaN kuri safiro(RGB / Mini / Micro LED);Epitaxy ya GaN kuri Si Substrate(UVC);Epitaxy ya GaN kuri Si Substrate(Igikoresho cya elegitoroniki);Epitaxy ya Si kuri Si Substrate(Inzira ihuriweho);Epitaxy ya SiC kuri Substrate ya SiC(Substrate);Epitaxy ya InP kuri InP

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Ibicuruzwa birambuye

Ibicuruzwa

Turakomeza gukomeza kwiyongera no gutunganya ibisubizo byacu na serivisi. Muri icyo gihe, dukora cyane kugira ngo dukore ubushakashatsi no kuzamura igiciro gito ku Bushinwa Bwiza Bwiza Bwakorewe Graphite Heater ya Polycrystalline Silicon Ingot Furnace, Uruganda rwacu rwahise rwiyongera mu bunini no gukundwa cyane kubera ubwitange bwuzuye mu gukora ubuziranenge bwo hejuru, igiciro kinini cya ibicuruzwa nabatanga serivisi nziza.
Turakomeza gukomeza kwiyongera no gutunganya ibisubizo byacu na serivisi. Mugihe kimwe, dukora cyane kugirango dukore ubushakashatsi no kuzamuraUbushinwa Graphite Gushyushya Itanura, Igishushanyo mbonera cya Graphite, Gusa kugirango tugere ku bicuruzwa byiza-byujuje ibyifuzo byabakiriya, ibicuruzwa byacu byose nibisubizo byagenzuwe cyane mbere yo koherezwa. Buri gihe dutekereza kubibazo kuruhande rwabakiriya, kuko uratsinze, turatsinda!

2022 ubuziranenge bwa MOCVD Susceptor Gura kumurongo mubushinwa

Ubucucike bugaragara:	1,85 g / cm3
Kurwanya amashanyarazi:	11 μΩm
Icyerekezo cyoroshye:	49 MPa (500kgf / cm2)
Gukomera ku nkombe:	58
Ivu:	<5ppm
Amashanyarazi:	116 W / mK (100 kcal / mhr- ℃)

Wafer ni agace ka silicon hafi ya milimetero 1 z'ubugari bufite ubuso buringaniye cyane bitewe nuburyo bukenewe mubuhanga. Imikoreshereze ikurikira igena uburyo bwo gukura bwa kristu bugomba gukoreshwa. Mubikorwa bya Czochralski, kurugero, silicon polycrystalline irashonga hanyuma ikaramu yoroheje yimbuto ikaramu ikarishye muri silikoni yashongeshejwe. Imbuto ya kirisiti noneho irazunguruka kandi ikururwa buhoro buhoro hejuru. Colosus iremereye cyane, monocrystal, ibisubizo. Birashoboka guhitamo monocrystal ibiranga amashanyarazi wongeyeho uduce duto twa dopants-yera cyane. Crystal ikoporowe ikurikije ibisobanuro byabakiriya hanyuma igasukurwa hanyuma igabanywamo ibice. Nyuma yinyongera zinyuranye zibyara umusaruro, umukiriya yakira wafer yihariye mugupakira bidasanzwe, byemerera umukiriya gukoresha wafer ako kanya kumurongo wacyo.

Wafer ikeneye kunyura munzira nyinshi mbere yuko yitegura gukoreshwa mubikoresho bya elegitoroniki. Inzira imwe yingenzi ni silicon epitaxy, aho wafers ikorerwa kuri susite ya grafite. Imiterere nubwiza bwa susceptors bigira ingaruka zikomeye kumiterere ya epitaxial ya wafer.

Kubice bya firime yoroheje nka epitaxy cyangwa MOCVD, VET itanga ultra-pure graphiteequothing ikoreshwa mugushigikira substrate cyangwa "wafers". Intandaro yimikorere, ibi bikoresho, epitaxy susceptors cyangwa satelite ya MOCVD, babanje gukorerwa ibidukikije:

Ubushyuhe bwo hejuru.
Icyuho kinini.
Gukoresha gase ya gazi ibanziriza.
Kwanduza zeru, kubura gukuramo.
Kurwanya aside ikomeye mugihe cyo gukora isuku