I-SiC Coated Graphite Halfmoon Part Ye-Silicon Carbide Epitaxial Equipment

Ingxenye ye-SiC Coated Graphite Halfmoon Yesisetshenziswa Se-Silicon Carbide Epitaxial Isithombe Esifakiwe

Incazelo emfushane:

Isingeniso kanye nokusetshenziswa komkhiqizo: Ishubhu ye-quartz exhunyiwe, ingadlula igesi ukushayela ukujikeleza kwesisekelo sethreyi, ukulawula izinga lokushisa

Indawo yedivayisi yomkhiqizo: ekamelweni lokusabela, hhayi ukuthintana ngokuqondile ne-wafer

Imikhiqizo esezingeni eliphansi: amadivayisi kagesi

Imakethe yetheminali enkulu: izimoto zamandla amasha

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC Coated Graphite Halfmoon Partis a ukhiyeingxenye esetshenziswa ezinqubweni zokukhiqiza ze-semiconductor, ikakhulukazi imishini ye-SiC epitaxial.Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza ingxenye yenyanga iyingxenyeubumsulwa obukhulu kakhulu,kuhleenamathelaukufanakanye nempilo yesevisi enhle kakhulu, kanye neukumelana namakhemikhali aphezulu kanye nezakhiwo zokuzinza ezishisayo.

I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingahlinzeka ngezixazululo zezinto ezibonakalayo ezinobuchwepheshekwakho.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Fukudla kwemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700℃.
2. Ukuhlanzeka okuphezulu kanyeukufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1