Hoʻohana nui ʻia nā wafers silika 8-inihi o VET Energy i ka uila uila, nā mea ʻike, nā kaapuni hoʻohui a me nā kahua ʻē aʻe. Ma keʻano he alakaʻi i kaʻoihana semiconductor, ua paʻa mākou i ka hoʻolakoʻana i nā huahana Si Wafer kiʻekiʻe e hoʻokō i nā pono ulu o kā mākou mea kūʻai.
Ma waho aʻe o Si Wafer, hāʻawi pū ka VET Energy i kahi ākea o nā mea semiconductor substrate, me ka SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, a me nā mea ʻē aʻe. ʻO Wafer, e hāʻawi ana i ke kākoʻo ikaika no ka hoʻomohala ʻana i nā mea uila mana o ka hanauna e hiki mai ana.
Loaʻa i ka VET Energy nā lako hana kiʻekiʻe a me kahi ʻōnaehana hoʻokele maikaʻi piha e hōʻoia i kēlā me kēia wafer e hoʻokō i nā kūlana ʻoihana koʻikoʻi. ʻAʻole i loaʻa i kā mākou huahana nā waiwai uila maikaʻi loa, akā loaʻa pū kekahi i ka ikaika mechanical a me ka paʻa wela.
Hāʻawi ʻo VET Energy i nā mea kūʻai aku i nā hoʻonā wafer maʻamau, me nā wafers o nā ʻano nui, nā ʻano a me nā manaʻo doping. Eia kekahi, hāʻawi pū mākou i ke kākoʻo ʻenehana loea a me ka lawelawe ma hope o ke kūʻai aku e kōkua i nā mea kūʻai aku e hoʻoponopono i nā pilikia like ʻole i loaʻa i ka wā o ke kaʻina hana.
OLELO HOOLAHA WAFERING
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Kakaka (GF3YFCD)-Waiwai Loa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | ʻO ka beveling |
PAPA IHO
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
Hoʻopau ʻili | ʻaoʻao ʻelua Optical Polish, Si- Face CMP | ||||
ʻAhaʻulaʻula | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
ʻOpi ʻEke | ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm) | ||||
Indents | ʻAʻole ʻae ʻia | ||||
Nā ʻōpala (Si-Face) | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | ||
māwae | ʻAʻole ʻae ʻia | ||||
Hoʻokuʻu Edge | 3mm |