Maƙerin China SiC Mai Rufin Graphite MOCVD Epitaxy Susceptor

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Tsafta <5pm
‣ Kyakkyawan doping uniformity
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‣ Ƙwararren Ƙwararru
‣ Short lokacin jagora
‣ Bargarin wadata
‣ Kula da inganci da ci gaba da haɓakawa

Epitaxy na GaN akan Sapphire(RGB / Mini / Micro LED);
Epitoxy na GaN akan Si Substrate(UVC);
Epitoxy na GaN akan Si Substrate(Na'urar Lantarki);
Epitoxy na Si akan Si Substrate(Haɗin kai);
Epitoxy na SiC akan SiC Substrate(Substrate);
Epitaxy na InP akan InP

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MOCVD Susceptor mai inganci Sayi akan layi a China

Wafer yana buƙatar wucewa ta matakai da yawa kafin a shirya don amfani a cikin na'urorin lantarki. Ɗaya mai mahimmanci tsari shine silicon epitaxy, wanda ake ɗaukar wafers a kan graphite susceptors. Kaddarorin da ingancin masu kamuwa da cuta suna da tasiri mai mahimmanci akan ingancin layin epitaxial na wafer.

Don matakan saka fim na bakin ciki irin su epitaxy ko MOCVD, VET tana ba da kayan aikin zane-zane masu tsafta da ake amfani da su don tallafawa kayan maye ko "wafers". A cikin jigon tsari, wannan kayan aiki, masu susceptors na epitaxy ko dandamali na tauraron dan adam na MOCVD, an fara gabatar da su ga yanayin ajiya:

Babban zafin jiki.
Babban injin.
Amfani da abubuwan da ke haifar da gaseous.
Rashin gurɓataccen abu, rashin kwasfa.
Juriya ga acid mai ƙarfi yayin ayyukan tsaftacewa

VET Energy shine ainihin masana'anta na samfuran graphite na musamman da samfuran silicon carbide tare da rufi don masana'antar semiconductor da masana'antar hoto. Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aiki don ku.

Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka, kuma mun yi aiki da fasaha ta keɓance mai ƙima, wanda zai iya sanya haɗin kai tsakanin shafi da abin da ke ƙasa ya fi ƙarfin kuma ba shi da haɗari ga ɓarna.

Siffofin samfuranmu:

1. High zafin jiki hadawan abu da iskar shaka juriya har zuwa 1700 ℃.
2. Babban tsafta da daidaituwar thermal
3. Excellent lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
4. Babban taurin, m surface, lafiya barbashi.
5. Tsawon rayuwar sabis kuma mafi dorewa

CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi
性质 / Dukiya	典型数值 / Yawan Daraja
晶体结构 / Tsarin Crystal	FCC β lokaci多晶，主要为（111) 取向
密度 / Yawan yawa	3.21g/cm³
硬度 / Tauri	2500 维氏硬度 (500g kaya)
晶粒大小 / Hatsi SiZe	2 ~ 10 μm
纯度 / Sinadaran Tsabta	99.99995%
热容 / Ƙarfin zafi	640kg^-1· K^-1
升华温度 / Sublimation Zazzabi	2700 ℃
抗弯强度 / Ƙarfin Flexural	415 MPa RT 4-point
杨氏模量 / Matasa Modul	430 Gpa 4pt lankwasa, 1300 ℃
导热系数 / ThermalGudanarwa	300 w·m^-1· K^-1
热膨胀系数 / Fadada thermal (CTE)	4.5×10^-6K^-1