I-wafer susceptor ene-TaC coating ye-G5 G10

I-VET Energy's i-CVD tantalum carbide (TaC) eyakhiwe ngokuzimela ye-wafer susceptor yakhelwe izimo zokusebenza ezinzima njengokukhiqizwa kwe-semiconductor, ukukhula kwe-LED epitaxial wafer growth (MOCVD), isithando somlilo esikhulayo sekristalu, ukushisa kwe-vacuum eshisa kakhulu, njll. Ngobuchwepheshe bokufaka umhwamuko wamakhemikhali (CVD) kwakhiwa i-carbide surface ye-coograph i-substrate, enikeza ithreyi izinga lokushisa eliphakeme kakhulu (> 3000 ℃), ukumelana nokugqwala kwensimbi encibilikisiwe, ukumelana nokushaqeka okushisayo nezici eziphansi zokungcola, okunweba kakhulu impilo yesevisi.

Izinzuzo zethu zobuchwepheshe:
1. Ukuqina kwezinga lokushisa eliphezulu kakhulu.
I-Melting Point engu-3880°C: I-Tantalum carbide coating ingasebenza ngokuqhubekayo futhi izinzile ngaphezu kuka-2500°C, idlule kude izinga lokushisa lokubola elingu-1200-1400°C lezingubo ezivamile ze-silicon carbide (SiC).
Ukumelana nokushaqeka kwe-thermal: I-coefficient yokwandisa okushisayo kwe-coating ifana ne-graphite substrate (6.6×10 -6 /K), futhi ingamelana nemijikelezo yokushisa esheshayo yokukhuphuka nokuwa ngokuhluka kwezinga lokushisa elingaphezu kuka-1000 ° C ukuze kugwenywe ukuqhekeka noma ukuwa.
Izici zomshini wokushisa okuphezulu: Ukuqina kokumboza kufinyelela ku-2000 HK (ukuqina kwe-Vickers) kanye ne-elastic modulus ngu-537 GPa, futhi isagcina amandla esakhiwo esihle kakhulu emazingeni okushisa aphezulu.

2. Imelana nokugqwala kakhulu ukuze kuqinisekiswe ukuhlanzeka kwenqubo
Ukumelana okuhle kakhulu: Inokumelana okuhle kakhulu namagesi abolayo njenge-H₂, NH₃, SiH₄, HCl nezinsimbi ezincibilikisiwe (isb., Si, Ga), ihlukanisa ngokuphelele i-graphite substrate endaweni esebenzayo futhi igwema ukungcoliswa kwekhabhoni.
Ukufuduka kokungcola okuphansi: ukuhlanzeka okuphezulu kakhulu, kuvimbela ngokuphumelelayo ukufuduka kwe-nitrogen, i-oksijeni nokunye ukungcola ku-crystal noma ungqimba lwe-epitaxial, kunciphisa izinga lokukhubazeka kwama-microtubes ngaphezu kuka-50%.

3. Ukunemba kwezinga le-Nano ukuze kuthuthukiswe ukungaguquguquki kwenqubo
Ukufana kwe-coating: ukubekezelelana kogqinsi≤± 5%, ukuphakama kwendawo kufinyelela ezingeni le-nanometer, ukuqinisekisa ukuhambisana okuphezulu kwemingcele yokukhula kwe-wafer noma i-crystal, iphutha lokufana okushisayo <1%.
Ukunemba kobukhulu: isekela ukubekezelela okungu-±0.05mm, ijwayelana namawafa angu-4-intshi angu-12-intshi, futhi ihlangabezana nezidingo zokusebenzelana kwemishini enembayo ephezulu.

4. Ihlala isikhathi eside futhi ihlala isikhathi eside, inciphisa izindleko zizonke
Amandla okubopha: Amandla okubopha phakathi kokumboza ne-graphite substrate ngu-≥5 MPa, amelana nokuguguleka nokuguga, futhi impilo yesevisi inwetshwa izikhathi ezingaphezu kwezingu-3.

Ukuhambisana Komshini
Ifanele imishini yokukhula ye-epitaxial ne-crystal evamile njenge-CVD, MOCVD, ALD, LPE, njll., ehlanganisa ukukhula kwekristalu ye-SiC (indlela ye-PVT), i-GaN epitaxy, ukulungiswa kwe-AlN substrate nezinye izimo.
Sihlinzeka ngezinhlobonhlobo zomumo we-susceptor njenge-flat, i-concave, i-convex, njll. Ugqinsi (5-50mm) kanye nesakhiwo sembobo yokuma kungalungiswa ngokuya ngesakhiwo somgodi ukuze kuzuzwe Ukuhambisana okungenamthungo nemishini.

Izinhlelo zokusebenza eziyinhloko:
Ukukhula kwekristalu ye-SiC: Ngendlela ye-PVT, ukumbozwa kungathuthukisa ukusatshalaliswa kwensimu eshisayo, kunciphise amaphutha asemaphethelweni, futhi kwandise indawo ephumelelayo yokukhula kwekristalu ibe ngaphezu kwama-95%.
I-GaN epitaxy: Kunqubo ye-MOCVD, iphutha le-susceptor thermal uniformity ingu-<1%, futhi ukuhambisana kogqinsi lwe-epitaxial kufinyelela ku-±2%.
Ukulungiswa kwe-AlN substrate: Emazingeni okushisa aphezulu (>2000°C) amination reaction, i-TaC enamathelayo ingahlukanisa ngokuphelele i-graphite substrate, igweme ukungcoliswa kwekhabhoni, futhi ithuthukise ukuhlanzeka kwekristalu ye-AlN.