I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo ze-sintering. Icutshungulwa kusetyenziswa iindlela zokubumba eziqhelekileyo kwezinye iiseramics kwaye i-sintered kwi-2,000 ukuya kwi-2,200 ° C kwi-atmosphere ye-inert yegesi.Kwakunye neenguqulelo ezicokisekileyo, ezinobukhulu obuziinkozo <5 um, iinguqulelo ze-coarse-grained kunye nobukhulu beenkozo ukuya kwi-1.5. mm ziyafumaneka.
I-SSIC yohlulwa ngamandla aphezulu ahlala phantse ngokuthe rhoqo ukuya kumaqondo obushushu aphezulu kakhulu (malunga ne-1,600° C), egcina loo mandla ixesha elide!
Iinzuzo zemveliso:
Ukumelana ne-oxidation yobushushu obuphezulu
Uxhathiso olugqwesileyo lweCorrosion
Ukuxhathisa okulungileyo kweAbrasion
I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.
Iimpawu zobugcisa:
Izinto | Iyunithi | Idatha |
Ukuqina | HS | ≥110 |
Inqanaba le-Porosity | % | <0.3 |
Ukuxinana | g/cm3 | 3.10-3.15 |
Ukucinezela | MPa | >2200 |
Ukomelela Kweqhekeza | MPa | >350 |
I-Coefficient yokwandiswa | 10/°C | 4.0 |
Umxholo weSic | % | ≥99 |
I-Thermal conductivity | W/mk | >120 |
Imodyuli ye-elastic | GPA | ≥400 |
Ubushushu | °C | 1380 |