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Kungani ama-sidewalls egoba ngesikhathi sokufakwa okomile?
Ukungafani kwe-ion bombardment Ukomisa okomile ngokuvamile kuyinqubo ehlanganisa imiphumela yomzimba kanye namakhemikhali, lapho ukuqhuma kwe-ion kuyindlela ebalulekile yokuhlanganisa ngokomzimba. Phakathi nenqubo yokuqopha, i-engeli yesigameko kanye nokusatshalaliswa kwamandla kwama-ion kungase kungalingani. Uma i-ion iqala ...Funda kabanzi -
Isingeniso sobuchwepheshe obuthathu obujwayelekile be-CVD
I-Chemical vapor deposition (CVD) ubuchwepheshe obusetshenziswa kakhulu embonini ye-semiconductor yokufaka izinto ezahlukahlukene, kufaka phakathi izinhlobonhlobo zezinto ezivikelayo, izinto eziningi zensimbi nezinto ezixutshwe nensimbi. I-CVD ubuchwepheshe bendabuko bokulungiselela ifilimu elincanyana. Inkosi yayo...Funda kabanzi -
Ingabe idayimane lingakwazi ukufaka esikhundleni samanye amadivaysi e-semiconductor enamandla amakhulu?
Njengetshe legumbi lemishini yesimanje kagesi, izinto zokwakha ze-semiconductor zenza izinguquko ezingakaze zibonwe ngaphambili. Namuhla, idayimane kancane kancane likhombisa amandla alo amakhulu njengempahla ye-semiconductor yesizukulwane sesine enezindawo zayo ezinhle kakhulu zikagesi nezishisayo kanye nokuzinza ngaphansi kwe ...Funda kabanzi -
Iyini indlela yokuhlela ye-CMP?
I-Dual-Damascene iwubuchwepheshe benqubo esetshenziselwa ukwakha izixhumi zensimbi kumasekethe ahlanganisiwe. Kuyintuthuko eyengeziwe yenqubo yaseDamaseku. Ngokwenza izimbobo nemigodi ngesikhathi esifanayo esinyathelweni senqubo efanayo futhi uzigcwalise ngensimbi, ukukhiqizwa okuhlanganisiwe kwe-m...Funda kabanzi -
I-graphite ene-TaC coating
I. Ukuhlola ipharamitha yenqubo 1. Uhlelo lwe-TaCl5-C3H6-H2-Ar 2. Izinga lokushisa lokubeka: Ngokwefomula ye-thermodynamic, kubalwa ukuthi uma izinga lokushisa lingaphezu kuka-1273K, amandla amahhala e-Gibbs okusabela aphansi kakhulu futhi ukusabela kuphelele. Isizathu...Funda kabanzi -
Inqubo yokukhula kwekristalu ye-silicon carbide kanye nobuchwepheshe bemishini
1. Umzila we-SiC crystal ukukhula kobuchwepheshe be-PVT (indlela ye-sublimation), i-HTCVD (izinga lokushisa eliphezulu i-CVD), i-LPE (indlela yesigaba samanzi) izindlela ezintathu ezivamile zokukhula kwe-SiC crystal; Indlela eyaziwa kakhulu embonini yindlela ye-PVT, futhi ngaphezu kwe-95% yamakristalu e-SiC eyodwa akhuliswa yi-PVT ...Funda kabanzi -
Ukulungiselela kanye Nokuthuthukiswa Kokusebenza Kwezinsimbi Eziyingxube Yekhabhoni Ye-Silicon Enembobo
Amabhethri e-lithium-ion athuthuka kakhulu ekuqondeni kwamandla aphezulu. Ezingeni lokushisa lasekamelweni, i-silicon-based negative electrode materials alloy ene-lithium ukukhiqiza umkhiqizo ocebile we-lithium Li3.75Si isigaba, esinamandla athile afinyelela ku-3572 mAh/g, aphakeme kakhulu kunethiyori...Funda kabanzi -
I-Thermal Oxidation ye-Single Crystal Silicon
Ukwakheka kwe-silicon dioxide ebusweni be-silicon kubizwa ngokuthi i-oxidation, futhi ukwakhiwa kwe-silicon dioxide ezinzile futhi enamathela ngokuqinile kwaholela ekuzalweni kobuchwepheshe be-silicon edidiyelwe bokuhlanganisa wesifunda. Nakuba kunezindlela eziningi zokukhulisa i-silicon dioxide ngqo phezu kwe-silico...Funda kabanzi -
Ukucutshungulwa kwe-UV ye-Fan-Out Wafer-Level Packaging
I-Fan out wafer level packaging (FOWLP) iyindlela engabizi kakhulu embonini ye-semiconductor. Kodwa imiphumela emibi evamile yale nqubo i-warping kanye ne-chip offset. Ngaphandle kokuthuthuka okuqhubekayo kweleveli ye-wafer kanye nobuchwepheshe bezinga lephaneli le-fan out, lezi zinkinga ezihlobene nokubunjwa zisasebenza...Funda kabanzi