Hoʻolālā ʻia kēia 6 Inch N Type SiC Wafer no ka hoʻomaikaʻi ʻana i ka hana i nā kūlana koʻikoʻi, e lilo ia i koho kūpono no nā noi e koi ana i ka mana kiʻekiʻe a me ke kūpaʻa wela. ʻO nā huahana koʻikoʻi e pili ana i kēia wafer ʻo Si Wafer, SiC Substrate, SOI Wafer, a me SiN Substrate. Hōʻoia kēia mau mea i ka hana maikaʻi loa i nā ʻano hana hana semiconductor, hiki i nā mea hana i ʻoi aku ka ikaika a me ka lōʻihi.
No nā hui e hana pū ana me Epi Wafer, Gallium Oxide Ga2O3, Cassette, a i ʻole AlN Wafer, hāʻawi ka VET Energy's 6 Inch N Type SiC Wafer i ke kumu kūpono no ka hoʻomohala ʻana i nā huahana hou. Inā i loko o ka uila mana kiʻekiʻe a i ʻole ka mea hou loa i ka ʻenehana RF, hōʻoia kēia mau wafers i ka conductivity maikaʻi loa a me ka pale ʻana i ka wela liʻiliʻi, e koi ana i nā palena o ka pono a me ka hana.
OLELO HOOLAHA WAFERING
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Kakaka (GF3YFCD)-Waiwai Loa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | ʻO ka beveling |
ILI HOPE
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
Hoʻopau ʻili | ʻaoʻao ʻelua Optical Polish, Si- Face CMP | ||||
ʻAhaʻulaʻula | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
ʻOpeʻa lihi | ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm) | ||||
Indents | ʻAʻole ʻae ʻia | ||||
Nā ʻōpala (Si-Face) | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | ||
māwae | ʻAʻole ʻae ʻia | ||||
Hoʻokuʻu Edge | 3mm |