VET EnergySilicon Carbide Coating Graphite Tray, Plate, da Cover an ƙera shi don sadar da babban matakin aiki, samar da ingantaccen aiki da daidaito akan tsawaita amfani, yana mai da shi zaɓi mai mahimmanci don aikace-aikacen sarrafa wafer a cikin masana'antar semiconductor. Wannan babban aikiSilicon Carbide Rufin Graphite Plateyana alfahari da juriya na musamman na zafi, ingantacciyar yanayin zafi, da ingantaccen kwanciyar hankali na sinadarai, musamman a yanayin zafi mai girma. Babban gininsa mai tsafta, haɗe tare da ci-gaba da juriya na zaizayar ƙasa, ya sa ya zama ba makawa ga mahalli masu buƙata kamar su.MOCVD masu cutarwa.
Mahimman Fasalolin Silicon Carbide Coating Graphite Tray, Plate, da Murfi
1. Juriya na Oxidation Mai Girma:Yana jure yanayin zafi har zuwa 1700 ℃, yana ba shi damar aiwatar da dogaro a cikin matsanancin yanayi.
2. Babban Tsafta da Daidaituwar thermal:Tsabtataccen tsafta mai tsayi har ma da rarraba zafi yana da mahimmanci ga aikace-aikacen MOCVD.
3. Juriya na Musamman na lalata:Juriya ga acid, alkalis, salts, da daban-daban na Organic reagents, yana tabbatar da kwanciyar hankali na dogon lokaci a wurare daban-daban.
4. Babban Tauri da Karamin Sama:Yana da fa'ida mai yawa tare da kyawawan barbashi, inganta ƙarfin gabaɗaya da juriya ga lalacewa.
5. Tsawaita Rayuwar Hidima:Injiniya don tsawon rai, ya fi na al'adaSilicon carbide-mai rufi graphite susceptorsa cikin matsanancin yanayin sarrafa semiconductor.
CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi | |
性质 / Dukiya | 典型数值 / Yawan Daraja |
晶体结构 / Tsarin Crystal | FCC β lokaci多晶,主要为(111) 取向 |
密度 / Yawan yawa | 3.21g/cm³ |
硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
纯度 / Sinadaran Tsabta | 99.99995% |
热容 / Ƙarfin zafi | 640kg-1· K-1 |
升华温度 / Sublimation Zazzabi | 2700 ℃ |
抗弯强度 / Ƙarfin Flexural | 415 MPa RT 4-point |
杨氏模量 / Matasa Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
导热系数 / ThermalGudanarwa | 300 w·m-1· K-1 |
热膨胀系数 / Fadada thermal (CTE) | 4.5×10-6K-1 |
Ƙwararrun Ƙwararrun Makamashi na VET a cikin Keɓaɓɓen Graphite da Silicon Carbide Solutions
A matsayin amintaccen masana'anta, VET Energy ya ƙware a cikin ƙwararrun ƙirar ƙirar graphite da mafita na silicon carbide. Muna ba da kewayon samfuran da aka keɓance don masana'antar semiconductor da masana'antar hoto, gami daSiC-mai rufi sassa graphitekamar trays, faranti, da murfi. Jeri samfurin mu kuma ya haɗa da zaɓuɓɓukan sutura iri-iri, kamarSiC shafi don MOCVD, TaC shafi, gilashin carbon shafi, da kuma murfin carbon pyrolytic, yana tabbatar da cewa muna biyan buƙatun daban-daban na manyan masana'antu.
Ƙwararrun ƙwararrun ƙwararrun ƙwararrunmu, waɗanda suka haɗa da masana daga manyan cibiyoyin bincike na gida, suna ba da cikakkiyar mafita ga abokan ciniki. Muna ci gaba da inganta ayyukanmu na ci gaba, gami da keɓaɓɓen fasaha mai ƙima wanda ke haɓaka haɗin gwiwa tsakanin murfin siliki na siliki da faifan graphite, rage haɗarin ɓarna da ƙara haɓaka rayuwar samfurin.
Aikace-aikace da Fa'idodi a Masana'antar Semiconductor
TheRufin Silicon Carbide don MOCVDyana sa waɗannan masu ɗaukar hoto na graphite tasiri sosai a cikin yanayin zafi mai zafi, ɓarna. Ko an yi amfani da shi azaman masu ɗaukar hoto na graphite ko wasu abubuwan MOCVD, waɗannan masu rufaffiyar siliki-carbide suna nuna tsayin daka da aiki. Ga masu neman amintaccen mafita a cikinSiC mai rufin graphite susceptorkasuwa, VET Energy's silicon carbide-coated graphite tray, faranti, da murfin suna ba da zaɓi mai ƙarfi kuma mai dacewa wanda ya dace da ƙaƙƙarfan buƙatun masana'antar semiconductor.
Ta hanyar mai da hankali kan ilimin kimiyyar abu mai ci gaba, VET Energy ta himmatu wajen isar da babban aikin SiC-mai rufin graphite mafita waɗanda ke haifar da ƙima a cikin sarrafa semiconductor da kuma tabbatar da ingantaccen aiki a duk aikace-aikacen da ke da alaƙa da MOCVD.
VET Energy shine ainihin masana'anta na samfuran graphite na musamman da samfuran silicon carbide tare da sutura daban-daban kamar suturar SiC, murfin TaC, murfin carbon gilashi, murfin carbon pyrolytic, da sauransu, na iya samar da sassa daban-daban na musamman don semiconductor da masana'antar hotovoltaic.
Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aiki don ku.
Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka, kuma mun yi aiki da fasaha ta keɓance mai ƙima, wanda zai iya sanya haɗin kai tsakanin shafi da abin da ke ƙasa ya fi ƙarfin kuma ba shi da haɗari ga ɓarna.
Barka da zuwa ziyarci masana'antar mu, bari mu kara tattaunawa!